公开(公告)号：US20160012782A1

公开(公告)日：2016-01-14

申请号：US14793106

申请日：2015-07-07

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Arichika Ishida ,  Norihiro Uemura ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

IPC: G09G3/36

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  H01L27/1288

Abstract: According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.

Abstract translation: 根据一个实施例，显示装置包括在绝缘基板上的TFT。 TFT包括栅极电极，栅电极上的绝缘层，绝缘层上的半导体层，以及各自设置成与半导体层的至少一部分接触的源电极和漏电极。 源电极和漏电极具有包括下层，中间层和上层的层压结构。 源电极和漏电极包括侧壁，其各自包括上层侧的第一锥形部分，下层侧上的第二锥形部分和附接到第二锥形部分的侧壁保护膜。 第一锥形部的锥角小于第二锥形部的锥角。

公开(公告)号：US20140307194A1

公开(公告)日：2014-10-16

申请号：US14245102

申请日：2014-04-04

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Norihiro UEMURA ,  Takeshi NODA ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78696 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract translation: 在使用第一氧化物半导体层作为沟道层的底栅极薄膜晶体管中，第一氧化物半导体层和第二半导体层包括In和O.第二氧化物半导体层的（O / In）比等于或大于 比第一氧化物半导体层的厚度厚，其厚度比第一氧化物半导体层厚。