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    LOW INDIVIDUAL COLOUR THERMOPLASTIC MOLDING COMPOSITION
    64.
    发明申请
    LOW INDIVIDUAL COLOUR THERMOPLASTIC MOLDING COMPOSITION 审中-公开
    低个人颜色热塑性成型组合物

    公开(公告)号：US20090012222A1

    公开(公告)日：2009-01-08

    申请号：US12162231

    申请日：2007-01-24

    申请人： Wil Duijzings ,  Davy Roger Suwier ,  Martin Weber ,  Michel Pepers

    发明人： Wil Duijzings ,  Davy Roger Suwier ,  Martin Weber ,  Michel Pepers

    IPC分类号： C08K3/38

    CPC分类号： C08L69/00 ,  C08K3/38 ,  C08L51/04 ,  C08L55/02 ,  C08L2666/24

    摘要： A thermoplastic molding composition comprising A) 2.5 to 50 wt. % of a rubber modified styrenic resin; B) 50 to 97.5 wt. % of a polycarbonate resin; C) 0.001 to 1 wt. % of an inorganic boron compound; D) 0 to 25 wt. % of further polymer resins; and E) 0 to 45 wt. % additives, shows excellent thermal stability at high temperatures and impact resistance, and no thermal discolouration during processing.

    摘要翻译： 一种热塑性模塑组合物，其包含A）2.5至50wt。 ％的橡胶改性苯乙烯树脂; B）50〜97.5重量％ ％的聚碳酸酯树脂; C）0.001〜1重量％ ％的无机硼化合物; D）0-25重量份 ％的其他聚合物树脂; 和E）0至45wt。 ％添加剂，在高温下显示出优异的热稳定性和耐冲击性，并且在加工过程中不发生热变色。

    Polycarbonate styrene copolymer blends with improved properties
    65.
    发明授权
    Polycarbonate styrene copolymer blends with improved properties 失效
    具有改进性能的聚碳酸酯苯乙烯共聚物共混物

    公开(公告)号：US07265172B2

    公开(公告)日：2007-09-04

    申请号：US10510478

    申请日：2003-04-08

    申请人： Martin Weber ,  Xaver Hopfenspirger ,  Reinhard Jakobi ,  Walter Heckmann

    发明人： Martin Weber ,  Xaver Hopfenspirger ,  Reinhard Jakobi ,  Walter Heckmann

    IPC分类号： C08L69/00 ,  C08L51/04

    CPC分类号： C08L55/02 ,  C08F265/04 ,  C08L25/12 ,  C08L51/04 ,  C08L69/00 ,  C08L2205/035 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/04

    摘要： Thermoplastic molding composition comprising components A, B, C and D and, if appropriate, E, F, G and H, A) from 1 to 97.5% by weight of at least one aromatic polycarbonate A, B) from 1 to 97.5% by weight of at least one graft polymer B made from b1) from 40 to 80% by weight of a graft base made from an elastomeric polymer B1, b2) from 20 to 60% by weight of a graft B2 made from b21) from 60 to 95% by weight of styrene or of substituted styrenes B21 and b22) from 5 to 40% by weight of at least one unsaturated nitrile B22, C) from 1 to 97.5% by weight of at least one thermoplastic copolymer C made from c1) from 60 to 85% by weight of styrene or of substituted styrenes C1 or mixtures thereof and c2) from 15 to 40% by weight of at least one unsaturated nitrile C2, D) from 0.5 to 50% by weight of at least one copolymer D, obtainable via reaction of d1) from 5 to 95% by weight of at least one thermoplastic methacrylate polymer D1 containing at least one type of functional groups selected from epoxy, carboxy, hydroxy, anhydride and oxazoline, with d2) from 5 to 95% by weight of at least one thermoplastic polyester D2, E) from 0 to 40% by weight of at least one filler E, F) from 0 to 2% by weight of at least one organic acid F, G) from 0 to 25% by weight of at least one halogen-free phosphorus compound G, H) from 0 to 45% by weight of other additives H.

