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    Sputtering target and process for producing the same
    65.
    发明申请
    Sputtering target and process for producing the same 失效
    溅射目标和生产方法

    公开(公告)号：US20060099126A1

    公开(公告)日：2006-05-11

    申请号：US10547816

    申请日：2004-02-03

    申请人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

    发明人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

    IPC分类号： C01F17/00 ,  B22D7/00

    CPC分类号： C04B35/645 ,  C04B35/547 ,  C04B2235/3227 ,  C04B2235/446 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/3414 ,  Y10T428/12

    摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

    摘要翻译： 一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫族化物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括： 材料]在烧结工序中在850℃以下的温度下保持1小时以上，其中在反应工序后，将该材料在比反应步骤温度高的温度进行加压烧结。 除了增加含有含有La和Cu的含氧硫属元素的P型透明导电材料靶的密度以外，能够以低的制造成本扩大靶，除此之外，可以消除靶中未反应物的存在，生产率 可以通过抑制靶中的裂纹的产生而得到改善，也可以提高通过溅射形成的沉积物的质量。

    Perovskite oxide containing hydride ion, and method for manufacturing same
    67.
    发明授权
    Perovskite oxide containing hydride ion, and method for manufacturing same 有权
    含氢离子的钙钛矿氧化物及其制造方法

    公开(公告)号：US09440228B2

    公开(公告)日：2016-09-13

    申请号：US14130184

    申请日：2012-07-05

    申请人： Hideo Hosono ,  Hiroshi Kageyama ,  Yoji Kobayashi ,  Mikio Takano ,  Takeshi Yajima

    发明人： Hideo Hosono ,  Hiroshi Kageyama ,  Yoji Kobayashi ,  Mikio Takano ,  Takeshi Yajima

    IPC分类号： B01J39/02 ,  B01J23/00 ,  C01B3/00 ,  C01B3/50 ,  C01G23/00 ,  H01M4/90 ,  B01J23/02

    CPC分类号： B01J39/02 ,  B01J23/002 ,  B01J23/02 ,  C01B3/001 ,  C01B3/503 ,  C01G23/003 ,  C01G23/005 ,  C01G23/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/52 ,  C01P2006/32 ,  C01P2006/40 ,  H01M4/9033 ,  Y02E60/324 ,  Y02E60/50

    摘要： [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures.[Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2−) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H−). This oxide, in which negatively charged hydride ions (H−) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.

    摘要翻译： [解决方案]具有氢化物离子传导性的钙钛矿氧化物，其中包含在含钛的钙钛矿氧化物中的氧化物离子（O 2 - ）的至少1at％被氢离子（H）取代。 这种氧化物（其中带负电荷的氢离子（H））用于离子传导，具有氢离子传导性和电子传导性。 作为原料，将含钛的钙钛矿氧化物与选自LiH，CaH 2，SrH 2和BaH 2的碱金属或碱土金属氢化物的粉末在300℃以上的温度范围内保持 比氢化物在真空或惰性气体气氛中的熔点高，以氢化物离子代替氧化物中的一些氧化物离子，导致氢离子进入氧位。

    PEROVSKITE OXIDE CONTAINING HYDRIDE ION, AND METHOD FOR MANUFACTURING SAME
    69.
    发明申请
    PEROVSKITE OXIDE CONTAINING HYDRIDE ION, AND METHOD FOR MANUFACTURING SAME 有权
    包含氢氧化钙的氧化铝及其制造方法

    公开(公告)号：US20140128252A1

    公开(公告)日：2014-05-08

    申请号：US14130184

    申请日：2012-07-05

    申请人： Hideo Hosono ,  Hiroshi Kageyama ,  Yoji Kobayashi ,  Mikio Takano ,  Takeshi Yajima

    发明人： Hideo Hosono ,  Hiroshi Kageyama ,  Yoji Kobayashi ,  Mikio Takano ,  Takeshi Yajima

    IPC分类号： B01J39/02

    CPC分类号： B01J39/02 ,  B01J23/002 ,  B01J23/02 ,  C01B3/001 ,  C01B3/503 ,  C01G23/003 ,  C01G23/005 ,  C01G23/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/52 ,  C01P2006/32 ,  C01P2006/40 ,  H01M4/9033 ,  Y02E60/324 ,  Y02E60/50

    摘要： [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures.[Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2−) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H−). This oxide, in which negatively charged hydride ions (H−) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.

    摘要翻译： [问题]由于氧化物离子的重量和电荷大，许多氧化物离子导体在高温下表现出高功能性，并且难以在低温下实现官能度。 [解决方案]具有氢化物离子传导性的钙钛矿氧化物，其中包含在含钛的钙钛矿氧化物中的氧化物离子（O 2 - ）的至少1at％被氢离子（H）取代。 这种氧化物（其中带负电荷的氢离子（H））用于离子传导，具有氢离子传导性和电子传导性。 作为原料，将含钛的钙钛矿氧化物与选自LiH，CaH 2，SrH 2和BaH 2的碱金属或碱土金属氢化物的粉末在300℃以上的温度范围内保持 比氢化物在真空或惰性气体气氛中的熔点高，以氢化物离子代替氧化物中的一些氧化物离子，导致氢离子进入氧位。