公开(公告)号：US07466523B1

公开(公告)日：2008-12-16

申请号：US10617015

申请日：2003-07-10

申请人： Yingjian Chen

发明人： Yingjian Chen

IPC分类号： G11B5/39 ,  B05D3/00 ,  D01F9/12 ,  G11C11/02

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B2005/3996 ,  G11C11/54 ,  G11C13/025 ,  H01F10/3254 ,  H01F41/307 ,  Y10S977/742

摘要： Present invention discloses novel designs of carbon nanotube spin valve structures for incorporation into magnetic storage and magnetic sensing devices, such as magnetic read head, MRAM, and magnetic field sensor. One of the designs is an in-stack carbon nanotube spin valve, which consists of a ferromagnetic free layer and a ferromagnetic pinned layer. The two layers are physically separated, although they reside in parallel planes. A single or plurality of vertically aligned carbon nanotubes are in between the two layers, and in electrical contact with both. The other design is a planar carbon nanotube spin valve, which consists of ferromagnetic free layer and pinned layer in substantially the same plane. They are electrically connected by in-plane aligned carbon nanotubes, which reside in between. The methods of fabricating the magnetic read head and MRAM devices utilizing these types of carbon nanotube spin valves are also described.

摘要翻译： 本发明公开了用于结合到磁存储器中的碳纳米管自旋阀结构的新颖设计和诸如磁读头，MRAM和磁场传感器的磁感测装置。 其中一种设计是叠层碳纳米管自旋阀，其由铁磁性自由层和铁磁性钉扎层组成。 两层物理分离，尽管它们位于平行的平面上。 单个或多个垂直排列的碳纳米管位于两层之间，并与两者电接触。 另一种设计是平面碳纳米管自旋阀，其由基本相同的平面内的铁磁性自由层和钉扎层组成。 它们通过位于其间的面内对准的碳纳米管电连接。 还描述了使用这些类型的碳纳米管旋转阀制造磁读头和MRAM器件的方法。

公开(公告)号：US07375926B1

公开(公告)日：2008-05-20

申请号：US11779785

申请日：2007-07-18

申请人： Kroum S. Stoev ,  Francis H. Liu ,  Yugang Wang ,  Yingjian Chen

发明人： Kroum S. Stoev ,  Francis H. Liu ,  Yugang Wang ,  Yingjian Chen

IPC分类号： G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967

摘要： A magnetic head for writing information on a relatively-moving medium includes a first substantially flat soft magnetic pole layer and a second substantially flat pole layer with at least one coil layer between them. The pole layers are magnetically coupled in a core region and spaced by more than one micron from one other. A soft magnetic pedestal adjoins the first pole layer adjacent to a medium-facing surface of the head, and a first high magnetic saturation layer adjoins the pedestal. A second high magnetic saturation layer adjoins the second pole layer. The first high magnetic saturation layer has a first throat height and the second high magnetic saturation layer extends from the medium-facing surface only to a second throat height. The first and second throat heights are within about one and one-half microns from the medium-facing surface and are essentially equal.

摘要翻译： 用于在相对移动的介质上写入信息的磁头包括第一基本平坦的软磁极层和在它们之间具有至少一个线圈层的第二基本平坦的极性层。 磁极层磁芯耦合在磁芯区域并彼此间隔超过一微米。 软磁座与第一磁极层相邻，与磁头的介质表面相邻，第一高磁饱和层邻接基座。 第二高磁饱和层邻接第二极层。 第一高磁饱和层具有第一喉部高度，而第二高磁饱和层从介质中的表面延伸到第二喉部高度。 第一和第二喉部高度距离面向介质的表面大约一个半微米，并且基本相等。

公开(公告)号：US06906894B2

公开(公告)日：2005-06-14

申请号：US10903977

申请日：2004-07-29

申请人： Yingjian Chen ,  Xiaozhong Dang ,  Francis H. Liu ,  Kroum Stoev ,  Hai Jiang ,  Yugang Wang ,  Xizeng Shi

发明人： Yingjian Chen ,  Xiaozhong Dang ,  Francis H. Liu ,  Kroum Stoev ,  Hai Jiang ,  Yugang Wang ,  Xizeng Shi

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3109 ,  Y10T29/49034 ,  Y10T29/49044

摘要： A read/write head and method of making the same are used in a data storage system, such as a disk drive, for perpendicular magnetic recording of data. The head employs a two-layer pole design with a main pole made of sputtered high moment magnetic material, and an adjunct pole made of electroplated soft magnetic film. The main pole is used to write data onto the medium, and is formed over the write coil. The adjunct pole is substantially recessed from the air bearing surface and is formed over the main pole. The present head design significantly enhances the magnetic write field, and substantially reduces side-writing that result in accidental erasure of data in adjacent tracks on the magnetic recording medium.

