Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition
    61.
    发明授权
    Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition 有权
    辐射敏感组合物和使用该辐射敏感组合物制造器件的方法

    公开(公告)号:US07901864B2

    公开(公告)日:2011-03-08

    申请号:US10948826

    申请日:2004-09-23

    IPC分类号: G03C1/00 H01L21/00 G03F1/00

    摘要: A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.

    摘要翻译: 辐射敏感性组合物(以及使用该组合物制造器件的方法)包括非聚合倍半硅氧烷,其包含至少一种酸不稳定部分,包含至少一种选自碱性水溶性部分和酸不稳定性的成员的聚合物 部分和辐射敏感性酸产生剂。 另一种辐射敏感组合物(以及使用该组合物制造器件的方法)包括非聚合物倍半硅氧烷,其包括至少一种水溶性基团可溶部分,包含水溶性基团可溶部分的聚合物,交联剂和辐射敏感性酸发生剂。

    Near-Infrared Absorbing Film Compositions
    62.
    发明申请
    Near-Infrared Absorbing Film Compositions 有权
    近红外吸收膜组合物

    公开(公告)号:US20110042771A1

    公开(公告)日:2011-02-24

    申请号:US12542970

    申请日:2009-08-18

    摘要: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

    摘要翻译: 一种可固化液体制剂,其包含:(i)一种或多种近红外吸收聚甲炔染料; (ii)一种或多种可交联聚合物; 和(iii)一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底,以及在近红外吸收膜位于微电子衬底之间的情况下,用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

    Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
    64.
    发明授权
    Photoresist compositions and process for multiple exposures with multiple layer photoresist systems 失效
    光刻胶组合物和多层光刻胶系统的多次曝光工艺

    公开(公告)号:US07803521B2

    公开(公告)日:2010-09-28

    申请号:US11942062

    申请日:2007-11-19

    IPC分类号: G03F7/30

    摘要: A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.

    摘要翻译: 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层,图案地暴露第一光致抗蚀剂层,在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层,以图形方式暴露第一光致抗蚀剂层,在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS
    65.
    发明申请
    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS 失效
    可开发的底部抗反射涂料组合物特别适用于离子植入应用

    公开(公告)号:US20100196825A1

    公开(公告)日:2010-08-05

    申请号:US12363913

    申请日:2009-02-02

    IPC分类号: G03F7/004 G03F7/20

    摘要: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.

    摘要翻译: 已经发现特征在于具有芳族部分和脂族醇部分的水溶性基础可溶性聚合物的存在的组合物,其特别用作193nm平版印刷方法中的可显影底部抗反射涂层。 该组合物能够改进光刻过程,其在随后的离子注入或其它类似方法的背景下是特别有用的,其中需要避免侵蚀性抗反射涂层去除技术。

    FORMING SUB-LITHOGRAPHIC PATTERNS USING DOUBLE EXPOSURE
    67.
    发明申请
    FORMING SUB-LITHOGRAPHIC PATTERNS USING DOUBLE EXPOSURE 失效
    使用双重曝光形成亚光刻图案

    公开(公告)号:US20100009298A1

    公开(公告)日:2010-01-14

    申请号:US12170722

    申请日:2008-07-10

    IPC分类号: G03F7/20

    CPC分类号: G03F7/2024

    摘要: Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.

    摘要翻译: 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中,在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界; 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中,留下所述边界,其中所述边界具有亚光刻尺寸。

    CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL
    68.
    发明申请
    CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
    通过调谐过滤材料的化学品线的化学研究

    公开(公告)号:US20090311490A1

    公开(公告)日:2009-12-17

    申请号:US12137743

    申请日:2008-06-12

    IPC分类号: B32B3/00 G03F7/20

    CPC分类号: G03F7/40 Y10T428/24802

    摘要: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译: 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影,以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS
    69.
    发明申请
    FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
    用于光刻应用的熔融芳构结构和方法

    公开(公告)号:US20090286180A1

    公开(公告)日:2009-11-19

    申请号:US12508652

    申请日:2009-07-24

    IPC分类号: G03F7/20 G03F7/004

    摘要: A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.

    摘要翻译: 抗蚀剂组合物和在基材上形成图案化特征的方法。 该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。 该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物,在该基质上形成该组合物的膜,图案成像 所述膜,其中所述膜的至少一个区域暴露于辐射或颗粒束,导致在所述暴露区域中产生酸催化剂,烘烤所述膜,显影所述膜,导致去除可溶于碱的暴露区域 ,其中来自膜的图案化特征在去除之后保持不变。

    Fused aromatic structures and methods for photolithographic applications
    70.
    发明授权
    Fused aromatic structures and methods for photolithographic applications 失效
    熔融芳族结构和光刻应用的方法

    公开(公告)号:US07566527B2

    公开(公告)日:2009-07-28

    申请号:US11769089

    申请日:2007-06-27

    摘要: A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.

    摘要翻译: 抗蚀剂组合物和在基材上形成图案化特征的方法。 该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。 该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物,在该基质上形成该组合物的膜,图案成像 所述膜,其中所述膜的至少一个区域暴露于辐射或颗粒束,导致在所述暴露区域中产生酸催化剂,烘烤所述膜,显影所述膜,导致去除可溶于碱的暴露区域 ,其中来自膜的图案化特征在去除之后保持不变。