公开(公告)号：US6133607A

公开(公告)日：2000-10-17

申请号：US82937

申请日：1998-05-22

申请人： Hideyuki Funaki ,  Akio Nakagawa

发明人： Hideyuki Funaki ,  Akio Nakagawa

IPC分类号： H01L29/739 ,  H01L29/76

CPC分类号： H01L29/7394

摘要： The present invention provides a semiconductor device having high-speed switching characteristics and high output characteristics. More specifically, the semiconductor device includes a second conductivity type drain layer having a low impurity concentration, for decreasing the efficiency of injecting holes, and a second conductivity type contact layer having a high impurity concentration, for avoiding an increase in contact resistance. With this structure, an increase in ON-state voltage can be avoided while improving the switching rate by the second conductivity type drain layer. That is, the present invention achieves high-speed switching characteristics and high output characteristics at the same time.

摘要翻译： 本发明提供一种具有高速开关特性和高输出特性的半导体器件。 更具体地，半导体器件包括具有低杂质浓度的第二导电类型漏极层，用于降低注入孔的效率，以及具有高杂质浓度的第二导电型接触层，以避免接触电阻的增加。 利用这种结构，可以避免在通过第二导电类型漏极层改善开关速率的同时增加导通电压。 也就是说，本发明同时实现高速开关特性和高输出特性。

公开(公告)号：US5777371A

公开(公告)日：1998-07-07

申请号：US716863

申请日：1996-09-20

申请人： Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Hideyuki Funaki

发明人： Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Hideyuki Funaki

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7801 ,  H01L29/7824 ,  H01L29/42368

摘要： A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, a drift layer of the first conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a drain layer formed in the surface of the drift layer of the first conductivity type, base layers of the second conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a plurality of island-shaped source layers of the first conductivity type formed in the surfaces of the base layers of the second conductivity type, a gate electrode formed on the base layers of the second conductivity type between the source layers of the first conductivity type and the drift layer of the first conductivity type and between adjacent source layers of the first conductivity type via a gate insulating film, a drain electrode which contacts the drain layer, and source electrodes which contact both the source layers of the first conductivity type and the base layers of the second conductivity type.

摘要翻译： 高耐压半导体器件包括高电阻半导体层，选择性地形成在高电阻半导体层的表面中的第一导电类型的漂移层，形成在所述高电阻半导体层的漂移层的表面中的漏极层 第一导电类型，选择性地形成在高电阻半导体层的表面中的第二导电类型的基极层，形成在第二导电类型的基极层的表面中的多个第一导电类型的岛状源极层 形成在第一导电类型的源极层和第一导电类型的漂移层之间的第二导电类型的基极层上的栅极电极和经由栅极绝缘膜的第一导电类型的相邻源极层之间， 与漏极层接触的电极以及接触第一导电类型的源极层的源电极 第二导电类型的基层。

公开(公告)号：US5438220A

公开(公告)日：1995-08-01

申请号：US085056

申请日：1993-07-02

申请人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

发明人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286 ,  H01L29/78603 ,  H01L2924/0002

摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.

摘要翻译： 高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区 形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。 第一杂质区由扩散层形成。 扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

公开(公告)号：US09094594B2

公开(公告)日：2015-07-28

申请号：US13039508

申请日：2011-03-03

申请人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

发明人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

IPC分类号： H04N7/18 ,  H04N5/225 ,  G01C3/08 ,  G01C3/10

CPC分类号： H04N5/2254 ,  G01C3/08 ,  G01C3/10

摘要： According to an embodiment, a solid-state imaging device includes: an imaging device including an imaging area including a plurality of pixel blocks each of which includes a plurality of pixels; an image formation lens forming an image on an image formation plane by using light from a subject; an aperture unit including a plurality of aperture elements provided to associate with the plurality of pixel blocks, each of the aperture elements having an aperture portion and a shield portion, light from the image formation lens being filtered by each aperture element; a microlens array including a plurality of microlenses provided to associate with the plurality of aperture elements, each of the microlenses forming an image in the imaging area by using light filtered by an associated aperture element; and a signal processing circuit configured to process a signal of an image taken in the imaging area and estimates a distance to the subject.

