公开(公告)号：US20060086949A1

公开(公告)日：2006-04-27

申请号：US11299895

申请日：2005-12-13

申请人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

发明人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

IPC分类号： H01L29/74

CPC分类号： H01L21/76259 ,  H01L21/76251 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a substrate having a surface and being made of a material that provides atypical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides atypical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The atypical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.

摘要翻译： 半导体结构包括具有表面并由表面提供非典型表面性质的材料制成的基板，在基板的表面上的结合层，以及与粘合层分子结合的另一层。 一种制造这种半导体结构的方法包括提供具有表面的基板，并且由表面提供非典型表面特性的材料制成，在基板的表面上提供粘合层，使结合层平滑以提供表面， 能够分子结合，并且将另一层分子结合到结合层以形成结构。 非典型表面性质优选包括难以抛光的粗糙度大于0.5nm rms或至少0.4nm rms的粗糙度或与分子键不相容的化学组成中的至少一种。

公开(公告)号：US06913971B2

公开(公告)日：2005-07-05

申请号：US10616586

申请日：2003-07-09

申请人： Bernard Aspar ,  Séverine Bressot ,  Olivier Rayssac

发明人： Bernard Aspar ,  Séverine Bressot ,  Olivier Rayssac

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12 ,  H01L21/8242 ,  H01L21/336

CPC分类号： H01L21/76259 ,  H01L21/76254

摘要： Methods for transferring a layer of material from a source substrate having a zone of weakness onto a support substrate to fabricate a composite substrate are described. An implementation includes forming at least one recess in at least one of the source and support substrates, depositing material onto at least one of a front face of the source substrate and a front face of the support substrate, pressing the front faces of the source and support substrates together to bond the substrates, and detaching a transfer layer from the source substrate along the zone of weakness. When the front faces are pressed together, any excess material is received by the recess. The recess may advantageously include an opening in the front face of at least one of the source substrate and the support substrate.

摘要翻译： 描述了将材料层从具有弱区的源衬底转移到支撑衬底上以制造复合衬底的方法。 一种实施方式包括在源极和支撑衬底中的至少一个中形成至少一个凹槽，将材料沉积在源极衬底的前表面和支撑衬底的前表面中的至少一个上，将源的前表面按压;以及 将衬底支撑在一起以结合衬底，以及沿着弱化区域从源衬底分离转移层。 当前面被压在一起时，任何多余的材料都被凹槽所接收。 该凹部可以有利地包括在源极基板和支撑基板中的至少一个的正面中的开口。

公开(公告)号：US06204079B1

公开(公告)日：2001-03-20

申请号：US09352783

申请日：1999-07-14

申请人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Olivier Rayssac

IPC分类号： H01L2100

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01087 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2224/83 ,  H01L2924/00

摘要： A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.

摘要翻译： 一种用于将元件从转移支撑件选择性地传送到接收支撑件的过程，所述元件根据限定的结合能将第一面粘接到转印支撑件，每个元件具有被配置为与接收支撑件接触的第二面。 通过在它们之间施加超过其第一面和转印支撑体之间的结合能的接收支撑体之间的结合能量来转移待转移的元件。 不转移到转印支架上的元素被保留。

公开(公告)号：US07713369B2

公开(公告)日：2010-05-11

申请号：US10468223

申请日：2002-04-11

申请人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

发明人： Bernard Aspar ,  Hubert Moriceau ,  Marc Zussy ,  Olivier Rayssac

IPC分类号： B32B38/10

CPC分类号： H01L21/7813 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/19041 ,  Y10T156/11

摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.

摘要翻译： 本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少 具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。 所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

公开(公告)号：US07439160B2

公开(公告)日：2008-10-21

申请号：US11617025

申请日：2006-12-28

申请人： Yves Matthieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

发明人： Yves Matthieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L23/544 ,  H01L29/06 ,  H01L21/768 ,  H01L21/78

CPC分类号： H01L21/76254 ,  H01L2221/68318

摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

摘要翻译： 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。

公开(公告)号：US07235461B2

公开(公告)日：2007-06-26

申请号：US10832267

申请日：2004-04-27

申请人： Christophe Maleville ,  Corinne Maunand Tussot ,  Olivier Rayssac ,  Sébastien Kerdiles ,  Benjamin Scarfogliere ,  Hubert Moriceau ,  Christophe Morales

发明人： Christophe Maleville ,  Corinne Maunand Tussot ,  Olivier Rayssac ,  Sébastien Kerdiles ,  Benjamin Scarfogliere ,  Hubert Moriceau ,  Christophe Morales

IPC分类号： H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/2007 ,  H01L21/76251 ,  H01L21/76254

摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.

