公开(公告)号：US07696022B2

公开(公告)日：2010-04-13

申请号：US11559546

申请日：2006-11-14

申请人： Sotomitsu Ikeda

发明人： Sotomitsu Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/78675 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0017 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/938

摘要： An electric device having a plurality of nanowires, in which at least one of the nanowires is cut or changed in its electric characteristics so as to have a desired characteristic value of the electric device.

摘要翻译： 一种具有多个纳米线的电子装置，其中，所述纳米线中的至少一个在其电特性中被切割或改变，从而具有所述电气装置的期望特性值。

公开(公告)号：US20090159856A1

公开(公告)日：2009-06-25

申请号：US12390783

申请日：2009-02-23

申请人： Takeyuki Sone ,  Otto Albrecht ,  Koji Yano ,  Sotomitsu Ikeda ,  Yoichi Otsuka

发明人： Takeyuki Sone ,  Otto Albrecht ,  Koji Yano ,  Sotomitsu Ikeda ,  Yoichi Otsuka

IPC分类号： H01B1/12

CPC分类号： C08F297/00 ,  B82Y10/00 ,  C08F38/00 ,  H01L51/0041 ,  H01L51/0595

摘要： The invention provides a block polymer capable of being used as a molecular wire facilitating injection of carriers between itself and an electrode, and a device in which electrodes are bridged by one molecule. The block polymer has a main chain composed of polyacetylene having a spiral structure, and includes a coating insulating block and a conductive block. The coating insulating block has a polyacetylene unit structure having alkyl chains at its side chains through functional groups, the alkyl chains being arranged in a direction parallel to the major axis of the main chain. The conductive block has a polyacetylene unit structure having hydrogen atoms at its side chains through functional groups, the hydrogen atoms being arranged in a direction parallel to the major axis of the main chain. The device has the above-mentioned block polymer, and two or more electrodes.

摘要翻译： 本发明提供能够用作分子线的嵌段聚合物，其有助于在其自身和电极之间注入载体，以及电极通过一个分子桥连的装置。 嵌段聚合物具有由具有螺旋结构的聚乙炔构成的主链，并且包括涂层绝缘块和导电块。 涂层绝缘块具有通过官能团在其侧链上具有烷基链的聚乙炔单元结构，烷基链沿与主链长轴平行的方向排列。 导电性嵌段具有通过官能团在其侧链具有氢原子的聚乙炔单元结构，氢原子沿平行于主链长轴的方向排列。 该装置具有上述嵌段聚合物和两个或更多个电极。

公开(公告)号：US20090020787A1

公开(公告)日：2009-01-22

申请号：US12211342

申请日：2008-09-16

申请人： Shunsuke SHIOYA ,  Sotomitsu Ikeda

发明人： Shunsuke SHIOYA ,  Sotomitsu Ikeda

IPC分类号： H01L29/76

CPC分类号： H01L29/861 ,  B82Y10/00 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14683 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/868 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A semiconductor device, comprising a semiconductor nanowire having a first region with one of a PN junction and a PIN junction and a second region with a field effect transistor structure, a pair of electrodes connected to both ends of the semiconductor nanowire, and a gate electrode provided in at least a part of the second region via an insulating layer. The semiconductor nanowire has a P-type semiconductor portion and an N-type semiconductor portion, and one of the P-type semiconductor portion and the N-type semiconductor portion is a common structural element of both the first and second regions.