    摘要翻译： 包含组分A，B，C和D以及如果合适的话，E，F，G和H的热塑性模塑组合物，A）1至97.5重量％的至少一种芳族聚碳酸酯A，B）1至97.5％ 由b1）制成的至少一种接枝聚合物B的重量为40〜80重量％的由弹性体聚合物B1制成的接枝基料，b2）20〜60重量％的由b21制得的接枝体B2从60〜 95重量％的苯乙烯或取代的苯乙烯B21和b22）5至40重量％的至少一种不饱和腈B22，C）1至97.5重量％的至少一种由c1）制成的热塑性共聚物C 60至85重量％的苯乙烯或取代的苯乙烯或其混合物，c2）15至40重量％的至少一种不饱和腈C2，D）0.5至50重量％的至少一种共聚物D， 可通过d1）5至95重量％的至少一种含至少一种选自以下的官能团的热塑性甲基丙烯酸酯聚合物D1 环氧基，羧基，羟基，酸酐和恶唑啉，d2）5至95重量％的至少一种热塑性聚酯D2，E）0至40重量％的至少一种填料E，F）0至 2重量％的至少一种有机酸F，G）0至25重量％的至少一种无卤素磷化合物G，H）0至45重量％的其它添加剂H.

    Thermoplastic Molding Masses Made From Styrol Copolymers And Polyamides
    66.
    发明申请
    Thermoplastic Molding Masses Made From Styrol Copolymers And Polyamides 审中-公开
    由苯乙烯共聚物和聚酰胺制成的热塑性成型体

    公开(公告)号：US20070161746A1

    公开(公告)日：2007-07-12

    申请号：US10586384

    申请日：2005-01-15

    申请人： Martin Weber

    发明人： Martin Weber

    IPC分类号： C08L77/00

    CPC分类号： C08L55/02 ,  C08F279/02 ,  C08F279/04 ,  C08L25/08 ,  C08L25/10 ,  C08L25/12 ,  C08L25/14 ,  C08L51/003 ,  C08L51/04 ,  C08L77/00 ,  C08L77/02 ,  C08L77/06 ,  C08L2205/02 ,  C08L2205/03 ,  C08L2666/02 ,  C08L51/00 ,  C08L2666/14 ,  C08L2666/24

    摘要： Thermoplastic molding compositions composed of A) a polyamide having amino or carboxy end groups or a mixture of these end groups, B) a mixture composed of at least two graft copolymers, each comprising a rubber as graft base and a graft based on an unsaturated monomer, where these differ at least 5% by weight from one another in their rubber contents, C) a rubber-free copolymer, comprising c1) at least 30% by weight, based on the total weight of all of the units present in C), of units which derive from a vinylaromatic monomer, c2) units which derive from a monomer which comprises a functional group which can react with the end groups of the polyamide A), and c3) units which derive from a monomer which comprises no functional groups which react with the end groups of the polyamide A), and also moreover, if desired, D) a rubber-free matrix polymer, E) a low-molecular-weight compound which comprises a dicarboxylic anhydride group, and F) an additive, or a mixture of various additives.

    摘要翻译： 由A）具有氨基或羧基端基的聚酰胺或这些端基的混合物组成的热塑性模塑组合物，B）由至少两种接枝共聚物组成的混合物，每种接枝共聚物包含作为接枝基质的橡胶和基于不饱和单体的接枝 ，其中它们的橡胶含量彼此不同至少5重量％，C）无橡胶共聚物，其包含c1）至少30重量％，基于C）中存在的所有单元的总重量， 来自乙烯基芳族单体的单元，c2）衍生自包含可与聚酰胺A的端基反应的官能团的单体的单元）和c3）衍生自不含官能团的单体的单元 其与聚酰胺A）的端基反应，并且如果需要，D）无橡胶基质聚合物E）包含二羧酸酐基团的低分子量化合物和F）添加剂， 或各种添加剂的混合物。

    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
    67.
    发明申请
    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
    用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置

    公开(公告)号：US20060292890A1

    公开(公告)日：2006-12-28

    申请号：US11513701

    申请日：2006-08-31

    申请人： Wilfried Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    发明人： Wilfried Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    IPC分类号： H01L21/31

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1068

    摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

    摘要翻译： 通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到 通过针对生长前沿的热通量的增长前沿。 该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm 3的硅单晶， -3和硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。 半导体晶片与单晶分离。 这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。

    Process for producing a silicon single crystal which is doped with highly volatile foreign substances
    68.
    发明授权
    Process for producing a silicon single crystal which is doped with highly volatile foreign substances 有权
    用于制造掺杂有高挥发性异物的硅单晶的方法

