摘要:
Polyhydroxyamides are polymerized to form highly-crosslinked, temperature-stable polymers. The polyhydroxyamides include as their central, parent structure a benzenetricarboxylic acid to which side chains containing a terminal reactive group are attached by an amide bond. By way of this reactive group, highly crosslinked polymers can be formed. In addition, the polyhydroxyamide can be added as an additive to polymers in order to bring about three-dimensional crosslinking.
摘要:
The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.
摘要:
A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment and is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading data memory.
摘要:
The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1—[—Ar—]n—R2 (I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10-C20 alkylene group, R2 is for example a C1-C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.
摘要:
The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
摘要:
The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1ArnR2 (I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10–C20 alkylene group, R2 is for example a C1–C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.
摘要:
Dioxaborines as organic n-semiconductors, a process for the production of semiconductors utilizing dioxaborines, and a semiconductor component, a field effect transistor, and a diode having a dioxaborine are provided. Dioxaborines have a conjugated π-system that carries two terminal six-membered dioxaborine heterocycles that are electronically linked to one another via the central π-system. The compounds have good electron mobility and very good reversibility of redox behavior and are therefore suitable as organic semiconductors in electronic semiconductor components. Processes for manufacturing the electronic semiconductor components utilize the dioxabroines.