摘要翻译： 根据实施例，固态成像装置包括：成像装置，其包括具有包括多个像素的多个像素块的成像区域; 图像形成透镜，通过使用来自被摄体的光在图像形成平面上形成图像; 一个光圈单元，包括多个孔眼元件，设置成与多个像素块相关联，每个孔元件具有孔部分和屏蔽部分，来自图像形成透镜的光被每个孔元件过滤; 微透镜阵列，包括设置成与所述多个孔元件相关联的多个微透镜，所述微透镜中的每一个通过使用由相关孔径元件过滤的光在所述成像区域中形成图像; 以及信号处理电路，被配置为处理在成像区域中拍摄的图像的信号，并估计到被摄体的距离。

公开(公告)号：US08711267B2

公开(公告)日：2014-04-29

申请号：US13039502

申请日：2011-03-03

申请人： Risako Ueno ,  Yoshinori Iida ,  Hideyuki Funaki

发明人： Risako Ueno ,  Yoshinori Iida ,  Hideyuki Funaki

IPC分类号： H04N5/225 ,  G02B13/16

CPC分类号： H04N9/045

摘要： According to an embodiment, a solid-state imaging device includes: an imaging element formed on a semiconductor substrate; a first optical system configured to focus an image of a subject on an imaging plane; a second optical system including a microlens array including a plurality of microlenses corresponding to the pixel blocks, and re-focusing the image of the imaging plane onto the pixel blocks corresponding to the respective microlenses; a first filter placed on the second optical system, and including a plurality of first color filters corresponding to the microlenses; and a second filter placed on the imaging element, and including a plurality of second color filters corresponding to the first color filters of the first filter. The first and second filters are designed so that the first and second color filters deviate to a periphery of the imaging area, the deviation becoming larger toward the periphery of the imaging area.

摘要翻译： 根据实施例，固态成像装置包括：形成在半导体衬底上的成像元件; 配置成将被摄体的图像聚焦在成像平面上的第一光学系统; 包括微透镜阵列的第二光学系统，所述微透镜阵列包括对应于所述像素块的多个微透镜，以及将所述成像平面的图像重新聚焦到与所述各个微透镜相对应的像素块上; 放置在第二光学系统上的第一滤光器，并且包括对应于微透镜的多个第一滤色器; 以及放置在成像元件上的第二滤光器，并且包括与第一滤光器的第一滤色器相对应的多个第二滤色器。 第一滤波器和第二滤波器被设计成使得第一和第二滤色器偏离成像区域的周边，偏离朝向成像区域的周围变大。

公开(公告)号：US08643762B2

公开(公告)日：2014-02-04

申请号：US13221195

申请日：2011-08-30

申请人： Kazuhiro Suzuki ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H04N5/225 ,  G02B17/00

CPC分类号： G02B13/0015 ,  G02B26/08 ,  G02B27/22 ,  G03B25/02 ,  G03B35/24 ,  H04N13/356

摘要： An optical element according to an embodiment includes: a lens array including a plurality of convex shaped lenses provided on a first surface thereof and taking a flat shape at a second surface which is opposite from the first surface; a lens holder comprising concave portions formed to correspond to respective lenses in the lens array, at a surface opposed to the lens array, each of the concave portions having a size which makes it possible for one of the convex shaped lenses corresponding to the concave portion to fit therein; and a drive unit configured to drive at least one of the lens array and the lens holder to bring the convex shaped lenses in the lens array and the concave portions in the lens holder into an isolation state or a contact state.

摘要翻译： 根据实施例的光学元件包括：透镜阵列，包括设置在其第一表面上的多个凸形透镜，并且在与第一表面相对的第二表面处呈平坦形状; 透镜架，其包括形成为与透镜阵列中的各个透镜相对应的凹部，在与透镜阵列相对的表面处，每个凹部具有使得可以使一个凸形透镜对应于凹部 适合其中 以及驱动单元，被配置为驱动所述透镜阵列和所述透镜保持器中的至少一个，以将所述凸形透镜置于所述透镜阵列中，并且所述透镜保持器中的所述凹部处于隔离状态或接触状态。

公开(公告)号：US08445950B2

公开(公告)日：2013-05-21

申请号：US12875546

申请日：2010-09-03

申请人： Yoshinori Iida ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki

发明人： Yoshinori Iida ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki

IPC分类号： H01L31/062

CPC分类号： H01L27/1463 ,  H01L27/1464

摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储 信号充电 读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部 并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