    公开(公告)号：US07070649B2

    公开(公告)日：2006-07-04

    申请号：US10690415

    申请日：2003-10-21

    申请人： Martin Weber ,  Peter Vilzmann ,  Erich Gmeilbauer ,  Robert Vorbuchner

    发明人： Martin Weber ,  Peter Vilzmann ,  Erich Gmeilbauer ,  Robert Vorbuchner

    IPC分类号： C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/00

    摘要： A process for producing a doped silicon single crystal, comprising after-doping the melt during the pulling process with a quantity of volatile dopant ΔN(t), calculated according to the equation ΔN(t)=N0−N(t)=N0·(1−e−λa·t) or according to the approximation equation ΔN(t)=N0·λa·t where λa is an evaporation coefficient which describes process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and calculated according to the equation R(t)=R0·eλa·t, where R0 is a starting resistivity and the further single crystal is pulled under the same process conditions without being after-doped with the foreign substance.

    摘要翻译： 一种制造掺杂硅单晶的方法，包括在拉伸过程中用一定量的挥发性掺杂剂ΔN（t）对熔体进行后掺杂，根据方程式<？in-line-formula description =“In-Line Formulas “end =”lead“？> DeltaN（t）= N 0 -N（t）= N 0（1-e-O） > a .t ）<？in-line-formula description =“In-line Formulas”end =“tail”？>或根据 到近似方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaN（t）= N <？in-line-formula description =“In-line Formulas”end =“tail”？>其中lambda是一个蒸发系数，它描述异物的过程特定的蒸发行为， 已经根据方程式<？in-line-formula description =“In-line Formulas”end =“lead”？> R（t）= 1）测量并计算另一单晶的电阻分布R（t） R＆lt; 0＆lt;＆lt; SU > .t ，<？in-line-formula description =“In-line Formulas”end =“ 尾“→其中R 0 <0>是起始电阻率，并且在相同的工艺条件下拉伸另外的单晶而不用异物进行后掺杂。

    Device and method for the treatment of substrates in a fluid container
    69.
    发明授权
    Device and method for the treatment of substrates in a fluid container 失效
    用于处理流体容器中的基底的装置和方法

    公开(公告)号：US06647641B1

    公开(公告)日：2003-11-18

    申请号：US09367683

    申请日：1999-12-03

    申请人： Martin Weber

    发明人： Martin Weber

    IPC分类号： F26B300

    CPC分类号： H01L21/67057 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/138

    摘要： A device for the treatment of substrates has a fluid container and two substrate transport devices positionable above the fluid container. Each substrate transport device is a hood for receiving multiple substrates. Each substrate transport device has at least one substrate support device having a first position for locking the substrates and a second position for releasing the substrates. The substrate transport devices are rigidly connected to one another and linearly movable for alternatingly positioning one of the substrate transport devices above the fluid container.

    摘要翻译： 用于处理基底的装置具有流体容器和可定位在流体容器上方的两个基底输送装置。 每个基板输送装置是用于接收多个基板的罩。 每个基板输送装置具有至少一个基板支撑装置，其具有用于锁定基板的第一位置和用于释放基板的第二位置。 基板输送装置彼此刚性地连接并且可线性地移动，以便将流体容器上方的基板输送装置之一交替地定位。

    Single-crystal rod and process for its production
    70.
    发明授权
    Single-crystal rod and process for its production 有权
    单晶棒及其生产过程

    公开(公告)号：US06461582B2

    公开(公告)日：2002-10-08

    申请号：US09834571

    申请日：2001-04-13

    申请人： Martin Weber ,  Erich Gmeilbauer ,  Robert Vorbuchner ,  Alfred Miller

    发明人： Martin Weber ,  Erich Gmeilbauer ,  Robert Vorbuchner ,  Alfred Miller

    IPC分类号： C01B2326

    CPC分类号： C30B29/06 ,  C30B15/22

    摘要： A single-crystal rod, obtained using CZ crucible pulling, has a crystal cone and a cylindrical single-crystal rod, and the crystal cone has an apex angle of 30° to 90°. There is also a process for producing dislocation-free single-crystal rods using CZ crucible pulling in which a seed crystal is immersed in a melt and is pulled out again, and a cone with an apex angle of from 30° to 90° is pulled.

    摘要翻译： 使用CZ坩埚拉拔获得的单晶棒具有晶体锥形和圆柱形单晶棒，并且晶体锥体的顶角为30°至90°。 还有一种使用CZ坩埚拉制制造无位错单晶棒的方法，其中将晶种浸入熔体中并再次拉出，并且拉拔顶角为30°至90°的锥体 。