公开(公告)号：US20100155787A1

公开(公告)日：2010-06-24

申请号：US12716488

申请日：2010-03-03

申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

IPC分类号： H01L27/148

CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

摘要： A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.

摘要翻译： 在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一导电类型的第三半导体区域的光电转换单元 以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。 此外，具有栅电极的放大MOS晶体管连接到第四半导体区域，并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方，并且与绝缘体 在转移MOS晶体管的栅极电极下方。

公开(公告)号：US07679658B2

公开(公告)日：2010-03-16

申请号：US11564567

申请日：2006-11-29

申请人： Katsuhito Sakurai ,  Masaru Fujimura ,  Masanori Ogura

发明人： Katsuhito Sakurai ,  Masaru Fujimura ,  Masanori Ogura

IPC分类号： H04N9/64

CPC分类号： H04N5/374 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/3742 ,  H04N5/378

摘要： It is intended to obtain a high quality image which is not affected by the fluctuation of dark outputs, and pixels having a specifically large dark output, called defects, and has no lateral line etc. A solid-state image pickup apparatus including: an aperture pixel region which accumulates and outputs the electric charges generated depending on incident light; a light shielded optical black region; a black reference pixel region in which no impurity region for accumulating electric charges is formed; and level shifting means which shifts the reference level of the output signals of the black reference pixel region with respect to the reference levels of the output signals of the aperture pixel region and the optical black region, is provided.

摘要翻译： 旨在获得不受暗输出的波动影响的高质量图像，以及具有特别大的暗输出的像素，称为缺陷，并且没有侧线等。固态图像拾取装置包括：孔径 像素区域，其累积并输出根据入射光产生的电荷; 遮光光学黑色区域; 形成用于积蓄电荷的杂质区域的黑色参照像素区域; 并且提供了相对于开口像素区域和光学黑色区域的输出信号的参考电平偏移黑色参考像素区域的输出信号的参考电平的电平移位装置。

公开(公告)号：US07576788B2

公开(公告)日：2009-08-18

申请号：US11119932

申请日：2005-05-03

申请人： Katsuhito Sakurai ,  Toru Koizumi ,  Fumihiro Inui ,  Hiroki Hiyama ,  Masaru Fujimura ,  Tomoko Eguchi

发明人： Katsuhito Sakurai ,  Toru Koizumi ,  Fumihiro Inui ,  Hiroki Hiyama ,  Masaru Fujimura ,  Tomoko Eguchi

IPC分类号： H04N3/14

CPC分类号： H04N5/363 ,  H04N5/3575 ,  H04N5/378

摘要： The output voltages of dark pixels and optical black (OB) pixels are different between a row including a pixel which receives strong light and another row. An image formed upon receiving a strong light spot suffers whitish bands on the right and left of the spot. To solve this problem, this invention provides an image pickup apparatus including a pixel containing a photodiode which converts a photo-signal into a signal charge and accumulates the signal charge and an amplifier transistor which amplifies the signal charge accumulated in the photodiode, and a control element adapted to limit the output of the amplifier transistor so as to prevent the output from falling to below a predetermined voltage.

摘要翻译： 暗像素和光学黑（OB）像素的输出电压在包括接收强光的像素和另一行的行之间是不同的。 在接收到强光斑后形成的图像在斑点的右侧和左侧发生白色带。 为了解决这个问题，本发明提供了一种图像拾取装置，它包括一个像素，它包含一个将光信号转换成信号电荷并累积信号电荷的光电二极管，放大晶体管放大在光电二极管中累积的信号电荷， 适于限制放大器晶体管的输出的元件，以防止输出降至低于预定电压。

公开(公告)号：US07545426B2

公开(公告)日：2009-06-09

申请号：US11205049

申请日：2005-08-17

申请人： Hiroki Hiyama ,  Toru Koizumi ,  Katsuhito Sakurai ,  Fumihiro Inui ,  Masaru Fujimura ,  Tomoko Eguchi ,  Masanori Ogura

发明人： Hiroki Hiyama ,  Toru Koizumi ,  Katsuhito Sakurai ,  Fumihiro Inui ,  Masaru Fujimura ,  Tomoko Eguchi ,  Masanori Ogura

