公开(公告)号：US08856693B2

公开(公告)日：2014-10-07

申请号：US13606055

申请日：2012-09-07

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

IPC分类号： G06F17/50 ,  G03F7/00 ,  G03F1/38

CPC分类号： G03F1/38 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/00 ,  G03F7/0002

摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

公开(公告)号：US08336003B2

公开(公告)日：2012-12-18

申请号：US12708570

申请日：2010-02-19

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

IPC分类号： G06F17/50

CPC分类号： G03F1/38 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/00 ,  G03F7/0002

摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

公开(公告)号：US20110209106A1

公开(公告)日：2011-08-25

申请号：US12708570

申请日：2010-02-19

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

IPC分类号： G06F17/50

CPC分类号： G03F1/38 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/00 ,  G03F7/0002

摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

公开(公告)号：US20120331428A1

公开(公告)日：2012-12-27

申请号：US13606055

申请日：2012-09-07

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Jed Walter Pitera ,  Charles Thomas Rettner ,  Daniel Paul Sanders ,  Da Yang

IPC分类号： G06F17/50

CPC分类号： G03F1/38 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/00 ,  G03F7/0002

摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

摘要翻译： 一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身 装配模式 所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

公开(公告)号：US08114306B2

公开(公告)日：2012-02-14

申请号：US12470760

申请日：2009-05-22

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

IPC分类号： H01L21/31 ,  H01L21/469 ,  B32B3/00 ,  B05D3/00

CPC分类号： H01L21/76816 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10S438/947

摘要： Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.

摘要翻译： 本文描述了涉及嵌段共聚物的自组装的方法，其中从具有目标CD（临界尺寸）的开口（在一个或多个衬底中）开始，以规则阵列或任意布置形成孔。 显着地，形成的孔的平均直径的百分比变化小于初始开口的平均直径的变化百分比。 形成的孔（或通孔）可以被转移到下面的基底中，然后这些孔可以用诸如金属导体的材料回填。 本发明的优选方面能够创建具有更紧的间距和更好的CD均匀性的通孔，即使在22nm以下的技术节点。

公开(公告)号：US20100297847A1

公开(公告)日：2010-11-25

申请号：US12470760

申请日：2009-05-22

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders ,  Da Yang

IPC分类号： H01L21/465

CPC分类号： H01L21/76816 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10S438/947

摘要： Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.

摘要翻译： 本文描述了涉及嵌段共聚物的自组装的方法，其中从具有目标CD（临界尺寸）的开口（在一个或多个衬底中）开始，以规则阵列或任意布置形成孔。 显着地，形成的孔的平均直径的百分比变化小于初始开口的平均直径的变化百分比。 形成的孔（或通孔）可以被转移到下面的基底中，然后这些孔可以用诸如金属导体的材料回填。 本发明的优选方面能够创建具有更紧的间距和更好的CD均匀性的通孔，即使在22nm以下的技术节点处。

公开(公告)号：US08398868B2

公开(公告)日：2013-03-19

申请号：US12468391

申请日：2009-05-19

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/312

CPC分类号： B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

摘要翻译： 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：US20100294740A1

公开(公告)日：2010-11-25

申请号：US12468391

申请日：2009-05-19

申请人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

发明人： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

IPC分类号： H01B13/00 ,  B05D7/24 ,  B05D3/00

CPC分类号： B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

摘要翻译： 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：US08227180B2

公开(公告)日：2012-07-24

申请号：US13158901

申请日：2011-06-13

申请人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/00 ,  G03F7/028 ,  G03F7/11 ,  G03F7/20 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US20090208865A1

公开(公告)日：2009-08-20

申请号：US12033303

申请日：2008-02-19

申请人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/004 ,  G03F7/00

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。