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    METHOD OF MANUFACTURING A MAGNETORESISTIVE-BASED DEVICE
    61.
    发明申请
    METHOD OF MANUFACTURING A MAGNETORESISTIVE-BASED DEVICE 有权
    制造基于磁阻的器件的方法

    公开(公告)号：US20140315329A1

    公开(公告)日：2014-10-23

    申请号：US14264520

    申请日：2014-04-29

    Applicant: Everspin Technologies, Inc.

    Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  G11B5/84 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    Abstract: A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.

    Abstract translation: 一种制造具有在第一导电层和第二导电层之间形成的磁性材料层的基于磁阻的器件的方法，所述磁性材料层包括在第一磁性材料层和第二磁性材料层之间形成的隧道势垒层， 包括去除未被第一硬掩模保护的第一导电层和第一磁性材料层，分别形成第一电极和第一磁性材料; 以及去除不受第二硬掩模保护的隧道势垒层，第二磁性材料层和第二导电层，以形成隧道势垒，第二磁性材料和第二电极。

    Magnetoresistive devices and methods of fabricating magnetoresistive devices
    64.
    发明授权
    Magnetoresistive devices and methods of fabricating magnetoresistive devices 有权

    公开(公告)号：US11502247B2

    公开(公告)日：2022-11-15

    申请号：US17134683

    申请日：2020-12-28

    Applicant: Everspin Technologies, Inc.

    Inventor： Sanjeev Aggarwal ,  Shimon ,  Kerry Joseph Nagel

    IPC: H01L43/14 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06

    Abstract: A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.

    Methods of forming magnetoresistive devices and integrated circuits
    65.
    发明授权
    Methods of forming magnetoresistive devices and integrated circuits 有权

    公开(公告)号：US11335728B2

    公开(公告)日：2022-05-17

    申请号：US16881958

    申请日：2020-05-22

    Applicant: Everspin Technologies, Inc.

    Inventor： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Thomas Andre ,  Sarin A. Deshpande

    IPC: H01L29/82 ,  H01L43/00 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

    Abstract: Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

    Magnetoresistive stack/structure and method of manufacturing same
    67.
    发明授权
    Magnetoresistive stack/structure and method of manufacturing same 有权

    公开(公告)号：US11189785B2

    公开(公告)日：2021-11-30

    申请号：US16845405

    申请日：2020-04-10

    Applicant: Everspin Technologies, Inc.

    Inventor： Sarin A. Deshpande ,  Kerry Joseph Nagel ,  Chaitanya Mudivarthi ,  Sanjeev Aggarwal

    IPC: H01L43/12 ,  H01L43/08

    Abstract: A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer. (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.

    Method of fabricating a magnetoresistive bit from a magnetoresistive stack
    69.
    发明授权
    Method of fabricating a magnetoresistive bit from a magnetoresistive stack 有权

    公开(公告)号：US10886463B2

    公开(公告)日：2021-01-05

    申请号：US16881151

    申请日：2020-05-22

    Applicant: Everspin Technologies, Inc.

    Inventor： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Sarin A. Deshpande

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.

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