IPC分类号： H04N5/335

CPC分类号： H04N5/3742 ,  H04N5/376

摘要： There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

摘要翻译： 提供了一种图像拾取装置，包括多个像素，每个像素包括将入射光转换成电信号并累积电信号的光电转换单元，放大并输出来自光电转换单元的信号的放大器晶体管，转移晶体管 其将累积在光电转换单元中的电信号传送到放大器晶体管，以及执行预定处理的处理晶体管，以及控制电路，其设置提供给转移晶体管的控制电极的信号电平以关闭转移 晶体管低于提供给处理晶体管的控制电极的信号电平，以便关闭处理晶体管。

公开(公告)号：US07531885B2

公开(公告)日：2009-05-12

申请号：US11608073

申请日：2006-12-07

申请人： Akira Okita ,  Katsuhito Sakurai ,  Hiroki Hiyama ,  Hideaki Takada

发明人： Akira Okita ,  Katsuhito Sakurai ,  Hiroki Hiyama ,  Hideaki Takada

IPC分类号： H01L29/72

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14643

摘要： A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photodiode for converting light into a signal charge, a first semiconductor region having a first conductivity type, a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photodiode into a signal voltage, the second semiconductor region being formed in the first semiconductor region, and an electrode formed above the first semiconductor region through an insulating film and having an effect of increasing a concentration of majority carriers in the first semiconductor region, in which the electrode is not formed above a depletion region formed from the second semiconductor region.

摘要翻译： 本发明的主要目的在于提供一种在浮动扩散区域中漏电流较小的光电转换装置。 为了获得上述目的，根据本发明的光电转换装置包括用于将光转换为信号电荷的光电二极管，具有第一导电类型的第一半导体区，由具有第一导电类型的第二半导体区形成的浮动扩散区， 第二导电类型，用于将由光电二极管产生的信号电荷转换为信号电压，第二半导体区域形成在第一半导体区域中，以及通过绝缘膜形成在第一半导体区域上方并具有增加浓度的效果的电极 的第一半导体区域中的多数载流子，其中电极不形成在由第二半导体区域形成的耗尽区上方。

公开(公告)号：US07460164B2

公开(公告)日：2008-12-02

申请号：US11040389

申请日：2005-01-21

申请人： Hiroki Hyama ,  Akira Okita ,  Hideaki Takada ,  Katsuhito Sakurai

发明人： Hiroki Hyama ,  Akira Okita ,  Hideaki Takada ,  Katsuhito Sakurai

IPC分类号： H04N5/335 ,  H04N5/217 ,  H01L31/062 ,  H01L27/00

CPC分类号： H04N5/378 ,  H04N5/361

摘要： An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier. The image capture device further includes a plurality of third capacitor elements configured to hold signals from the differential amplifiers of the plurality of processing circuits and to limit an output frequency band of each differential amplifier, and a horizontal output line for sequentially outputting signals from the plurality of third capacitor elements.

摘要翻译： 图像捕获装置包括用于捕获对象图像的多个图像捕获元件，用于从多个图像捕获元件中读取信号的多个垂直输出线以及多个处理电路。 每个处理电路包括第一电容器元件，其具有连接到所述多个垂直输出线之一的第一电极，差分放大器，具有连接到所述第一电容器元件的第二电极的第一输入端子，连接在所述第一电容器元件之间的第二电容器元件 输入端子和差分放大器的输出端子，以及被配置为控制差分放大器的第一输入端子和输出端子之间的导通的第一开关。 图像捕获装置还包括多个第三电容器元件，其被配置为保持来自多个处理电路的差分放大器的信号并限制每个差分放大器的输出频带，以及用于顺序地输出来自多个处理电路的信号的水平输出线 的第三电容器元件。

公开(公告)号：US20070257281A1

公开(公告)日：2007-11-08

申请号：US11773731

申请日：2007-07-05

申请人： TORU KOIZUMI ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

发明人： TORU KOIZUMI ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tesunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

IPC分类号： H01L31/06

CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

摘要： MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.

摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元， 设置在第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管，第二导电类型的第四半导体区域和设置在第一半导体上的绝缘膜上的栅电极 区域，以将电荷载体从第二半导体区域转移到第四半导体区域。 光电转换单元和转移MOS晶体管设置在基板上。 第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域，并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在 在第四半导体区域中的栅电极。 转移MOS晶体管的漏极包括第四和第六半导体区域，并且偏置被施加到漏极，并且在从第二半导体区域读出电荷载流子期间，第五半导体区域被耗尽。

公开(公告)号：US20070085110A1

公开(公告)日：2007-04-19

申请号：US11608073

申请日：2006-12-07

申请人： AKIRA OKITA ,  Katsuhito Sakurai ,  Hiroki Hiyama ,  Hideaki Takada

发明人： AKIRA OKITA ,  Katsuhito Sakurai ,  Hiroki Hiyama ,  Hideaki Takada

IPC分类号： H01L29/768

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14643

摘要： A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photodiode for converting light into a signal charge, a first semiconductor region having a first conductivity type, a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photodiode into a signal voltage, the second semiconductor region being formed in the first semiconductor region, and an electrode formed above the first semiconductor region through an insulating film and having an effect of increasing a concentration of majority carriers in the first semiconductor region, in which the electrode is not formed above a depletion region formed from the second semiconductor region.

摘要翻译： 本发明的主要目的在于提供一种在浮动扩散区域中漏电流较小的光电转换装置。 为了获得上述目的，根据本发明的光电转换装置包括用于将光转换为信号电荷的光电二极管，具有第一导电类型的第一半导体区，由具有第一导电类型的第二半导体区形成的浮动扩散区， 第二导电类型，用于将由光电二极管产生的信号电荷转换为信号电压，第二半导体区域形成在第一半导体区域中，以及通过绝缘膜形成在第一半导体区域上方并具有增加浓度的效果的电极 的第一半导体区域中的多数载流子，其中电极不形成在由第二半导体区域形成的耗尽区上方。

公开(公告)号：US20060157759A1

公开(公告)日：2006-07-20

申请号：US11326416

申请日：2006-01-06

申请人： Akira Okita ,  Toru Koizumi ,  Isamu Ueno ,  Katsuhito Sakurai

发明人： Akira Okita ,  Toru Koizumi ,  Isamu Ueno ,  Katsuhito Sakurai

IPC分类号： H01L31/113

CPC分类号： H04N3/155 ,  H01L27/14603 ,  H04N5/235 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3591 ,  H04N5/378

摘要： An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.

摘要翻译： 一种图像拾取装置，其中从光电转换单元溢出一段光电产生和累积载流子的载流子的一部分可以流入浮动扩散区域，并且像素信号生成单元根据载流子生成像素信号 存储在光电转换单元中并且已经溢出到浮动扩散区域中的载流子。 动态范围的扩大和图像质量的提高可以通过控制流入浮动扩散区域的载流子与从这种光电转换单元溢出的载流子的比例高精度地提供。

公开(公告)号：US06987685B2

公开(公告)日：2006-01-17

申请号：US10928403

申请日：2004-08-30

申请人： Toru Koizumi ,  Masaru Fujimura ,  Katsuhito Sakurai

发明人： Toru Koizumi ,  Masaru Fujimura ,  Katsuhito Sakurai

IPC分类号： G11C5/06

CPC分类号： H04N5/378

摘要： The present invention is mainly aimed at obtaining excellent sensor output free from periodic fixed pattern noise even if the pieces of holding capacity are converted into blocks, and the specific solution unit is described below. The signal readout unit includes: a line memory; first switches each connected to a holding capacity; a first common signal line comprising eight switches connected together; and second switches for connecting the first common signal line to the second common signal line. The control unit controls opening/closing of both switches. Between the electrode of the second switch and the second common signal line, there is provided outgoing wiring. From the control unit, control wiring a1. . . , b1. . . is connected to the first switch. To each wiring a1. . . , b1. . . , a pair of a positive signal and an anti-signal in which the logical level has been reversed with respect to each other is supplied respectively. Each wiring a1. . . , b1. . . is arranged so as to be line-symmetric with respect to the outgoing wiring.

摘要翻译： 本发明主要是为了获得没有周期性固定模式噪声的良好的传感器输出，即使这些保持容量被转换成块，并且具体的解决方案单元在下面描述。 信号读出单元包括：行存储器; 每个连接到保持能力的第一个开关; 第一公共信号线包括连接在一起的八个开关; 以及用于将第一公共信号线连接到第二公共信号线的第二开关。 控制单元控制两个开关的打开/关闭。 在第二开关的电极和第二公共信号线之间设置输出布线。 从控制单元，控制配线a1。 。 。 ，b1。 。 。 连接到第一开关。 对每个接线a1。 。 。 ，b1。 。 。 分别提供逻辑电平相对于彼此反转的一对正信号和反信号。 各布线a1。 。 。 ，b1。 。 。 被布置成相对于输出布线线对称。