摘要翻译： 描述将半导体结构结合在一起的方法。 该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及 通过分子键合将接合表面结合在一起以形成复合结构。

公开(公告)号：US20070122926A1

公开(公告)日：2007-05-31

申请号：US11668799

申请日：2007-01-30

申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cecile Berne ,  Olivier Rayssac

发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cecile Berne ,  Olivier Rayssac

IPC分类号： H01L21/00 ,  B29C63/00

CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 该装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的位置保持在可移动支撑件上。 提供具有至少一个叶片的切割机构用于接触基底并在其中引入切割波。 所述切割机构与所述定位构件可操作地相关联，使得所述至少一个叶片接触所述环形切口，所述定位构件防止所述基板移动，并且所述可移动支撑件移动离开所述基板，以允许所述切割波将所述基板 在切口处形成第一和第二部分，并且沿着弱化区域从基板分离层。

公开(公告)号：US06989314B2

公开(公告)日：2006-01-24

申请号：US10777721

申请日：2004-02-11

申请人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

发明人： Olivier Rayssac ,  Muriel Martinez ,  Sephorah Bisson ,  Lionel Portigliatti

IPC分类号： H01L21/76 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/76251 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a substrate having a surface and being made of a material that provides a typical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides a typical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The a typical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.

摘要翻译： 半导体结构包括具有表面并由表面提供典型表面特性的材料制成的基板，在基板的表面上的接合层，以及分层结合到接合层的另一层。 一种制造这种半导体结构的方法，包括提供具有表面并由表面提供典型表面性质的材料制成的衬底，在衬底的表面上提供粘合层，使结合层平滑以提供表面 其能够分子结合，并且将另外的层分子结合到结合层以形成结构。 典型的表面性质优选包括难以抛光的粗糙度大于0.5nm rms或至少0.4nm rms的粗糙度或与分子键合不相容的化学组成中的至少一种。

公开(公告)号：US20050245049A1

公开(公告)日：2005-11-03

申请号：US11179713

申请日：2005-07-11

申请人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

发明人： Takeshi Akatsu ,  Nicolas Daval ,  Nguyet-Phuong Nguyen ,  Olivier Rayssac ,  Konstantin Bourdelle

IPC分类号： H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.

摘要翻译： 描述形成半导体结构的方法。 在一个实施例中，该技术包括提供在第一层上具有第一半导体层和第二半导体层并具有自由表面的施主晶片; 通过第二层的自由表面共同植入两种不同的原子物质，以形成第一层中的弱区; 将第二层的自由表面粘合到主晶片; 并且在弱化区域提供能量以分散包含主晶片，第二层和第一层的一部分的半导体结构。 有利地，施主晶片包括SiGe层，并且根据适于使第一种类形成SiGe层中的弱点区域的植入参数来进行原子物质的共同注入，并且使得第二物质能够提供 浓度峰位于供体晶片中的弱点之下，从而使得在弱化区分离导致的表面粗糙度最小化。

公开(公告)号：US07176554B2

公开(公告)日：2007-02-13

申请号：US10863193

申请日：2004-06-07

申请人： Yves Matthieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

发明人： Yves Matthieu Le Vaillant ,  Olivier Rayssac ,  Christophe Fernandez

IPC分类号： H01L23/544 ,  H01L29/06 ,  H01L21/768 ,  H01L21/78 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L2221/68318 ,  Y10S438/977

摘要： A method for producing a semiconductor entity is described. The method includes providing a donor substrate having a zone of weakness at a predetermined depth to define a thin layer, and the donor substrate includes a bonding interface. A receiver substrate is also provided that includes at least one motif on its surface. The technique further includes bonding the donor substrate at the bonding interface to the at least one motif on the receiver substrate, and supplying sufficient energy to detach a portion of the thin layer from the donor substrate located at the at least one motif and to rupture bonds within the thin layer. The energy thus supplied is insufficient to rupture the bond at the bonding interface. Also described is fabrication of a wafer and the use of the method to produce chips suitable for use in electronics, optics, or optoelectronics applications.

摘要翻译： 对半导体实体的制造方法进行说明。 该方法包括提供具有预定深度的弱区的施主衬底以限定薄层，并且施主衬底包括结合界面。 还提供了在其表面上包括至少一个图案的接收器衬底。 该技术还包括将接合界面处的施主衬底粘合到接收器基底上的至少一个基序上，并且提供足够的能量以将薄层的一部分从位于至少一个基序上的施主衬底分离出来，并断裂键 在薄层内。 这样提供的能量不足以破坏接合界面处的结合。 还描述了晶片的制造和使用该方法来生产适用于电子，光学或光电子应用的芯片。