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61.发明申请Gate dielectric structures, organic semiconductors, thin film transistors and related methods 审中-公开栅介质结构，有机半导体，薄膜晶体管及相关方法公开(公告)号：US20080224127A1
公开(公告)日：2008-09-18
申请号：US11895000
申请日：2007-08-22
CPC分类号： H01L51/0533 , H01L51/0036 , H01L51/0068
摘要： Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices.
摘要翻译： 包括可用于制造薄膜晶体管器件的有机聚合物组分和有机半导体组分的栅介质结构。
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公开(公告)号：US08598305B2
公开(公告)日：2013-12-03
申请号：US13048603
申请日：2011-03-15
申请人： Antonio Facchetti , Tobin J. Marks , Hui Huang , Zhihua Chen
发明人： Antonio Facchetti , Tobin J. Marks , Hui Huang , Zhihua Chen
IPC分类号： C08G75/00
CPC分类号： H01L51/0036 , C09B69/102 , C09B69/105 , C09B69/109 , H01L51/0043 , H01L51/0558 , Y02E10/549
摘要： Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.
摘要翻译： 公开了具有期望性质的共轭聚合物作为半导体材料。 这样的聚合物可以表现出所需的电子性质，并具有加工性和/或稳定性好的加工优点。
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公开(公告)号：USRE44304E1
公开(公告)日：2013-06-18
申请号：US13396252
申请日：2012-02-14
申请人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
发明人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
IPC分类号： C07D409/00
CPC分类号： C07C49/697 , C07C17/12 , C07C45/46 , C07C45/63 , C07C45/65 , C07C49/665 , C07C255/34 , C07C255/35 , C07C2603/10 , C07C2603/52 , C07D333/22 , C07D333/24 , C07D333/28 , C08G61/02 , C08G61/12 , C08G61/123 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0051 , H01L51/0055 , H01L51/0068 , H01L51/0545 , Y02E10/549 , C07C25/02
摘要： Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
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公开(公告)号：US20110232764A1
公开(公告)日：2011-09-29
申请号：US13048603
申请日：2011-03-15
申请人： Antonio Facchetti , Tobin J. Marks , Hui Huang , Zhihua Chen
发明人： Antonio Facchetti , Tobin J. Marks , Hui Huang , Zhihua Chen
IPC分类号： H01L51/46 , C08F128/06 , C08F114/18 , C08G75/06 , H01L51/30
CPC分类号： H01L51/0036 , C09B69/102 , C09B69/105 , C09B69/109 , H01L51/0043 , H01L51/0558 , Y02E10/549
摘要： Disclosed are conjugated polymers having desirable properties as semiconducting materials. Such polymers can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.
摘要翻译： 公开了具有期望性质的共轭聚合物作为半导体材料。 这样的聚合物可以表现出所需的电子性质，并具有加工性和/或稳定性好的加工优点。
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公开(公告)号：US07910932B2
公开(公告)日：2011-03-22
申请号：US12131697
申请日：2008-06-02
申请人： Tobin J. Marks , David B. Janes , Sanghyun Ju , Peide Ye , Chongwu Zhou , Antonio Facchetti
发明人： Tobin J. Marks , David B. Janes , Sanghyun Ju , Peide Ye , Chongwu Zhou , Antonio Facchetti
IPC分类号： H01L27/14
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/7869
摘要： Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
摘要翻译： 公开了具有高场效应迁移率的完全透明的纳米线晶体管。 本文公开的完全透明的纳米线晶体管包括一个或多个纳米线，由透明无机或有机材料制备的栅极电介质，以及制造在透明衬底上的透明源极，漏极和栅极触点。 本文公开的完全透明的纳米线晶体管也可以是机械灵活的。
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公开(公告)号：US07842198B2
公开(公告)日：2010-11-30
申请号：US12113662
申请日：2008-05-01
申请人： Tobin J. Marks , Antonio Facchetti
发明人： Tobin J. Marks , Antonio Facchetti
IPC分类号： H01B1/12
CPC分类号： H01B1/128 , C08G61/126 , H01B1/127 , H01L27/32 , H01L51/0008 , H01L51/001 , H01L51/0036 , H01L51/0068 , H01L51/0508 , H01L51/0512 , H01L51/0541 , H01L51/0545
摘要： The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
摘要翻译： 新的氟碳官能化和/或杂环改性的聚噻吩，特别是α，ω-二全氟己基硫氧化物DFH-6T可以以高产率和纯度直接制备。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性，并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体，可用于制造FET迁移率〜0.01cm2 / Vs的薄膜晶体管，这是迄今为止报道的n型有机半导体的最高值。
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67.发明申请Intercalated Superlattice Compositions and Related Methods for Modulating Dielectric Property 审中-公开插层超晶格组合物和调制介电性能的相关方法公开(公告)号：US20100173165A1
公开(公告)日：2010-07-08
申请号：US12724891
申请日：2010-03-16
申请人： Tobin J. Marks , Antonio Facchetti
发明人： Tobin J. Marks , Antonio Facchetti
IPC分类号： B32B25/20 , C08K13/02 , H01L23/532
CPC分类号： H01L51/0529 , B82Y30/00 , H01L51/052 , H01L51/0533 , H01L51/0545 , H01L51/0579 , Y10T428/31536 , Y10T428/31663
摘要： Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.
摘要翻译： 组合物，使用无机部分进行介电调制的方法以及相关的器件结构。
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公开(公告)号：US07679079B1
公开(公告)日：2010-03-16
申请号：US11181132
申请日：2005-07-14
CPC分类号： H01L51/055 , H01L51/0068 , H01L51/052 , H01L51/0545 , H01L2251/308
摘要： Organic thin film transistor and related composite and device structures comprising an organic dielectric medium comprising, for instance, a non-linear optical chromophoric moiety.
摘要翻译： 有机薄膜晶体管和相关的复合和器件结构包括有机介电介质，其包括例如非线性光学发色部分。
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公开(公告)号：US07671202B2
公开(公告)日：2010-03-02
申请号：US11043814
申请日：2005-01-26
申请人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
发明人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
IPC分类号： C07D471/02 , C07D471/00
CPC分类号： H01L51/0053 , C07D221/14 , C07D221/18 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/0545 , Y02E10/549
摘要： Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
摘要翻译： 用于制造各种器件结构的单酰胺和二酰亚胺苝和萘化合物，N-和核取代的吸电子基团。
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公开(公告)号：US20090036643A1
公开(公告)日：2009-02-05
申请号：US12221123
申请日：2008-07-31
申请人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
发明人： Tobin J. Marks , Antonio Facchetti , Hakan Usta
IPC分类号： C08G75/00 , C07D409/10 , C08L81/00
CPC分类号： C07C49/697 , C07C17/12 , C07C45/46 , C07C45/63 , C07C45/65 , C07C49/665 , C07C255/34 , C07C255/35 , C07C2603/10 , C07C2603/52 , C07D333/22 , C07D333/24 , C07D333/28 , C08G61/02 , C08G61/12 , C08G61/123 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0051 , H01L51/0055 , H01L51/0068 , H01L51/0545 , Y02E10/549 , C07C25/02
摘要： Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
摘要翻译： 公开了包括可用于制备半导体材料的梯型部分的新的共轭化合物（例如单体和聚合物）。 这种共轭化合物可表现出高的n型载流子迁移率和/或良好的电流调制特性。 本发明的化合物还可以显示出双极半导体活性。 此外，本发明的化合物可以具有某些加工优点，例如在环境条件下的溶液加工性和/或良好的稳定性。
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