摘要:
The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1—[—Ar—]n—R2 (I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10-C20 alkylene group, R2 is for example a C1-C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.
摘要:
The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1ArnR2 (I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10–C20 alkylene group, R2 is for example a C1–C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.
摘要:
Monolayers of organic compounds are formed on transparent conductive metal oxide surfaces these are used for example in producing organically based electronic components. By selecting the monolayer, the service life of the devices produced therewith may be improved by orders of magnitude.
摘要:
A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.
摘要:
Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.
摘要:
A process for synthesizing long-chain phosphonic acid derivatives and thiol derivative is disclosed. One embodiment provides organic compounds which can form a self-assembled monolayer and are obtained by reaction of an olefin with a thiocarboxylic acid and subsequent hydrogenation to give the thiol, or with a phosphite and subsequent hydrolysis to give the phosphonic acid.
摘要:
A method for fabricating an organic conductor path on a substrate includes providing a printing stamp with a hydrophobic patterned printing side that is loaded with a printing medium containing an organic conductive polymer and, by bringing it into contact with a hydrophilic substrate, a patterned layer including the organic polymer are formed on the substrate. The method can be operated continuously through selection of suitable geometries for the printing stamp and the substrate.
摘要:
The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.
摘要:
A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment and is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading data memory.
摘要:
A semiconductor memory device and method for fabricating a semiconductor memory device is disclosed. In one embodiment, the semiconductor memory device using at least one ferroelectric layer which has at least one electrically non-conductive polymer and ferroelectric nanoparticles distributed in the polymer. In another embodiment, the present invention provides a method for fabricating a semiconductor memory device using at least one ferroelectric layer. It is thus possible to fabricate a semiconductor memory device using at least one ferroelectric layer on inexpensive and, if appropriate, flexible substrates.