公开(公告)号：US20050146048A1

公开(公告)日：2005-07-07

申请号：US10748359

申请日：2003-12-30

申请人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

发明人： Valery Dubin ,  Peter Moon ,  Kevin O'Brien

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76862 ,  H01L21/76865

摘要： A method for making a semiconductor device is provided including providing a substrate, and forming a dielectric layer over the substrate. The method also includes defining a damascene interconnect structure in the dielectric layer and forming a barrier layer over the dielectric layer and within the damascene interconnect structure where the barrier layer is tapered within the damascene interconnect structure.

摘要翻译： 提供一种制造半导体器件的方法，包括提供衬底，并在衬底上形成电介质层。 该方法还包括在电介质层中限定镶嵌互连结构，并在电介质层之上和镶嵌互连结构内形成阻挡层，其中阻挡层在镶嵌互连结构内呈锥形。

公开(公告)号：US20050070093A1

公开(公告)日：2005-03-31

申请号：US10674579

申请日：2003-09-29

申请人： Chris Barns ,  Kevin O'Brien ,  Anne Miller

发明人： Chris Barns ,  Kevin O'Brien ,  Anne Miller

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/321 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/7684 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3212

摘要： A method of forming a microelectronic structure and its associated structures is described. In one embodiment, a substrate is provided with a sacrificial layer disposed on a hard mask layer, and a metal layer disposed in a trench of the substrate and on the sacrificial layer. The metal layer is then removed at a first removal rate wherein a dishing is induced on a top surface of the metal layer until the sacrificial layer is exposed, and simultaneously removing the metal layer and the sacrificial layer at a second removal rate without substantially removing the hard mask.

公开(公告)号：US20050070061A1

公开(公告)日：2005-03-31

申请号：US10963839

申请日：2004-10-12

申请人： Chris Barns ,  Kevin O'Brien ,  Anne Miller

发明人： Chris Barns ,  Kevin O'Brien ,  Anne Miller

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/321 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/7684 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3212

摘要： A method of forming a microelectronic structure and its associated structures is described. That method comprises providing a substrate comprising a sacrificial layer disposed on a hard mask layer, and a metal layer disposed in a trench of the substrate and on the sacrificial layer, removing the metal layer at a first removal rate wherein a dishing is induced on a top surface of the metal layer until the sacrificial layer is exposed, and simultaneously removing the metal layer and the sacrificial layer at a second removal rate without substantially removing the hard mask.

摘要翻译： 描述了形成微电子结构及其相关结构的方法。 该方法包括提供包括设置在硬掩模层上的牺牲层的衬底和设置在衬底的沟槽中和在牺牲层上的金属层，以第一去除速率移除金属层，其中在 直到牺牲层被暴露为止，同时以第二去除速率去除金属层和牺牲层而基本上不去除硬掩模。

公开(公告)号：US20050003650A1

公开(公告)日：2005-01-06

申请号：US10610743

申请日：2003-07-02

申请人： Shriram Ramanathan ,  Patrick Morrow ,  Scott List ,  Michael Chan ,  Mauro Kobrinsky ,  Sarah Kim ,  Kevin O'Brien ,  Michael Harmes ,  Thomas Marieb

发明人： Shriram Ramanathan ,  Patrick Morrow ,  Scott List ,  Michael Chan ,  Mauro Kobrinsky ,  Sarah Kim ,  Kevin O'Brien ,  Michael Harmes ,  Thomas Marieb

IPC分类号： H01L21/60 ,  H01L21/98 ,  H01L25/065 ,  H01L21/44 ,  H01L21/48 ,  H01L23/02 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L24/16 ,  H01L24/11 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/8183 ,  H01L2224/81894 ,  H01L2224/81895 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19041

摘要： Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.

摘要翻译： 具有可靠接合和衬底保护的三维堆叠衬底布置。