公开(公告)号：US20130075585A1

公开(公告)日：2013-03-28

申请号：US13361293

申请日：2012-01-30

申请人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno ,  Kazuhiro Suzuki

发明人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno ,  Kazuhiro Suzuki

IPC分类号： H01L27/146

CPC分类号： G01J1/0411 ,  G01J1/0242 ,  G01J1/0429 ,  G01J1/4228 ,  G01J4/04 ,  G01N21/21 ,  G02B5/3025 ,  G02B27/0075 ,  H01L27/14627 ,  H01L27/14629

摘要： According to one embodiment, a solid imaging device includes an imaging substrate, an imaging lens, a microlens array substrate and a polarizing plate array substrate. The imaging substrate has a plurality of pixels formed on an upper side thereof. The imaging lens is provided above the imaging substrate. The optical axis in the imaging lens intersects with the upper side of the imaging substrate. The microlens array substrate is provided between the imaging substrate and the imaging lens. A surface in the microlens array substrate has a plurality of microlenses arranged two-dimensionally. The surface of the microlens array intersects with the optical axis. The polarizing plate array substrate is provided between the imaging substrate and the imaging lens. The plurality of kinds of polarizing plates in the polarizing plate array substrate having polarization axes in mutually different directions are arranged two dimensionally.

摘要翻译： 根据一个实施例，固体成像装置包括成像基板，成像透镜，微透镜阵列基板和偏振板阵列基板。 成像基板在其上侧形成有多个像素。 成像透镜设置在成像基板的上方。 成像透镜中的光轴与成像基板的上侧相交。 微透镜阵列基板设置在成像基板和成像透镜之间。 微透镜阵列基板中的表面具有二维布置的多个微透镜。 微透镜阵列的表面与光轴相交。 偏振板阵列基板设置在成像基板和成像透镜之间。 偏振板阵列基板中的偏振板在相互不同的方向上具有偏振轴的多种偏振片被二维排列。

公开(公告)号：US20120057020A1

公开(公告)日：2012-03-08

申请号：US13039508

申请日：2011-03-03

申请人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

发明人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

IPC分类号： H04N7/18

CPC分类号： H04N5/2254 ,  G01C3/08 ,  G01C3/10

摘要： According to an embodiment, a solid-state imaging device includes: an imaging device including an imaging area including a plurality of pixel blocks each of which includes a plurality of pixels; an image formation lens forming an image on an image formation plane by using light from a subject; an aperture unit including a plurality of aperture elements provided to associate with the plurality of pixel blocks, each of the aperture elements having an aperture portion and a shield portion, light from the image formation lens being filtered by each aperture element; a microlens array including a plurality of microlenses provided to associate with the plurality of aperture elements, each of the microlenses forming an image in the imaging area by using light filtered by an associated aperture element; and a signal processing circuit configured to process a signal of an image taken in the imaging area and estimates a distance to the subject.

摘要翻译： 根据实施例，固态成像装置包括：成像装置，其包括具有包括多个像素的多个像素块的成像区域; 图像形成透镜，通过使用来自被摄体的光在图像形成平面上形成图像; 一个光圈单元，包括多个孔眼元件，设置成与多个像素块相关联，每个孔元件具有孔部分和屏蔽部分，来自图像形成透镜的光被每个孔元件过滤; 微透镜阵列，包括设置成与所述多个孔元件相关联的多个微透镜，所述微透镜中的每一个通过使用由相关孔径元件过滤的光在所述成像区域中形成图像; 以及信号处理电路，被配置为处理在成像区域中拍摄的图像的信号，并估计到被摄体的距离。

公开(公告)号：US07906823B2

公开(公告)日：2011-03-15

申请号：US12195587

申请日：2008-08-21

申请人： Kazuhiro Suzuki ,  Michihiko Nishigaki ,  Yutaka Onozuka ,  Hiroshi Yamada ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Michihiko Nishigaki ,  Yutaka Onozuka ,  Hiroshi Yamada ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H01L29/84

CPC分类号： B81C1/00269 ,  B81C2203/0145

摘要： A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.

摘要翻译： MEMS器件包括形成在半导体衬底上的MEMS单元和设置有孔并用于密封MEMS单元的盖。 孔用密封材料密封，形状为球形或半球形。