公开(公告)号：US20100118600A1

公开(公告)日：2010-05-13

申请号：US12686168

申请日：2010-01-12

申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/16 ,  H01L41/22 ,  G06F1/18

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20090166322A1

公开(公告)日：2009-07-02

申请号：US12361575

申请日：2009-01-29

申请人： Sumio IKEGAWA ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

发明人： Sumio IKEGAWA ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

IPC分类号： B44C1/22

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

摘要翻译： 根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。 自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。 第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

公开(公告)号：US20090140358A1

公开(公告)日：2009-06-04

申请号：US12364132

申请日：2009-02-02

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

IPC分类号： H01L43/08

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

公开(公告)号：US07542248B2

公开(公告)日：2009-06-02

申请号：US11984865

申请日：2007-11-23

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  G11C11/15

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US20090080239A1

公开(公告)日：2009-03-26

申请号：US12233121

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/02 ,  G11B5/706 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

公开(公告)号：US20090080238A1

公开(公告)日：2009-03-26

申请号：US12211388

申请日：2008-09-16

申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/02 ,  H01L29/82 ,  G11C11/14 ,  G11C7/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

摘要翻译： 本发明提供一种自旋注入型的低电阻磁阻元件。 形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面 。 通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

公开(公告)号：US20080131732A1

公开(公告)日：2008-06-05

申请号：US12019743

申请日：2008-01-25

申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

公开(公告)号：US07371320B2

公开(公告)日：2008-05-13

申请号：US11008193

申请日：2004-12-10

申请人： Hiroaki Yoda ,  Satoshi Yumoto ,  Minoru Morita

发明人： Hiroaki Yoda ,  Satoshi Yumoto ,  Minoru Morita

IPC分类号： C02F1/48

CPC分类号： C02F1/488 ,  B03C1/01 ,  B03C1/032 ,  B03C1/0337 ,  B03C1/034 ,  B03C2201/18 ,  C02F1/001 ,  C02F1/5236 ,  C02F1/56 ,  C02F1/66 ,  C02F11/14 ,  C02F2301/046

摘要： A magnetic separation unit can prevent any magnetic flocs deposited on an inner wall of a water passing pipe from closing a water channel for stabilizing a magnetic separation performance and reduce cost by a small-diameter portion of the water passing pipe. The magnetic separation unit has an air-core solenoid type magnet provided around the water passing pipe guiding, from a lower side, treated water including magnetic flocs in which contaminants and magnetic particles are flocculated, a rotating disc type magnetic filter case provided above the air-core solenoid type magnet for attracting the magnetic flocs in the treated water supplied from the water passing pipe and flushing means for flushing the matrixes to which the magnetic flocs are attracted. The water passing pipe has a small-diameter pipe positioned in the air-core solenoid type magnet, and an enlarged pipe enlarged from the small-diameter pipe toward a water passing part of the rotating disc type magnetic filter case.

摘要翻译： 磁分离单元可以防止沉积在水通过管的内壁上的任何磁性絮凝物关闭水通道以稳定磁分离性能，并且通过水通过管的小直径部分降低成本。 磁分离单元具有设置在水通过管周围的空心螺线管型磁体，从下侧引导包括污染物和磁性颗粒絮凝的磁性絮凝物的处理水，设置在空气上方的旋转盘型磁性过滤器壳体 用于吸引从通水管供给的处理水中的磁絮凝物的芯螺线管型磁体和用于冲洗磁絮凝物所吸收的基体的冲洗装置。 通水管具有位于空心螺线管型磁体中的小直径管，并且从小直径管朝向旋转盘型磁性过滤器壳体的水通过部分扩大的管。

公开(公告)号：US20080088980A1

公开(公告)日：2008-04-17

申请号：US11832203

申请日：2007-08-01

申请人： Eiji KITAGAWA ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji KITAGAWA ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10S977/935

摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

摘要翻译： 磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向 电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在 所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

公开(公告)号：US20080043519A1

公开(公告)日：2008-02-21

申请号：US11829408

申请日：2007-07-27

申请人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.

摘要翻译： 当执行读取时，可以防止无意写入。 用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。