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    THERMAL SPIN TORQURE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY
    61.
    发明申请
    THERMAL SPIN TORQURE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
    热旋转转矩磁阻随机存取存储器

    公开(公告)号：US20140169082A1

    公开(公告)日：2014-06-19

    申请号：US13969326

    申请日：2013-08-16

    Applicant: International Business Machines Corporation

    Inventor： Daniel C. Worledge ,  Guohan Hu

    IPC: G11C11/16

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus includes a magnetic tunnel junction and a tunnel junction programming circuit. The magnetic tunnel junction includes a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The free layer includes a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature. The tunnel junction programming circuit is configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.

    Abstract translation: 热自旋转矩传递磁阻随机存取存储器（MRAM）装置包括磁隧道结和隧道结编程电路。 磁隧道结包括具有固定磁极性的参考层，隧道势垒层和与参考层相对的隧道势垒层相对侧的自由层。 自由层包括具有第一居里温度的第一层和具有不同于第一居里温度的第二居里温度的第二层。 隧道结编程电路被配置为施加电流通过磁性隧道结以在磁性隧道结中产生写入温度并写入磁性隧道结的自由层。

    FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY
    62.
    发明申请
    FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY 有权

    公开(公告)号：US20250040444A1

    公开(公告)日：2025-01-30

    申请号：US18358057

    申请日：2023-07-25

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： MATTHIAS GEORG GOTTWALD ,  Guohan Hu ,  Virat Vasav Mehta ,  John Bruley ,  Alexander Reznicek

    IPC: H10N50/85 ,  H01F10/32 ,  H10N50/01

    Abstract: Embodiments of present invention provide a magnetoresistive random-access-memory (MRAM). The MRAM includes a reference layer; a tunnel barrier layer of magnesium-oxide (MgO); and a free layer, where the free layer includes a first cobalt-iron-boron (CoFeB) layer on top of the tunnel barrier layer; a spacer layer on top of the first CoFeB layer; a second CoFeB layer on top of the spacer layer; and a capping layer of MgO on top of the second CoFeB layer. Additionally, the first and the second CoFeB layer are substantially depleted of boron (B) to include respectively a first region adjacent to the tunnel barrier layer and the capping layer respectively and a second region adjacent to the spacer layer, where the first regions of the first and the second CoFeB layer include crystallized cobalt-iron (CoFe) and the second regions of the first and the second CoFeB layer include amorphous CoFe alloy.

    Planar solenoid inductors with antiferromagnetic pinned cores
    65.
    发明授权
    Planar solenoid inductors with antiferromagnetic pinned cores 有权

    公开(公告)号：US11342115B2

    公开(公告)日：2022-05-24

    申请号：US16560132

    申请日：2019-09-04

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Guohan Hu ,  Naigang Wang

    IPC: H01F27/00 ,  H01F41/04 ,  H01F27/28 ,  H01F17/00 ,  H01F3/10

    Abstract: A planar magnetic structure includes a closed loop structure having a plurality of core segments divided into at least two sets. A coil is formed about one or more core segments. A first antiferromagnetic layer is formed on a first set of core segments, and a second antiferromagnetic layer is formed on a second set of core segments. The first and second antiferromagnetic layers include different blocking temperatures and have an easy axis pinning a magnetic moment in two different directions, wherein when current flows through the coil, the magnetic moments rotate to form a closed magnetic loop in the closed loop structure.

    MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE (STT) MRAM
    66.
    发明申请
    MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE (STT) MRAM 有权

    公开(公告)号：US20220123049A1

    公开(公告)日：2022-04-21

    申请号：US17562662

    申请日：2021-12-27

    Applicant: International Business Machines Corporation

    Inventor： Daniel Worledge ,  Guohan Hu

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free layer structure of the present application substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers. The lower Hk value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the second magnetic free layer and thus reduces, and even eliminates, write errors.

    MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
    68.
    发明申请
    MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA 审中-公开

    公开(公告)号：US20200259071A1

    公开(公告)日：2020-08-13

    申请号：US16271317

    申请日：2019-02-08

    Applicant: International Business Machines Corporation

    Inventor： Daniel Worledge ,  Guohan Hu

    IPC: H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

    Abstract: A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term kT, resulting in a temperature independent Delta.

    PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES
    69.
    发明申请
    PLANAR SOLENOID INDUCTORS WITH ANTIFERROMAGNETIC PINNED CORES 审中-公开

    公开(公告)号：US20200058440A1

    公开(公告)日：2020-02-20

    申请号：US16665314

    申请日：2019-10-28

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Guohan Hu ,  Naigang Wang

    IPC: H01F41/04 ,  H01F3/10 ,  H01F17/00 ,  H01F27/28

    Abstract: A planar magnetic structure includes a closed loop structure having a plurality of core segments divided into at least two sets. A coil is formed about one or more core segments. A first antiferromagnetic layer is formed on a first set of core segments, and a second antiferromagnetic layer is formed on a second set of core segments. The first and second antiferromagnetic layers include different blocking temperatures and have an easy axis pinning a magnetic moment in two different directions, wherein when current flows through the coil, the magnetic moments rotate to form a closed magnetic loop in the closed loop structure.

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