摘要:
The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.
摘要:
A driving system for driving an optical element in a first direction includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.
摘要:
A method for the prevention and/or treatment of a disease caused by hypertension comprising administering to a mammal, such as a human, in need thereof pharmaceutically effective amounts of (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1-[[2′-(1H-tetrazol-5-yl(biphenyl-4-yl]methyl]imidazol-5-carboxylate and a calcium channel blocker which is amlodipine or amlodipine besylate.
摘要:
An optical-element driving mechanism is configured to drive an optical element, and includes a uniaxial driving mechanism that includes a linear actuator that drives in a first direction, and a link mechanism that converts a displacement in a direction orthogonal to the first direction. The linear actuator is level with the link mechanism in an optical-axis direction. The uniaxial driving mechanism is arranged in order of the link mechanism and the linear actuator in a radial direction when viewed form an optical axis of the optical element.
摘要:
Methods for the prevention and/or treatment of arteriosclerosis and restenosis following percutaneous coronary intervention or sudden death and for the inhibition of vascular smooth muscle cells, neointima formulation of blood vessels or vascular remodeling comprising administering to a mammal, such as a human, in need thereof pharmaceutically effective amounts of an angiotensin II receptor antagonist which is (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1-[[2′-(1H-tetrazol-5-yl)biphenyl-4-yl]methyl]imidazol-5-carboxylate and a calcium channel blocker which is amlodipine or amlodipine besylate.
摘要:
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要:
The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.
摘要:
An anti-vibration apparatus includes a target object, a reference object, a measuring device which measures the position of the target object relative to the reference object, a driving mechanism to drive the target object based on the measurement result obtained by the measuring device, a Lorentz's force actuator which supports the reference object, and a power supply device which supplies a constant current to the Lorentz's force actuator. The actuator which supports the reference object uses a Lorentz's force actuator or an actuator which supports the reference object by the pressure of a gas.
摘要:
Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.
摘要:
A pharmaceutical composition comprising the following active ingredients: (A) an angiotensin II receptor antagonist which is (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1 [[2′-(1H-tetrazol-5-yl)biphenyl-4-yl]methyl]imidazol-5-carboxylate and (B) a calcium channel blocker which is amlodipine. The composition is useful for the prophylaxis and/or treatment of arteriosclerosis, hypertension, heart diseases, renal diseases or cerebrovascular diseases.