公开(公告)号：US11067751B2

公开(公告)日：2021-07-20

申请号：US16597323

申请日：2019-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Colleen Meagher ,  Karen Nummy ,  Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/12

Abstract: Structures including a waveguide core and methods of fabricating a structure that includes a waveguide core. A dielectric layer including a trench with a first sidewall and a second sidewall, and a waveguide core positioned inside the trench between the first and second sidewalls of the trench. The waveguide core has a first width, and the trench has a second width between the first and second sidewalls that is greater than the first width.

公开(公告)号：US11067749B2

公开(公告)日：2021-07-20

申请号：US16690835

申请日：2019-11-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/138 ,  G02B6/122 ,  G02B6/136

Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A first layer and a second layer are positioned in a layer stack on a surface of a waveguide core. The first layer is positioned in the layer stack between the second layer and the surface of the waveguide core. The waveguide core is composed of a first material having a first refractive index, the first layer is composed of a second material having a second refractive index that is less than the first refractive index of the first material, and the second layer is composed of a third material having a third refractive index that is less than the second refractive index of the second material.

公开(公告)号：US11056535B2

公开(公告)日：2021-07-06

申请号：US16425360

申请日：2019-05-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Amogh Agrawal

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01F10/32 ,  H01L45/00 ,  H01L43/02 ,  G11C13/00 ,  H01L27/24 ,  H01L23/528 ,  H01F41/32

Abstract: Structures for a bitcell of a non-volatile memory and methods of fabricating and using such structures. Non-volatile memory elements are arranged in a Wheatstone bridge arrangement having a first terminal and a second terminal. A first field-effect transistor is coupled with the first terminal of the Wheatstone bridge arrangement, and a second field-effect transistor is coupled with the second terminal of the Wheatstone bridge arrangement.

公开(公告)号：US20210194201A1

公开(公告)日：2021-06-24

申请号：US16718329

申请日：2019-12-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01S3/02 ,  H01S3/16

Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

公开(公告)号：US10989873B1

公开(公告)日：2021-04-27

申请号：US16663696

申请日：2019-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Sujith Chandran ,  Marcus Dahlem

IPC: G02B6/12 ,  G02B6/125 ,  G02B6/122

Abstract: Structures for a waveguide crossing and methods of fabricating a structure for a waveguide crossing. A waveguide crossing includes a central section and an arm positioned between a waveguide core and the central section. The arm and the waveguide core are aligned along a longitudinal axis. The arm is coupled to the waveguide core at a first interface, and the arm is coupled to a portion of the central section at a second interface. The arm has a first width at the first interface, a second width at the second interface, and a third width between the first interface and the second interface. The third width is greater than either the first width or the second width.

公开(公告)号：US10964367B1

公开(公告)日：2021-03-30

申请号：US16778548

申请日：2020-01-31

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Akhilesh Jaiswal ,  Ajey Poovannummoottil Jacob ,  Steven Soss

IPC: G11C11/16 ,  H01L27/22

Abstract: One illustrative MRAM device disclosed herein includes a first bit cell and a second bit cell. The first bit cell comprises a first access transistor and a first MTJ stack. The first MTJ stack comprises a first pinned layer and a first free layer, wherein the first pinned layer is connected to the first access transistor. The second bit cell comprises a second access transistor and a second MTJ stack. The second MTJ stack comprises a second pinned layer and a second free layer, wherein the second free layer is connected to the second access transistor.

公开(公告)号：US11776606B2

公开(公告)日：2023-10-03

申请号：US17365481

申请日：2021-07-01

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Amogh Agrawal ,  Ajey Poovannummoottil Jacob ,  Bipul C. Paul

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1697

Abstract: The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

公开(公告)号：US11415821B2

公开(公告)日：2022-08-16

申请号：US16868631

申请日：2020-05-07

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02F1/025 ,  G02F1/035

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

公开(公告)号：US11329087B2

公开(公告)日：2022-05-10

申请号：US16829553

申请日：2020-03-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Michel Rakowski ,  Won Suk Lee ,  Asif Chowdhury ,  Ajey Poovannummoottil Jacob

IPC: H01L27/146 ,  H01L31/101 ,  H01L31/0232

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

公开(公告)号：US11322636B2

公开(公告)日：2022-05-03

申请号：US16799183

申请日：2020-02-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Asif J. Chowdhury ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Michal Rakowski

IPC: H01L31/107 ,  H01L31/0232 ,  H01L31/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.