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    Dioxaborines as organic n-semiconductors, process for the production of semiconductors utilizing dioxaborines, and semiconductor component, field effect transistor, and diode having a dioxaborine
    1.
    发明申请
    Dioxaborines as organic n-semiconductors, process for the production of semiconductors utilizing dioxaborines, and semiconductor component, field effect transistor, and diode having a dioxaborine 审中-公开
    作为有机半导体的二氧杂硼烷，利用二氧杂环己烷的半导体的制造方法以及半导体元件，场效应晶体管和具有二氧杂硼杂环的二极管

    公开(公告)号：US20070179299A1

    公开(公告)日：2007-08-02

    申请号：US10993117

    申请日：2004-11-19

    申请人： Marcus Halik ,  Gunter Schmid ,  Lisa Davis

    发明人： Marcus Halik ,  Gunter Schmid ,  Lisa Davis

    IPC分类号： C07D231/00

    CPC分类号： C07F5/022 ,  C07F5/04

    摘要： Dioxaborines as organic n-semiconductors, a process for the production of semiconductors utilizing dioxaborines, and a semiconductor component, a field effect transistor, and a diode having a dioxaborine are provided. Dioxaborines have a conjugated π-system that carries two terminal six-membered dioxaborine heterocycles that are electronically linked to one another via the central π-system. The compounds have good electron mobility and very good reversibility of redox behavior and are therefore suitable as organic semiconductors in electronic semiconductor components. Processes for manufacturing the electronic semiconductor components utilize the dioxabroines.

    摘要翻译： 作为有机半导体的二氧杂硼烷，使用二氧杂硼烷的半导体的制造方法，以及半导体元件，场效应晶体管和具有二氧杂硼烷的二极管。 二氧杂硼杂环丁烷具有携带两个末端六元二氧杂环丁烷杂环的共轭π系统，其通过中心π系统彼此电连接。 该化合物具有良好的电子迁移率和非常好的氧化还原行为的可逆性，因此适用于电子半导体组件中的有机半导体。 用于制造电子半导体组件的方法利用二氧杂二恶烷。

    Device for the Storage of Solid and/or Liquid and/or Gaseous Objects
    2.
    发明申请
    Device for the Storage of Solid and/or Liquid and/or Gaseous Objects 失效
    用于存储固体和/或液体和/或气态物体的装置

    公开(公告)号：US20070267431A1

    公开(公告)日：2007-11-22

    申请号：US10566144

    申请日：2004-07-26

    申请人： Martin Bergsmann ,  Aldolf Bernds ,  Wolfgang Clemens ,  Axel Gerlt ,  Marcus Halik ,  Matthias Muller ,  Henning Rost ,  Gunter Schmid ,  Roland Treutlein

    发明人： Martin Bergsmann ,  Aldolf Bernds ,  Wolfgang Clemens ,  Axel Gerlt ,  Marcus Halik ,  Matthias Muller ,  Henning Rost ,  Gunter Schmid ,  Roland Treutlein

    IPC分类号： B65D75/36

    CPC分类号： A61J7/0481 ,  A61J1/035 ,  A61J7/0436

    摘要： A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment and is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading data memory.

    摘要翻译： 用于存储固体，液体或气体物体中的至少一种的装置。 所述设备包括被配置为包含至少一个对象的至少一个隔间。 隔间的灌装​​或排空触发电可读信号。 在一个实施例中，隔室可以被机械地修改，并且基于对隔室的对应的机械改变产生电可读信号。 具有至少一个存储单元的电数据存储器集成到该设备中。 存储单元被分配给隔室，并被配置为采用对应于隔室的机械变化的值。 该装置还包括用于读取数据存储器的分析电路。

    Semiconductor memory device and method for fabricating a semiconductor memory device
    3.
    发明申请
    Semiconductor memory device and method for fabricating a semiconductor memory device 审中-公开
    半导体存储器件及半导体存储器件的制造方法

    公开(公告)号：US20060249769A1

    公开(公告)日：2006-11-09

    申请号：US11361648

    申请日：2006-02-24

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid

    IPC分类号： H01L29/94

    CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/11502 ,  H01L28/55

    摘要： A semiconductor memory device and method for fabricating a semiconductor memory device is disclosed. In one embodiment, the semiconductor memory device using at least one ferroelectric layer which has at least one electrically non-conductive polymer and ferroelectric nanoparticles distributed in the polymer. In another embodiment, the present invention provides a method for fabricating a semiconductor memory device using at least one ferroelectric layer. It is thus possible to fabricate a semiconductor memory device using at least one ferroelectric layer on inexpensive and, if appropriate, flexible substrates.

    摘要翻译： 公开了一种用于制造半导体存储器件的半导体存储器件和方法。 在一个实施例中，使用至少一个铁电层的半导体存储器件，该铁电层具有分布在聚合物中的至少一种非导电聚合物和铁电纳米粒子。 在另一个实施例中，本发明提供一种制造使用至少一个铁电层的半导体存储器件的方法。 因此，可以在廉价且适当的柔性基板上使用至少一个铁电层来制造半导体存储器件。

    Method for producing a mask arrangement and use of the mask arrangement
    6.
    发明申请
    Method for producing a mask arrangement and use of the mask arrangement 审中-公开
    用于制造掩模装置的方法和所述掩模装置的使用

    公开(公告)号：US20060183029A1

    公开(公告)日：2006-08-17

    申请号：US11346572

    申请日：2006-02-03

    申请人： Hagen Klauk ,  Florian Eder ,  Marcus Halik ,  Dirk Rohde ,  Gunter Schmid

    发明人： Hagen Klauk ,  Florian Eder ,  Marcus Halik ,  Dirk Rohde ,  Gunter Schmid

    IPC分类号： G03C5/00 ,  G03F1/00

    CPC分类号： H01L51/0011 ,  H01L27/283 ,  H01L51/0003 ,  H01L51/0512

    摘要： A method is provided for producing a mask arrangement that is used for additive forming of organic semiconductor material regions on a substrate. The mask arrangement is formed by applying a photocrosslinkable polymer material to a mask carrier region, exposing it in a controlled and selective and thereby patterned manner and subsequently developing it. The developing process facilitates the removal of polymer material regions that are not exposed, and have not been photocrosslinked, from surface regions of the mask carrier region such that the desired mask arrangement is produced.

    摘要翻译： 提供了一种制造用于在基板上添加形成有机半导体材料区域的掩模布置的方法。 通过将光可交联聚合物材料施加到掩模载体区域，以受控和选择性的方式将其曝光以形成掩模布置并随后显影。 显影方法有助于从掩模载体区域的表面区域除去未被曝光并且未被光致交联的聚合物材料区域，使得产生所需的掩模装置。

    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    8.
    发明申请
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US20050260803A1

    公开(公告)日：2005-11-24

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

    IPC分类号： H01L21/283 ,  H01L21/336 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。