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    Optical sensor, solid-state imaging device, and operating method of solid-state imaging device
    61.
    发明授权
    Optical sensor, solid-state imaging device, and operating method of solid-state imaging device 有权
    光学传感器，固态成像装置和固态成像装置的操作方法

    公开(公告)号：US07821560B2

    公开(公告)日：2010-10-26

    申请号：US11887916

    申请日：2006-04-06

    申请人： Shigetoshi Sugawa ,  Nana Akahane

    发明人： Shigetoshi Sugawa ,  Nana Akahane

    IPC分类号： H04N5/335 ,  H04N3/14

    CPC分类号： H04N5/35572 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14656 ,  H04N5/3559 ,  H04N5/374 ,  H04N5/37452

    摘要： In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photo diode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range.

    摘要翻译： 在诸如光学传感器或具有用于接收光并产生光电荷的光电二极管的固态成像装置的光学装置和用于传送光电荷的转移晶体管（或溢流栅极）中，从光电二极管 在存储操作中通过传输晶体管或溢出门将多个存储电容元件存储，从而获得适于保持高灵敏度和高S / N比并具有宽动态范围的光学装置。

    Solid-state imaging device, optical sensor and method of operating solid-state imaging device
    62.
    发明授权
    Solid-state imaging device, optical sensor and method of operating solid-state imaging device 有权
    固态成像装置，光学传感器和操作固态成像装置的方法

    公开(公告)号：US07800673B2

    公开(公告)日：2010-09-21

    申请号：US10592590

    申请日：2005-04-12

    申请人： Shigetoshi Sugawa ,  Satoru Adachi ,  Kyoichi Yahata ,  Tatsuya Terada

    发明人： Shigetoshi Sugawa ,  Satoru Adachi ,  Kyoichi Yahata ,  Tatsuya Terada

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3559 ,  H01L27/14609 ,  H04N5/2355 ,  H04N5/3591

    摘要： A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element CS coupled to the photodiode PD through a transfer transistor Tr1 for accumulating the photoelectric charges overflowing from the photodiode PD. The storage capacitor element CS is structured to accumulate the photoelectric charges overflowing from the photodiode PD in a storage-capacitor-element accumulation period TCS that is set to be a period at a predetermined ratio with respect to an accumulation period of the photodiode PD.

    摘要翻译： 一种固态成像装置和光学传感器，其可以在保持高S / N比的高灵敏度的同时增强宽动态范围，以及操作固态成像装置以增强宽动态范围同时保持 公开了具有高S / N比的高灵敏度。 集成像素阵列具有这样的结构，其中每个像素包括用于接收光并且产生和累积光电电荷的光电二极管PD和通过传输晶体管Tr1耦合到光电二极管PD的存储电容器元件CS，用于累积从光电二极管PD溢出的光电电荷 。 存储电容器元件CS被构造为在相对于光电二极管PD的累积周期被设置为以预定比率的周期的存储电容元件累积周期TCS中累积从光电二极管PD溢出的光电电荷。

    SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME
    63.
    发明申请
    SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME 有权
    固态图像传感器及其驱动方法

    公开(公告)号：US20100188538A1

    公开(公告)日：2010-07-29

    申请号：US12676505

    申请日：2008-09-04

    申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

    发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

    IPC分类号： H04N5/335

    CPC分类号： H04N5/35572 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/3742 ,  H04N5/37452 ,  H04N5/378

    摘要： An independent pixel output line (14) is provided for each of two-dimensionally arranged pixels (10) within a pixel area (2a). A plurality of memory sections are connected to each pixel output line (14). In a continuous reading mode, photocharge storage is simultaneously performed at all the pixels, and signals are collectively transferred from the pixels (10) through the pixel output lines (14) to the memory sections, after which the signals held in the memory sections are sequentially read and outputted. In a burst reading mode, the operations of simultaneously storing photocharges at all the pixels and collectively transferring signals from each pixel (10) through the pixel output line (14) to the memory sections are sequentially performed for each of the memory sections to hold signals corresponding to a plurality of frames. When a imaging halt command is given, the holding of new signals is halted, and a plurality of frames of image signals held in the memory sections at that point in time are sequentially read and outputted. Thus, both an ultrahigh-speed imaging operation with a limitation on the number of frames and an imaging mode that is rather slow but has no limitation on the number of frames can be performed.