摘要翻译： 一种半导体器件，包括具有PN结和PIN结之一的第一区域和具有场效应晶体管结构的第二区域的半导体纳米线，连接到半导体纳米线的两端的一对电极和栅电极 经由绝缘层设置在第二区域的至少一部分中。 半导体纳米线具有P型半导体部分和N型半导体部分，P型半导体部分和N型半导体部分之一是第一和第二区域的共同结构元件。

公开(公告)号：US07378175B2

公开(公告)日：2008-05-27

申请号：US10851106

申请日：2004-05-24

申请人： Sotomitsu Ikeda

发明人： Sotomitsu Ikeda

IPC分类号： H01M2/08 ,  H01M2/14

CPC分类号： H01M8/0247 ,  H01M4/8605 ,  H01M4/90 ,  H01M4/92 ,  H01M8/1007 ,  H01M8/241 ,  H01M2250/30 ,  Y02B90/18

摘要： A highly efficient fuel cell is provided that can be reduced in size and provide a large electromotive force and that comprises an electrolyte/electrode joined member comprising a fuel electrode, an oxidizer electrode, and an electrolyte membrane provided between the electrodes, wherein a plurality of spacers are provided at least on a surface on the oxidizer electrode side of the electrolyte/electrode joined member.

摘要翻译： 提供了一种高效率的燃料电池，其尺寸可以减小并且提供大的电动势，并且包括电解质/电极接合构件，其包括设置在电极之间的燃料电极，氧化剂电极和电解质膜，其中多个 至少在电解质/电极接合部件的氧化剂电极侧的表面上设置间隔物。

公开(公告)号：US20070126079A1

公开(公告)日：2007-06-07

申请号：US11553025

申请日：2006-10-26

申请人： Shunsuke Shioya ,  Sotomitsu Ikeda

发明人： Shunsuke Shioya ,  Sotomitsu Ikeda

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L27/1085 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78696

摘要： A capacitor comprises a first electrode comprised of an electroconductive nano-wire, a dielectric layer partly covering the peripheral face of the first electrode, and a second electrode covering the peripheral face of the dielectric layer. In a circuit device employing the capacitor, a plurality of the capacitors are arranged roughly perpendicularly to a substrate comprised in the circuit device or in parallel to a substrate comprised in the circuit device.

摘要翻译： 电容器包括由导电性纳米线构成的第一电极，部分地覆盖第一电极的周面的电介质层和覆盖电介质层的周面的第二电极。 在采用该电容器的电路装置中，多个电容器被大体上垂直于包含在电路装置中的基板或平行于包括在电路装置中的基板布置。

公开(公告)号：US20070126044A1

公开(公告)日：2007-06-07

申请号：US11555943

申请日：2006-11-02

申请人： Shunsuke Shioya ,  Sotomitsu Ikeda

发明人： Shunsuke Shioya ,  Sotomitsu Ikeda

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/1255 ,  H01L27/3244 ,  H01L28/60 ,  H01L29/0673 ,  H01L29/0676

摘要： In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode, a source electrode and a drain electrode of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire, and the capacitor comprises a first electrode comprised of a second nano-wire having electroconductivity, a dielectric layer partly covering the peripheral face of the first electrode and a second electrode covering the peripheral face of the dielectric layer.

摘要翻译： 在具有场效应晶体管和电容器的电路装置中，电容器连接到场效应晶体管的栅电极，源电极和漏电极中的至少一个，场效应晶体管具有由第一 纳米线，并且电容器包括由具有导电性的第二纳米线组成的第一电极，部分地覆盖第一电极的外周面的电介质层和覆盖电介质层的外周面的第二电极。

公开(公告)号：US4993036A

公开(公告)日：1991-02-12

申请号：US412983

申请日：1989-09-26

申请人： Sotomitsu Ikeda ,  Masahiro Okuda

发明人： Sotomitsu Ikeda ,  Masahiro Okuda

IPC分类号： H01S5/028 ,  H01S5/12 ,  H01S5/125 ,  H01S5/187 ,  H01S5/34 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/125 ,  H01S5/187 ,  H01S5/34 ,  H01S5/4043 ,  H01S5/028 ,  H01S5/12 ,  H01S5/3428 ,  H01S5/4087

摘要： Disclosed is a semiconductor laser array including a plurality of semiconductor lasers each having an active layer having a quantum well structure with at least two quantum levels. The semiconductor lasers have reflecting means having different wavelength selection properties.