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257 条记录 (耗时 0.029 秒)

    Semiconductor memory device
    61.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US07518178B2

    公开(公告)日：2009-04-14

    申请号：US11531933

    申请日：2006-09-14

    申请人： Akira Takashima ,  Hiroshi Watanabe ,  Tatsuo Shimizu ,  Takeshi Yamaguchi

    发明人： Akira Takashima ,  Hiroshi Watanabe ,  Tatsuo Shimizu ,  Takeshi Yamaguchi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/51 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

    摘要： A semiconductor memory device includes a semiconductor substrate, a first insulating film which is formed on the semiconductor substrate, a floating gate electrode which is formed on the first insulating film and made of a conductive metal oxide, a second insulating film which is formed on the floating gate electrode, has a relative dielectric constant of not less than 7.8, and is made of an insulating metal oxide of a paraelectric material, and a control gate electrode which is formed on the second insulating film and made of one of a metal and a conductive metal oxide.

    摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上并由导电金属氧化物制成的浮栅，形成在第一绝缘膜上的第二绝缘膜 浮栅电极具有不小于7.8的相对介电常数，并且由绝缘材料的绝缘金属氧化物制成，并且控制栅电极形成在第二绝缘膜上，由金属和 导电金属氧化物。

    Semiconductor device and method for manufacturing same
    62.
    发明申请
    Semiconductor device and method for manufacturing same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20090011537A1

    公开(公告)日：2009-01-08

    申请号：US12213918

    申请日：2008-06-26

    申请人： Tatsuo Shimizu ,  Takeshi Yamaguchi ,  Yukie Nishikawa

    发明人： Tatsuo Shimizu ,  Takeshi Yamaguchi ,  Yukie Nishikawa

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/28194 ,  H01L21/28202 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

    摘要： The present invention is to obtain an MIS transistor which allows considerable reduction in threshold fluctuation for each transistor and has a low threshold voltage. First gate electrode material for nMIS and second gate electrode material for pMIS can be mutually converted to each other, so that a process can be simplified. Such a fact that a dependency of a work function on a doping amount is small is first disclosed, so that fluctuation in threshold voltage for each transistor hardly occurs.

    摘要翻译： 本发明是为了获得允许每个晶体管的阈值波动显着降低并且具有低阈值电压的MIS晶体管。 用于nMIS的第一栅电极材料和用于pMIS的第二栅极电极材料可以相互转换，从而可以简化工艺。 首先公开了功函数对掺杂量的依赖性小的事实，因此几乎不发生各晶体管的阈值电压的波动。

    Semiconductor device and method for manufacturing the same
    63.
    发明申请
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20080318404A1

    公开(公告)日：2008-12-25

    申请号：US12149572

    申请日：2008-05-05

    申请人： Masamichi Suzuki ,  Daisuke Matsushita ,  Takeshi Yamaguchi

    发明人： Masamichi Suzuki ,  Daisuke Matsushita ,  Takeshi Yamaguchi

    IPC分类号： H01L21/28

    CPC分类号： H01L29/517 ,  H01L21/2807 ,  H01L21/28194 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/513

    摘要： A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.

    摘要翻译： 半导体器件包括硅衬底; 形成在所述硅基板上的绝缘层，所述绝缘层含有至少一种选自Hf，Zr，Ti和Ta中的至少一种元素的氧化物; 形成在所述绝缘层上的电极; 以及包含La和Al的金属氧化物层，所述金属氧化物层设置在所述硅衬底和所述绝缘层之间的界面中的至少一个以及所述绝缘层和所述电极之间的界面。

    Air cooled oil cooler
    67.
    发明授权
    Air cooled oil cooler 失效
    风冷式油冷却器

    公开(公告)号：US07367386B2

    公开(公告)日：2008-05-06

    申请号：US11332288

    申请日：2006-01-17

    申请人： Junichi Sato ,  Takeshi Yamaguchi ,  Tatsuhiro Ozawa ,  Norimitsu Matsudaira

    发明人： Junichi Sato ,  Takeshi Yamaguchi ,  Tatsuhiro Ozawa ,  Norimitsu Matsudaira

    IPC分类号： F28D1/02

    CPC分类号： F01M5/002 ,  F28D1/0333 ,  F28D2021/0089 ,  F28F1/128 ,  F28F3/027

    摘要： An air cooled oil cooler has an upper plate, a lower plate and a plurality of tubes and outer fins disposed therebetween. Each tube contains an inner offset fin, and the outer fins formed in a corrugated shape and each having one return louver on an intermediate portion between a top portion and a bottom portion of the outer fin. The outer fins is disposed between the tubes so that the tubes and the outer fins are arranged alternatively and stacked in a pile between the upper and lower plates. The tubes are formed to be flat tubes having a height-width ratio of the tube to be 4.8-7.4%.

    摘要翻译： 空气冷却油冷却器具有上板，下板和设置在它们之间的多个管和外部翅片。 每个管包括内部偏置翅片，并且外部翅片形成为波纹形状，并且每个具有在外部翅片的顶部和底部之间的中间部分上的一个返回百叶窗。 外翅片设置在管之间，使得管和外翅片交替布置并堆叠在上板和下板之间的堆中。 管形成为管的高度 - 宽度比为4.8-7.4％的扁平管。