摘要翻译： 读/写头及其制造方法用于数据存储系统，例如磁盘驱动器，用于数据的垂直磁记录。 头部采用双层极设计，其主极由溅射高磁矩材料制成，电极由电镀软磁膜制成。 主极用于将数据写入介质，并形成在写入线圈上。 辅助杆从空气轴承表面基本上凹入并且形成在主极上。 本头设计显着增强了磁写入场，并且基本上减少了导致磁记录介质上的相邻轨道中的数据的意外擦除的侧写。

公开(公告)号：US06801408B1

公开(公告)日：2004-10-05

申请号：US09705420

申请日：2000-11-02

申请人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

发明人： Yingjian Chen ,  Ronald A. Barr ,  Hau-Ching Tong

IPC分类号： G11B539

CPC分类号： G11B5/3916

摘要： In at least one embodiment, the apparatus of the invention is a read sensor which includes a shield, a sensor element, a read gap positioned between the shield and the sensor element, and an extra gap positioned between the shield and the sensor element and adjacent the read gap. The sensor element is positioned in a sensor layer. With the sensor element and the shield separated by only the relatively thin gap layer, high sensitivity of the sensor element is obtained. Further, by placing the relatively thick extra gap between the shield and the sensor layer and about the sensor element, the potential for shorting is minimized. The shield can be planarized to keep the read gap and the sensor layer at, and about, the sensor element substantially planar. This, in turn, results in improved control of sensor track widths and greatly reduces the potential for pooling of photoresist. In at least one embodiment, the method of the invention is for fabricating a read sensor and includes depositing a read gap onto a planarized shield, depositing an extra gap adjacent an exposed portion of the read gap, and depositing a sensor element onto the exposed portion of the first gap and adjacent to the extra gap.

摘要翻译： 在至少一个实施例中，本发明的装置是读取传感器，其包括屏蔽件，传感器元件，位于屏蔽件和传感器元件之间的读取间隙，以及位于屏蔽件和传感器元件之间的相邻的间隙 读差距。 传感器元件位于传感器层中。 传感器元件和屏蔽仅由相对薄的间隙层隔开，可以获得传感器元件的高灵敏度。 此外，通过在屏蔽和传感器层之间以及传感器元件周围放置相对较厚的额外间隙，使短路的可能性最小化。 可以将屏蔽层平坦化，以将读取的间隙和传感器层保持在传感器元件的基本平面上并且围绕其传播。 这反过来导致传感器轨道宽度的改进的控制，并且大大降低了光致抗蚀剂的集合的潜力。 在至少一个实施例中，本发明的方法用于制造读取传感器，并且包括将读取间隙沉积在平坦化屏蔽上，在读取间隙的暴露部分附近沉积额外的间隙，以及将传感器元件沉积到暴露部分上 的第一个间隙并且与额外的间隙相邻。

公开(公告)号：US06410170B1

公开(公告)日：2002-06-25

申请号：US09315863

申请日：1999-05-20

申请人： Yingjian Chen ,  Chester Qian

发明人： Yingjian Chen ,  Chester Qian

IPC分类号： G11B566

CPC分类号： G11B5/851 ,  Y10S428/90

摘要： A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias. In some embodiments, high sputtering power of about 3-4 kW with about 15-30 percent of N2 may be used to sputter FeX, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd, to provide expanding &agr;-Fe and &ggr;-Fe2N lattice constants. In some embodiments, FeXN films having resistivity values greater than about 50 &mgr;&OHgr;cm, 80 &mgr;&OHgr;cm, 100 &mgr;&OHgr;cm, 115 &mgr;&OHgr;cm, or more, for coercivity values less than about 10 Oe, 5 Oe, or 3 Oe are possible, for values of Bs greater than around 12 kG to 17 kG. Embodiments may be used for pole or shield structures in magnetic heads for data storage and retrieval apparatuses to improve high frequency performance.

摘要翻译： 本发明的优选方法提供了用于承载磁通量的改进的薄膜。 利用优选的方法，可以通过使用N 2的反应溅射沉积Fe以形成包含α-Fe和γ-Fe 4 N的薄膜来形成磁性薄膜。 利用该方法，沉积膜中的γ-Fe 4 N的相对百分比增加，以提供α-Fe和γ-Fe4N两者的扩展晶格常数。 增加的γ-Fe4N增加电阻率同时扩大晶格常数以提供更高的电阻率的矫顽力。 通过调整溅射功率，N 2气体百分比，N2的流量和衬底偏压，可以提高γ-Fe 4 N的比例以提供α-Fe和γ-Fe 4 N的扩展晶格常数。 在一些实施例中，可以使用约3-4kW的高溅射功率，约15-30％的N 2溅射FeX，其中X选自Rh，Ta，Hf，Al，Zr，Ti，Ru ，Si，Cr，V，Si，Sr，Nb，Mo，Ru和Pd，以提供扩展的α-Fe和γ-Fe2N晶格常数。 在一些实施方案中，对于低于约10Oe，5Oe或3Oe的矫顽力值，具有大于约50μOMEGAcm，80mΩEGcm，100μOMEGAcm，115μOMEGAcm或更大的电阻率值的FeXN膜是可能的， 大约12 kG到17 kG。 实施例可以用于磁头中的磁极或屏蔽结构，用于数据存储和检索装置，以改善高频性能。

公开(公告)号：US06233116B1

公开(公告)日：2001-05-15

申请号：US09192388

申请日：1998-11-13

申请人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

发明人： Yingjian Chen ,  Zhupei Shi ,  Syed Hossain

IPC分类号： G11B5147

CPC分类号： G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  G11B5/3156

摘要： The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.

