公开(公告)号：US09548349B2

公开(公告)日：2017-01-17

申请号：US14314223

申请日：2014-06-25

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  David C. Thomas

IPC: H01L27/00 ,  H01L49/02

CPC classification number: H01L28/87 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76895

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

Abstract translation: 实施例公开了一种制造方法和包括金属 - 绝缘体 - 金属（MIM）电容器的半导体结构。 制造方法包括在半导体衬底上沉积第一导电材料。 第一介电材料沉积在第一导电材料上。 第二导电材料沉积在第一电介质材料上。 通过蚀刻第二导电材料形成顶板。 通过蚀刻第一导电材料的一部分来形成底板。 在第一电介质层中形成至少一个开口至第一导电材料。

公开(公告)号：US20160343798A1

公开(公告)日：2016-11-24

申请号：US15226186

申请日：2016-08-02

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  David C. Thomas

IPC: H01L49/02

CPC classification number: H01L28/87 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76895

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

公开(公告)号：US09087839B2

公开(公告)日：2015-07-21

申请号：US13853301

申请日：2013-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shawn A. Adderly ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Eric J. White

IPC: H01L21/20 ,  H01L23/522 ,  H01L49/02 ,  H01L23/532

CPC classification number: H01L23/5223 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal extrusion during an annealing process.

Abstract translation: 公开了具有金属线的半导体结构和制造方法，其减少或消除挤出形成。 该方法包括形成金属布线，该金属布线包括具有上部约束层的金属材料的层状结构。 该方法还包括在金属布线上形成膜，该膜在退火过程中防止金属挤出。

公开(公告)号：US09825120B2

公开(公告)日：2017-11-21

申请号：US15226186

申请日：2016-08-02

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  David C. Thomas

IPC: H01L21/31 ,  H01L49/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L28/87 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76895

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

公开(公告)号：US09275868B2

公开(公告)日：2016-03-01

申请号：US13946456

申请日：2013-07-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shawn A. Adderly ,  Jeffrey P. Gambino ,  Max L. Lifson ,  Matthew D. Moon ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/30604 ,  H01L21/3065 ,  H01L21/3083

Abstract: Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer through the patterned material to form a uniform roughness.

Abstract translation: 公开了具有均匀背面粗糙度的基板（晶片）和制造方法。 该方法包括在晶片的背面形成材料。 该方法还包括图案化材料以暴露晶片背面的部分。 该方法还包括通过图案化材料粗糙化晶片的背面以形成均匀的粗糙度。

公开(公告)号：US09825119B2

公开(公告)日：2017-11-21

申请号：US15226185

申请日：2016-08-02

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  David C. Thomas

IPC: H01L21/31 ,  H01L49/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L28/87 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76895

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

公开(公告)号：US20160343797A1

公开(公告)日：2016-11-24

申请号：US15226185

申请日：2016-08-02

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  David C. Thomas

IPC: H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L28/87 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76895

Abstract: Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

公开(公告)号：US20150348876A1

公开(公告)日：2015-12-03

申请号：US14825778

申请日：2015-08-13

Applicant: International Business Machines Corporation

Inventor： James W. Adkisson ,  Yoba Amoah ,  Jeffrey P. Gambino ,  Christine A. Leggett ,  Max L. Lifson ,  Charles F. Musante ,  Sruthi Samala ,  David C. Thomas

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract translation: 一种包括通过基板的厚度形成贯通基板的方法，从基板的前侧到基板的背面测量基板的厚度，去除基板的第一部分以形成开口 衬底的背面，使得衬底的第二部分保持与贯穿衬底通孔的垂直侧壁直接接触，并用与衬底相比具有较低弹性模量的替代材料填充该开口。

公开(公告)号：US09312205B2

公开(公告)日：2016-04-12

申请号：US14195940

申请日：2014-03-04

Applicant: International Business Machines Corporation

Inventor： James W. Adkisson ,  Yoba Amoah ,  Jeffrey P. Gambino ,  Christine A. Leggett ,  Max L. Lifson ,  Charles F. Musante ,  Sruthi Samala ,  David C. Thomas

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Abstract translation: 一种包括通过基板的厚度形成贯通基板的方法，从基板的前侧到基板的背面测量基板的厚度，去除基板的第一部分以形成开口 衬底的背面，使得衬底的第二部分保持与贯穿衬底通孔的垂直侧壁直接接触，并用与衬底相比具有较低弹性模量的替代材料填充该开口。

公开(公告)号：US09059258B2

公开(公告)日：2015-06-16

申请号：US13783943

申请日：2013-03-04

Applicant: International Business Machines Corporation

Inventor： Max G. Levy ,  Gary L. Milo ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Steven S. Williams

IPC: H01L21/768 ,  H01L49/02

CPC classification number: H01L23/5283 ,  H01L21/76883 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

Abstract translation: 本发明的方面涉及半导体结构中的受控金属挤压开口。 各种实施例包括半导体结构。 该结构包括铝层。 铝层包括在铝层内的铝岛，以及横向挤压接收开口，其延伸穿过靠近铝岛的铝层。 该开口包括半导体结构的铝层的横向挤压。 另外的实施例包括形成半导体结构的方法。 该方法可以包括在钛层上形成铝层。 铝层包括铝层内的铝岛。 该方法还可以包括在铝层内形成延伸穿过邻近铝岛的铝层的开口。 该开口包括半导体层的铝层的侧向挤压。