Reflective film interface to restore transverse magnetic wave contrast in lithographic processing
    62.
    发明申请
    Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 失效
    反光膜界面,以恢复光刻处理中的横向磁波对比度

    公开(公告)号:US20070099122A1

    公开(公告)日:2007-05-03

    申请号:US11265822

    申请日:2005-11-03

    IPC分类号: G03F7/20

    CPC分类号: G03F7/70216

    摘要: A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

    摘要翻译: 一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。 采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层,抗蚀剂层具有厚度。 成像工具适于将含有空间图像的辐射投射到抗蚀剂层上,其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置,以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分,并且排除干涉图形的较低对比度部分 从抗蚀剂层区域的光敏剂厚度方向的图案,以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

    Renesting interaction map into design for efficient long range calculations
    63.
    发明申请
    Renesting interaction map into design for efficient long range calculations 失效
    将交互图重新设计成有效的长距离计算

    公开(公告)号:US20050091634A1

    公开(公告)日:2005-04-28

    申请号:US10694339

    申请日:2003-10-27

    CPC分类号: G03F1/36 G03F1/68 G06F17/5068

    摘要: Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchal arrangement to ultimately correct for optical lithography.

    摘要翻译: 方法和程序存储装置,用于通过将具有多个多边形的单元阵列布局划分成覆盖布局的多个单元来执行基于模型的光学光刻校正。 该布局代表了所需的设计数据层次结构。 然后根据多边形与多个单元之间的相互作用产生密度图,然后卷积每个单元内的密度。 使用卷积密度形成交互图,然后截断交互图以形成截断单元格的图。 截短的细胞的基本相同的分组然后分别分离成多个桶中的不同的桶,由此这些桶中的每一个都包含一组相同的截断细胞组。 使用这些存储桶生成层次排列,并且使用层级排列来强制执行所需的设计数据层级,以最终校正光学光刻。

    Method for designing optical lithography masks for directed self-assembly
    64.
    发明授权
    Method for designing optical lithography masks for directed self-assembly 有权
    用于定向自组装的光学光刻掩模的设计方法

    公开(公告)号:US08856693B2

    公开(公告)日:2014-10-07

    申请号:US13606055

    申请日:2012-09-07

    IPC分类号: G06F17/50 G03F7/00 G03F1/38

    摘要: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

    摘要翻译: 一种用于设计光学掩模的方法和计算机系统,用于在基底上的光致抗蚀剂层中形成预模式开口,其中光致抗蚀剂层和预图案开口用自组装材料涂覆,所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括:从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

    Constrained optimization of lithographic source intensities under contingent requirements
    65.
    发明授权
    Constrained optimization of lithographic source intensities under contingent requirements 失效
    偶然要求下光刻源强度的约束优化

    公开(公告)号:US08605254B2

    公开(公告)日:2013-12-10

    申请号:US12605732

    申请日:2009-10-26

    IPC分类号: G03B27/54

    摘要: A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.

    摘要翻译: 描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。 该方法包括接收图像图案。 确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。 基于一个或多个偶然强度条件对一组强度值施加线性约束。 偶然强度条件包括规定偶然约束的整数变量。 该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。 强度值集合表示一组源像素的强度。 输出强度值集合。 还描述了装置和计算机可读存储介质。

    Method for designing optical lithography masks for directed self-assembly
    66.
    发明授权
    Method for designing optical lithography masks for directed self-assembly 有权
    用于定向自组装的光学光刻掩模的设计方法

    公开(公告)号:US08336003B2

    公开(公告)日:2012-12-18

    申请号:US12708570

    申请日:2010-02-19

    IPC分类号: G06F17/50

    摘要: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

    摘要翻译: 一种用于设计光学掩模的方法和计算机系统,用于在基底上的光致抗蚀剂层中形成预模式开口,其中光致抗蚀剂层和预图案开口用自组装材料涂覆,所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括:从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