摘要翻译： 本发明提供一种具有改进的层叠助焊剂携带结构和制造方法的薄膜写入头。 优选的实施例提供了叠层层：高力矩磁性材料和容易对准的高电阻率磁性材料。 在优选实施例中，容易对准的层压层通过交换耦合引起单轴各向异性，以提高高力矩材料中的单轴各向异性。 这允许通过DC磁控溅射沉积诱导的单轴各向异性，并且如果需要，还提供改进的后沉积退火。 优选将FeXN如FeRhN或其它晶体结构材料与非晶合金材料（优选Co基）如CoZrCr层压。 在优选实施例中，如上所述，可以将上极和下极结构层叠。 如果需要，这种层压结构具有比具有绝缘层压板的结构更高的Bs，并且轭和磁极尖端可以一体地形成，因为焊剂可以沿着或穿过层压层行进。 本发明的优选实施例提高了软磁性能，降低涡流，改善了硬轴对准，同时不会有害地影响结构的矫顽力，磁导率和磁致伸缩，从而改善了高频运行。

公开(公告)号：US08797680B1

公开(公告)日：2014-08-05

申请号：US13417930

申请日：2012-03-12

申请人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

发明人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording (PMR) transducer is provided. The PRM transducer includes a PMR pole having a top, a bottom, and at least one sidewall, the bottom having a bottom width, the top having a top width bigger than the bottom width. The PRM transducer further includes an intermediate layer adjacent to the at least one sidewall, a write gap on the PMR pole, the write gap including a first layer on the PMR pole, the first layer including a planarization stop layer, and a shield on the write gap.

摘要翻译： 提供垂直磁记录（PMR）传感器。 PRM传感器包括具有顶部，底部和至少一个侧壁的PMR极，底部具有底部宽度，顶部具有大于底部宽度的顶部宽度。 PRM换能器还包括与至少一个侧壁相邻的中间层，PMR极上的写入间隙，写入间隙包括PMR极上的第一层，第一层包括平坦化停止层，以及屏蔽 写差距。

公开(公告)号：US08547660B2

公开(公告)日：2013-10-01

申请号：US12641251

申请日：2009-12-17

申请人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

发明人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/315 ,  Y10T428/11 ,  Y10T428/1171

摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.

摘要翻译： 一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离 层。 薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。 尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。 可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

公开(公告)号：US08441757B2

公开(公告)日：2013-05-14

申请号：US12634456

申请日：2009-12-09

申请人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

发明人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

IPC分类号： G11B5/11 ,  G11B5/187

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： A magnetic write head having a write pole with a tapered trailing edge. The write head has a non-magnetic step layer and a non-magnetic bump formed on the front edge of the magnetic step layer. A non-magnetic trailing gap layer is formed over the tapered trailing edge of the write pole and over the non-magnetic bump and over the non-magnetic step layer. A magnetic trailing shield is formed over at least a portion of the non-magnetic gap layer.

摘要翻译： 一种具有具有锥形后缘的写极的磁写头。 写头具有形成在磁性阶梯层的前边缘上的非磁性阶梯层和非磁性凸块。 非磁性拖尾间隙层形成在写磁极的锥形后缘和非磁性凸块之上以及非磁性阶梯层之上。 在非磁隙层的至少一部分上形成有磁性后屏蔽。

公开(公告)号：US07691434B1

公开(公告)日：2010-04-06

申请号：US11971398

申请日：2008-01-09

申请人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

发明人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T. Krounbi

IPC分类号： G11B5/39 ,  C23C14/46

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996

摘要： A method of fabricating a bias structure of a magnetoresistive read head for a magnetoresistive sensor stack formed on a substrate includes forming an underlayer and forming a bias layer over the underlayer. The method further includes forming a dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack. The dusting layer includes discontinuous, nano-sized islands.

摘要翻译： 制造用于形成在衬底上的磁阻传感器堆叠的磁阻读取头的偏置结构的方法包括形成底层并在衬底上形成偏置层。 该方法还包括在底层或偏置层之间以及偏置层和磁阻传感器堆叠之间的至少一个下直接形成除尘层。 除尘层包括不连续的纳米尺寸岛。