    摘要翻译： 为像素区域（2a）内的二维排列的像素（10）中的每一个提供独立的像素输出线（14）。 多个存储器部分连接到每个像素输出线（14）。 在连续读取模式下，在所有像素处同时执行光电荷存储，并且将信号从像素（10）通过像素输出线（14）共同转移到存储器部分，之后保存在存储器部分中的信号为 依次读取并输出。 在突发读取模式下，对于每个存储器部分，顺序地执行将所有像素同时存储光电荷并将每个像素（10）的信号通过像素输出线（14）共同传送到存储器部分的操作，以保持信号 对应于多个帧。 当给出成像暂停命令时，停止新信号的保持，并且顺序读取并输出在该时间点保持在存储器部分中的多个图像信号帧。 因此，可以执行具有对帧数量的限制的超高速成像操作和相当慢但对帧数量没有限制的成像模式。

    SOLID-STATE IMAGE SENSOR AND METHOD FOR PRODUCING THE SAME
    64.
    发明申请
    SOLID-STATE IMAGE SENSOR AND METHOD FOR PRODUCING THE SAME 有权
    固态图像传感器及其制造方法

    公开(公告)号：US20100176423A1

    公开(公告)日：2010-07-15

    申请号：US12676520

    申请日：2008-09-04

    申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

    发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

    IPC分类号： H01L31/14 ,  H01L31/18 ,  H01L31/0352

    CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/378

    摘要： A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.

    摘要翻译： 基本上在嵌入式光电二极管（31）的光接收表面的中心处形成浮动扩散（331），其中传输晶体管（32）的栅电极围绕浮动扩散。 p +型半导体区域，n型半导体区域或p阱区域中的杂质的浓度（或深度）以倾斜形式改变，使得当从圆周向中心倾斜的电位梯度当 适当的偏置电压施加到pn结。 由入射光产生的光电荷沿电势梯度快速移动到中心。 即使在光电荷存储时间短的情况下，由于从光电二极管（31）的周边到浮动扩散（331）的最大移动距离，也可以有效地收集光电荷。 因此，有效地利用由光电二极管（31）产生的光电荷，从而提高检测灵敏度。

    Complementary MIS device
    66.
    发明授权
    Complementary MIS device 失效
    互补MIS设备

    公开(公告)号：US07566936B2

    公开(公告)日：2009-07-28

    申请号：US11606181

    申请日：2006-11-30

    申请人： Tadahiro Ohmi ,  Koji Kotani ,  Shigetoshi Sugawa

    发明人： Tadahiro Ohmi ,  Koji Kotani ,  Shigetoshi Sugawa

    IPC分类号： H01L29/76

    CPC分类号： H01L29/045 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/66795 ,  H01L29/7851

    摘要： A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

    摘要翻译： CMOS器件包括具有形成在硅衬底（100）表面上并具有不同晶体表面的结构的p沟道MOS晶体管和n沟道MOS晶体管，形成在这种结构上的高质量栅极绝缘膜 通过微波等离子体处理和形成在其上的栅电极，其中上述结构的尺寸和形状被设置为使得载流子迁移率在p沟道MOS晶体管和n沟道MOS晶体管之间平衡。

    Low noise amplifier
    68.
    发明申请
    Low noise amplifier 审中-公开
    低噪声放大器

    公开(公告)号：US20070105523A1

    公开(公告)日：2007-05-10

    申请号：US10560703

    申请日：2004-06-11

    申请人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

    发明人： Takefumi Nishimuta ,  Hiroshi Miyagi ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto

    IPC分类号： H04B1/10 ,  H04B1/28 ,  H04B1/16

    CPC分类号： H01L21/82385 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/785 ,  H03F1/26 ,  H03F2200/372 ,  H03G1/0029 ,  H03G1/007

    摘要： A low noise amplifier is assumed to comprise an MIS transistor and to amplify an input signal keeping noise at a low level, and the MIS transistor comprises a semiconductor substrate for comprising a first crystal plane as a principal plane, a semiconductor structure, formed as a part of the semiconductor substrate, for comprising a pair of sidewall planes defined by the second crystal plane different from the first crystal plane and a top plane defined by the third crystal plane different from the second crystal plane, a gate insulator of uniform thickness covering the principal plane, the sidewall planes and the top plane, a gate electrode for continuously covering the principal plane, the sidewall planes and the top plane on top of the gate insulator, and a single conductivity type diffusion area formed in the region to either side of the gate electrode in the semiconductor substrate and the semiconductor structure and continuously extending along the principal plane, the sidewall planes and the top plane. Such a configuration allows significant reduction of the 1/f noise and the signal distortion applied to an output signal by the low noise amplifier and therefore a circuit for compensating for the reduction of the amplitude is no longer of necessity, allowing reduction in size.

    摘要翻译： 假设低噪声放大器包括MIS晶体管并且将保持噪声保持在低电平的输入信号放大，并且MIS晶体管包括用于包括第一晶面作为主平面的半导体衬底，形成为 所述半导体衬底的一部分包括由不同于所述第一晶体面的所述第二晶体面限定的一对侧壁平面和由与所述第二晶体面不同的所述第三晶体面限定的顶面，覆盖所述半导体衬底的均匀厚度的栅极绝缘体 主平面，侧壁平面和顶面，用于连续覆盖主平面，侧壁平面和栅极绝缘体顶部的顶面的栅极，以及在该区域中形成的单一导电型扩散区域 半导体衬底中的栅电极和半导体结构，并且沿着主平面连续延伸，侧壁p 车道和顶层飞机。 这样的配置允许显着降低由低噪声放大器施加到输出信号的1 / f噪声和信号失真，因此不再需要用于补偿幅度减小的电路，从而允许尺寸减小。