摘要:
A positive resist composition comprising (A) a fluorine group-containing resin, which has a structure substituted with a fluorine atom in the main chain and/or side chain of polymer skeleton and a group that is decomposed by the action of an acid to increase solubility in an alkali developer and (B) an acid generator capable of generating an acid upon irradiation of an actinic ray or radiation, and the acid generator of (B) is a compound selected from a sulfonium salt containing no aromatic ring and a compound having a phenacylsulfonium salt structure.
摘要:
A positive resist composition comprising a polymer capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin comprises repeating units containing at least two special types of acetal structures separately, a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and a solvent.
摘要:
A positive resist composition comprising a polymer capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin comprises repeating units containing at least two special types of acetal structures separately, a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and a solvent.
摘要:
The photosensitive resin composition of the present invention is an excellent photosensitive resin composition: exhibiting significant transmissibility at the use of an exposure light source of 160 nm or less, more specifically F2 excimer laser light, where line edge roughness and development time dependence are small and a problem of footing formation is improved; and comprising a resin which decomposes by an action of acid to increase the solubility in alkali developer, in which the resin contains a specific repeat unit; a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, in which the compound includes at least two kinds of compounds selected from the group consisting of specific compounds (B1), (B2), (B3) and (B4).
摘要:
A positive photoresist composition containing: (A) a resin which contains at least one of a repeating unit represented by the formula (IA) defiend herein and a repeating unit represented by the formula (IB) defined herein, and is decomposed by an action of an acid and shows an increase in a solubility in an alkali developer; and (B) as compounds capable of generating an acid upon irradiation with one of an actinic ray and a radiation, at least two compounds selected from the compounds (B1), (B2), (B3) and (B4) as defiend herein.
摘要:
A positive-working resist composition comprising (A1) a resin containing a repeating unit represented by the specific general formula, wherein the resin increases the solubility in an alkali developing solution by the action of an acid.
摘要:
A photosensitive composition comprises (A) a specific compound, which is excellent in sensitivity, resolution, and defocus latitude (DOF), and a pattern-forming method using the photosensitive composition is provided.
摘要:
The photosensitive resin composition comprising: (A) a resin containing (A1) a repeating unit having at least two groups represented by the specific general formula; and (B) a compound capable of generating an acid by the action with one of an actinic ray and a radiation.
摘要:
A resist composition comprising (A) an acid generator represented by formula (1): wherein S1 to S8 each independently represents a substituent; a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2; X represents a single bond or a divalent linking group; R1 and R2 each independently represents a hydrogen atom or a substituent, and R1 and R2 may combine with each other to represent a single bond or a divalent linking group; and Y− and Z− each independently represents an organic sulfonate anion.
摘要翻译:一种抗蚀剂组合物,其包含(A)由式(1)表示的酸发生剂:其中S 1至S 8各自独立地表示取代基; a,n,m,l,k,o,p,q和r各自独立地表示0〜2的整数。 X表示单键或二价连接基团; R 1和R 2各自独立地表示氢原子或取代基,R 1和R 2可以 彼此结合以表示单键或二价连接基团; 和Y - Z - 各自独立地表示有机磺酸根阴离子。
摘要:
The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.