公开(公告)号：US20140291802A1

公开(公告)日：2014-10-02

申请号：US13853301

申请日：2013-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shawn A. Adderly ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Eric J. White

IPC: H01L23/498 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process.

Abstract translation: 公开了具有金属线的半导体结构和制造方法，其减少或消除挤出形成。 该方法包括形成金属布线，该金属布线包括具有上部约束层的金属材料的层状结构。 该方法还包括在金属布线上形成膜，该膜在退火过程中防止金属挤出。

公开(公告)号：US20140246777A1

公开(公告)日：2014-09-04

申请号：US13783943

申请日：2013-03-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Max G. Levy ,  Gary L. Milo ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Steven S. Williams

IPC: H01L23/482 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76883 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

Abstract translation: 本发明的方面涉及半导体结构中的受控金属挤压开口。 各种实施例包括半导体结构。 该结构包括铝层。 铝层包括在铝层内的铝岛，以及横向挤压接收开口，其延伸穿过靠近铝岛的铝层。 该开口包括半导体结构的铝层的横向挤压。 另外的实施例包括形成半导体结构的方法。 该方法可以包括在钛层上形成铝层。 铝层包括铝层内的铝岛。 该方法还可以包括在铝层内形成延伸穿过邻近铝岛的铝层的开口。 该开口包括半导体层的铝层的侧向挤压。

公开(公告)号：US08765568B2

公开(公告)日：2014-07-01

申请号：US14048629

申请日：2013-10-08

Applicant: International Business Machines Corporation

Inventor： Joseph M. Lukaitis ,  Deborah M. Massey ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Kimball M. Watson

IPC: H01L23/36

CPC classification number: H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L27/0211 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.

Abstract translation: 制造该结构的结构和方法包括：半导体衬底，其具有限定水平方向的顶表面和从最接近半导体衬底的顶表面的最底层到距离顶表面最远的最高水平层叠的多个互连层。 每个互连层包括在垂直于水平方向的垂直方向上彼此物理连接的垂直金属导体。 最底层的垂直导体物理地连接到衬底的顶表面，垂直导体形成连接到半导体衬底的散热片。 一个电阻器被包含在最上层的上方的层中。 垂直导体在电阻器的向下垂直电阻器占位面下对准，并且每个互连级别还包括位于水平方向上并且连接到垂直导体的水平金属导体。

公开(公告)号：US20140131878A1

公开(公告)日：2014-05-15

申请号：US13674498

申请日：2012-11-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. Gambino ,  David L. Harame ,  Baozhen Li ,  Timothy D. Sullivan ,  Bjorn K. A. Zetterlund

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices with enhanced electromigration performance and methods of manufacture are disclosed. The method includes forming at least one metal line in electrical contact with a device. The method further includes forming at least one staple structure in electrical contact with the at least one metal line. The at least one staple structure is formed such that electrical current passing through the at least one metal line also passes through the at least staple structure to reduce electromigration issues.

Abstract translation: 公开了具有增强的电迁移性能和制造方法的半导体器件。 该方法包括形成与装置电接触的至少一个金属线。 该方法还包括形成与至少一个金属线电接触的至少一个钉结构。 形成至少一个钉结构，使得通过至少一个金属线的电流也穿过至少缝合结构以减少电迁移问题。