MEMORY SYSTEM CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20240393946A1

    公开(公告)日:2024-11-28

    申请号:US18791933

    申请日:2024-08-01

    Abstract: According to one embodiment, a controller of a memory system performs a first operation a plurality of times for each of a plurality of first blocks. The first operation includes a write operation for writing data in a first write mode for writing m-bit data per memory cell and a data erase operation. While a second block is not a defective block, the controller performs a second operation a plurality of times for the second block. The second operation includes a write operation for writing data in a second write mode for writing n-bit data per memory cell and a data erase operation. When the second block is a defective block, the controller selects a first block from the plurality of first blocks, and writes second write data to the selected first block in the second write mode.

    MEMORY SYSTEM AND METHOD OF CONTROLLING THE MEMORY SYSTEM

    公开(公告)号:US20240311291A1

    公开(公告)日:2024-09-19

    申请号:US18595633

    申请日:2024-03-05

    Inventor: Shinichi KANNO

    CPC classification number: G06F12/0246 G06F2212/7203

    Abstract: According to one embodiment, a memory system includes a nonvolatile memory, a first write buffer, a second write buffer having a capacity smaller than that of the first write buffer and a bandwidth larger than that of the first write buffer, and a controller. When the write speed of the first group is less than a first value, the controller loads unloaded data among first data into the first write buffer, and after an amount of the first data reaches or exceeds a minimum write size, writes the first data to a first write destination block. When the write speed of the second group is greater than or equal to the first value, the controller loads second data having the minimum write size into the second write buffer and writes the second data to the second write destination block.

    MEMORY SYSTEM AND INFORMATION PROCESSING SYSTEM

    公开(公告)号:US20230401149A1

    公开(公告)日:2023-12-14

    申请号:US18457672

    申请日:2023-08-29

    Abstract: According to one embodiment, a memory system includes a non-volatile memory and a data map configured to manage validity of data written in the non-volatile memory. The data map includes a plurality of first fragment tables corresponding to a first hierarchy and a second fragment table corresponding to a second hierarchy higher than the first hierarchy. Each of the first fragment tables is used to manage the validity of each data having a predetermined size written in a range of physical address in the non-volatile memory allocated to the first fragment table. The second fragment table is used for each of the first fragment tables to manage reference destination information for referencing the first fragment table.

    MEMORY SYSTEM CONTROLLING NONVOLATILE MEMORY
    67.
    发明公开

    公开(公告)号:US20230305704A1

    公开(公告)日:2023-09-28

    申请号:US18327108

    申请日:2023-06-01

    Abstract: According to one embodiment, a controller of a memory system performs a first operation a plurality of times for each of a plurality of first blocks. The first operation includes a write operation for writing data in a first write mode for writing m-bit data per memory cell and a data erase operation. While a second block is not a defective block, the controller performs a second operation a plurality of times for the second block. The second operation includes a write operation for writing data in a second write mode for writing n-bit data per memory cell and a data erase operation. When the second block is a defective block, the controller selects a first block from the plurality of first blocks, and writes second write data to the selected first block in the second write mode.

    MEMORY SYSTEM AND CONTROL METHOD
    68.
    发明公开

    公开(公告)号:US20230297290A1

    公开(公告)日:2023-09-21

    申请号:US17898390

    申请日:2022-08-29

    CPC classification number: G06F3/0665 G06F3/061 G06F3/0659 G06F3/0688

    Abstract: A memory system includes a nonvolatile memory including memory dies, and a controller. The controller is configured to create a first virtual storage with a first part of the memory dies and a second virtual storage with a second part of the memory dies, and create a redundant logical domain spanning one or more memory dies corresponding to the first virtual storage and one or more memory dies corresponding to the second virtual storage. The memory controller is configured to, in response to a write command, store write data corresponding to the write command in a first region of the first virtual storage and in a second region of the second virtual storage, and return to the host a response including a first physical address of the first region and a second physical address of the second region.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

    公开(公告)号:US20230139971A1

    公开(公告)日:2023-05-04

    申请号:US18148060

    申请日:2022-12-29

    Abstract: A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

    MEMORY SYSTEM AND METHOD OF CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20230022741A1

    公开(公告)日:2023-01-26

    申请号:US17959624

    申请日:2022-10-04

    Inventor: Shinichi KANNO

    Abstract: According to one embodiment, when data is to be written to a first physical storage location that is designated by a first physical address, a memory system encrypts the data with the first physical address and a first encryption key, and writes the encrypted data to the first physical storage location. When the encrypted data is to be copied to a second physical storage location, the memory system decrypts the encrypted data with the first physical address and the first encryption key, and re-encrypts the decrypted data with a second encryption key and a copy destination physical address indicative of the second physical storage location.

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