    METHOD FOR DESIGNING OPTICAL LITHOGRAPHY MASKS FOR DIRECTED SELF-ASSEMBLY
    67.
    发明申请
    METHOD FOR DESIGNING OPTICAL LITHOGRAPHY MASKS FOR DIRECTED SELF-ASSEMBLY 有权
    用于指导自组装的光学绘图掩模的方法

    公开(公告)号:US20110209106A1

    公开(公告)日:2011-08-25

    申请号:US12708570

    申请日:2010-02-19

    IPC分类号: G06F17/50

    摘要: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

    摘要翻译: 一种用于设计光学掩模的方法和计算机系统,用于在基底上的光致抗蚀剂层中形成预模式开口,其中光致抗蚀剂层和预图案开口用自组装材料涂覆,所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括:从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

    Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements
    68.
    发明申请
    Constrained Optimization Of Lithographic Source Intensities Under Contingent Requirements 失效
    有限要求的光刻源强度的约束优化

    公开(公告)号:US20110096313A1

    公开(公告)日:2011-04-28

    申请号:US12605732

    申请日:2009-10-26

    IPC分类号: G03B27/54

    摘要: A method for illuminating a mask to project a desired image pattern into a photoactive material is described. The method includes receiving an image pattern. Determining a relationship between source pixels in a set of source pixels to desired intensities at one or more points in the image pattern is performed. Linear constraints are imposed on a set of intensity values based on one or more contingent intensity condition. The contingent intensity conditions include integer variables specifying contingent constraints. The method includes determining values of the set of intensity values in accordance with the linear constraints, using a constrained optimization algorithm. The set of intensity values represents intensities of a set of source pixels. The set of intensity values are output. Apparatus and computer readable storage media are also described.

    摘要翻译: 描述了用于照射掩模以将期望的图像图案投影到光活性材料中的方法。 该方法包括接收图像图案。 确定一组源像素中的源像素与图像图案中的一个或多个点处的期望强度之间的关系。 基于一个或多个偶然强度条件对一组强度值施加线性约束。 偶然强度条件包括规定偶然约束的整数变量。 该方法包括使用约束优化算法根据线性约束来确定强度值集合的值。 强度值集合表示一组源像素的强度。 输出强度值集合。 还描述了装置和计算机可读存储介质。

    Directed self-assembly of block copolymers using segmented prepatterns
    69.
    发明申请
    Directed self-assembly of block copolymers using segmented prepatterns 有权
    使用分段预制图的嵌段共聚物的定向自组装

    公开(公告)号:US20100294740A1

    公开(公告)日:2010-11-25

    申请号:US12468391

    申请日:2009-05-19

    IPC分类号: H01B13/00 B05D7/24 B05D3/00

    摘要: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

    摘要翻译: 例如使用光刻法形成衬底中的开口,其中开口具有侧壁,其横截面由轮廓和凸形的部分给出。 例如,开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻,在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上,并允许自组装。 在开口中形成离散的,分离的畴,其被去除以形成孔,其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物(和任何添加剂)在没有任何侧壁的情况下自组装就会发生。

    Simultaneous computation of multiple points on one or multiple cut lines
    70.
    发明授权
    Simultaneous computation of multiple points on one or multiple cut lines 有权
    在一条或多条切割线上同时计算多个点

    公开(公告)号:US07840057B2

    公开(公告)日:2010-11-23

    申请号:US11874281

    申请日:2007-10-18

    IPC分类号: G06K9/00 G06F17/50

    CPC分类号: G03F1/36

    摘要: Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

    摘要翻译: 方法和程序存储设备,用于通过提供具有交互距离的感兴趣区域(ROI)和定位ROI内的至少一个多边形来执行基于模型的光学邻近度校正。 在多边形的至少一个侧边缘上,在ROI内产生代表一组顶点或多个切割线的采样点的切割线。 确定角位置,并且切割线的位于切割线和多边形的侧边缘之间的交叉点的相对侧上的切割线的第一和第二部分,然后通过将原始ROI延伸超过其相互作用距离来生成新的ROI 在这种角度位置上,以及切割线的第一和第二部分。 以这种方式,可以在各种不同的方向上产生各种新的ROI,以最终校正光学邻近度。