公开(公告)号：US20150179730A1

公开(公告)日：2015-06-25

申请号：US14135491

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Imran Hashim ,  Xiangxin Rui

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01L27/10805

Abstract: A zirconium oxide based dielectric material is used in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the zirconium oxide based dielectric is doped. In some embodiments, the dopant includes at least one of aluminum, silicon, or yttrium. In some embodiments, the zirconium oxide based dielectric is formed as a nanolaminate of zirconium oxide and a dopant metal oxide.

Abstract translation: 在形成用于微电子逻辑电路中的去耦电容器中使用基于氧化锆的电介质材料。 在一些实施方案中，掺杂氧化锆基电介质。 在一些实施方案中，掺杂剂包括铝，硅或钇中的至少一种。 在一些实施方案中，基于氧化锆的电介质形成为氧化锆和掺杂剂金属氧化物的纳米氨酸盐。

公开(公告)号：US20150171323A1

公开(公告)日：2015-06-18

申请号：US14636421

申请日：2015-03-03

Applicant: Intermolecular Inc. ,  KABUSHIKI KAISHA TOSHIBA ,  SanDisk 3D LLC

Inventor： Imran Hashim ,  Ryan C. Clarke ,  Nan Lu ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C11/56 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253

Abstract: Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元，每个单元具有三个或更多个电阻状态，并且能够存储多个数据位，以及制造和操作这样的ReRAM单元的方法。 这样的ReRAM单元或更具体地，它们的电阻式开关层具有宽范围的电阻状态，并且在另一状态下能够在一种状态下非常导电（例如，约1kOhm），并且在另一状态下具有很强的电阻（例如约1MOhm）。 在一些实施例中，电阻状态之间的电阻比可以在10和1,000之间甚至高达10,000。 电阻式开关层还允许建立可分配不同数据值的稳定和不同的中间电阻状态。 这些层可以被配置为使用比常规系统更少的编程脉冲在其电阻状态之间切换，通过使用特定的材料，开关和电阻状态阈值。

公开(公告)号：US09012881B2

公开(公告)日：2015-04-21

申请号：US14255749

申请日：2014-04-17

Applicant: Intermolecular, Inc.

Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

IPC: H01L45/00 ,  H01L27/01 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

公开(公告)号：US09006023B2

公开(公告)日：2015-04-14

申请号：US14492363

申请日：2014-09-22

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Imran Hashim

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.

Abstract translation: 提供了具有由各种材料形成的扩散阻挡层的电阻随机存取存储器（ReRAM）单元，例如氧化铍或钛硅氮化物。 在ReRAM单元中使用的电阻开关层通常需要具有至少一个惰性界面，使得基本上没有材料通过该界面。 另一个（反应式）接口可用于引入和去除导致切换的电阻式开关层的缺陷。 虽然一些电极材料（例如铂和掺杂多晶硅）可能形成惰性界面，但是这些材料通常难以整合。 为了扩大电极材料选择，扩散阻挡层设置在电极和电阻开关层之间，并与电阻式开关层形成惰性界面。 在一些实施例中，氮化钽和氮化钛可用于由这种扩散阻挡层分开的电极。

公开(公告)号：US20140225056A1

公开(公告)日：2014-08-14

申请号：US14255749

申请日：2014-04-17

Applicant: Intermolecular, Inc.

Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

公开(公告)号：US20140175603A1

公开(公告)日：2014-06-26

申请号：US13722885

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Venkat Ananthan ,  Imran Hashim ,  Prashant B. Phatak

IPC: H01L49/02

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/40 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633

Abstract: MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.

Abstract translation: 提供了可适用于存储器件应用的MIMCAP器件，例如用于交叉点存储器阵列的电流选择器装置。 与MIMCAP隧道二极管相比，MIMCAP器件与肖特基二极管相比可以具有更低的热量预算，并且可控制的较低势垒高度和较低的串联电阻。 MIMCAP二极管可以包括夹在具有不同功函数值的两个电极之间的低缺陷电介质层，高缺陷电介质层。

公开(公告)号：US20140175367A1

公开(公告)日：2014-06-26

申请号：US13722569

申请日：2012-12-20

Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

Inventor： Mihir Tendulkar ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y

Abstract translation: 提供了包括薄电阻开关层的电阻随机存取存储器（ReRAM）单元。 在一些实施例中，电阻式开关层的厚度小于约50埃，甚至小于约30埃。 通过控制它们的组成和使用特定的制造技术来维持这种薄层的电阻开关特性。 具体地，可以使用氧化钽等低氧空位金属氧化物。 氧空位的浓度可以小于5原子％。 在一些实施例中，电阻式开关层还包括氮和。 例如，一些特定电阻开关层的组成可以由Ta 2 O 5-X N Y表示，其中Y <（X-0.01）。 电阻开关层可以使用原子层沉积（ALD）形成。

公开(公告)号：US20140175362A1

公开(公告)日：2014-06-26

申请号：US13721450

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.

Abstract translation: 提供的是ReRAM单元，每个单元在电极和电阻切换层之间具有至少一个界面，其最大场值小于0.25。 形成这种界面的电极材料包括掺杂有镧，铝，铒钇或铽的钽氮化物（例如TaX（掺杂剂）YN，其中X为至少约0.95）。 电极材料具有低功函数（例如小于约4.5eV）。 同时，电阻式开关材料具有较高的相对介电常数（例如大于约30）和高电子亲和力（大于3.5eV）。 氧化铌是合适的电阻式开关材料的一个例子。 连接电阻式开关层的另一电极可以具有不同的特性，并且在一些实施例中可以是惰性电极。

公开(公告)号：US08735217B2

公开(公告)日：2014-05-27

申请号：US14017942

申请日：2013-09-04

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Dipankar Pramanik ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

IPC: H01L29/02

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

公开(公告)号：US20140103282A1

公开(公告)日：2014-04-17

申请号：US13652742

申请日：2012-10-16

Applicant: INTERMOLECULAR INC.

Inventor： Yun Wang ,  Imran Hashim

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.

Abstract translation: 提供了具有由各种材料形成的扩散阻挡层的电阻随机存取存储器（ReRAM）单元，例如氧化铍或钛硅氮化物。 在ReRAM单元中使用的电阻开关层通常需要具有至少一个惰性界面，使得基本上没有材料通过该界面。 另一个（反应式）接口可用于引入和去除导致切换的电阻式开关层的缺陷。 虽然一些电极材料（例如铂和掺杂多晶硅）可能形成惰性界面，但是这些材料通常难以整合。 为了扩大电极材料选择，扩散阻挡层设置在电极和电阻开关层之间，并与电阻式开关层形成惰性界面。 在一些实施例中，氮化钽和氮化钛可用于由这种扩散阻挡层分开的电极。