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    Method of forming on-chip decoupling capacitor with bottom electrode layer having surface roughness
    2.
    发明授权
    Method of forming on-chip decoupling capacitor with bottom electrode layer having surface roughness 有权
    形成具有表面粗糙度的底部电极层的片上去耦电容器的方法

    公开(公告)号：US07960226B2

    公开(公告)日：2011-06-14

    申请号：US11317694

    申请日：2005-12-23

    Applicant: Bruce A. Block ,  Richard Scott List ,  Ruitao Zhang

    Inventor： Bruce A. Block ,  Richard Scott List ,  Ruitao Zhang

    IPC: H01L21/8242

    CPC classification number: H01L28/75 ,  H01L21/28568 ,  H01L21/76838 ,  H01L23/5223 ,  H01L23/5286 ,  H01L23/53238 ,  H01L27/0805 ,  H01L28/40 ,  H01L28/55 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. On-chip decoupling capacitors help to reduce or prevent L di/dt voltage droop on the power grid for high surge current conditions. The inclusion of one or more decoupling capacitors on a chip, in close proximity to the power grid conductors reduces parasitic inductance and thereby provides improved decoupling performance with respect to high frequency noise. In one embodiment of the present invention, a capacitor stack structure is inserted between metal interconnect layers. Such a capacitor stack may consist of a bottom electrode/barrier; a thin dielectric material having a high dielectric constant; and a top electrode/barrier. In an alternative embodiment, the bottom electrode and/or bottom metal interconnect layer have three dimensional texture to increase the surface area of the capacitor. An illustrative method embodying the present invention, includes fabricating the on-chip decoupling capacitor stack structure and electrically connecting the capacitor to provide efficient capacitive de-coupling. In order to facilitate the removal of photoresist by an oxygen plasma process prior to exposing copper conductors during the capacitor stack etch, an Al hardmask can be used to protect the capacitor formed with Ta2O5 dielectric, or a W hardmask can be used to protect the capacitor formed with BST dielectric.

    Abstract translation: 公开了片上去耦电容器结构以及制造这种去耦电容器的方法。 片内去耦电容有助于在高浪涌电流条件下降低或防止电网上的L di / dt电压下降。 将一个或多个去耦电容器包含在靠近电力电网导体的芯片上减小了寄生电感，从而提供了相对于高频噪声的改进的去耦性能。 在本发明的一个实施例中，在金属互连层之间插入电容器堆叠结构。 这样的电容器堆叠可以由底部电极/屏障组成; 具有高介电常数的薄介电材料; 和顶部电极/屏障。 在替代实施例中，底部电极和/或底部金属互连层具有三维结构以增加电容器的表面积。 体现本发明的说明性方法包括制造片上去耦电容器堆叠结构并电连接电容器以提供有效的电容去耦合。 为了在电容器堆叠蚀刻期间在铜导体暴露之前通过氧​​等离子体工艺来促进光致抗蚀剂的去除，可以使用Al硬掩模来保护由Ta2O5电介质形成的电容器，或者可以使用W硬掩模来保护电容器 用BST电介质形成。

    Electroosmotic pump using nanoporous dielectric frit
    4.
    发明授权
    Electroosmotic pump using nanoporous dielectric frit 失效
    使用纳米多孔介质玻璃料的电渗泵

    公开(公告)号：US07667319B2

    公开(公告)日：2010-02-23

    申请号：US11012519

    申请日：2004-12-15

    Applicant: R. Scott List ,  Alan Myers ,  Quat T. Vu

    Inventor： R. Scott List ,  Alan Myers ,  Quat T. Vu

    IPC: H01L23/34

    CPC classification number: F04B17/00 ,  F04B19/006

    Abstract: An electroosmotic pump may be fabricated using semiconductor processing techniques with a nanoporous open cell dielectric frit. Such a frit may result in an electroosmotic pump with better pumping capabilities.

    Abstract translation: 可以使用具有纳米多孔开孔电介质玻璃料的半导体加工技术制造电渗泵。 这种玻璃料可能导致具有更好泵送能力的电渗泵。

    Enhanced on-chip decoupling capacitors and method of making same
    6.
    发明授权
    Enhanced on-chip decoupling capacitors and method of making same 有权
    增强片上去耦电容及其制作方法

    公开(公告)号：US07416954B2

    公开(公告)日：2008-08-26

    申请号：US10766674

    申请日：2004-01-27

    Applicant: Bruce A. Block ,  Richard Scott List

    Inventor： Bruce A. Block ,  Richard Scott List

    IPC: H01L21/00

    CPC classification number: H01L28/87 ,  H01L27/0805

    Abstract: An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method including forming an interlayer dielectric including alternating layers of dissimilar dielectric materials in a multilayer stack over a metal layer of a device structure; forming a via having a corrugated sidewall; and forming a decoupling capacitor stack in the via that conforms to the sidewall of the via.

    Abstract translation: 一种包括在电路上的金属化层之间形成的电容器的装置，所述电容器包括耦合到金属层的底部电极和耦合到金属通孔的顶部电极，其中所述电容器具有波纹侧壁轮廓。 一种方法，包括在器件结构的金属层上的多层堆叠中形成包含不同介电材料的交替层的层间电介质; 形成具有波形侧壁的通孔; 以及在通孔中形成去耦电容器叠层，其符合通孔的侧壁。

    Bonded wafer processing method
    8.
    发明授权
    Bonded wafer processing method 失效
    粘合晶片加工方法

    公开(公告)号：US07129172B2

    公开(公告)日：2006-10-31

    申请号：US10811758

    申请日：2004-03-29

    Applicant: Patrick Morrow ,  R. Scott List ,  Michael Y. Chan

    Inventor： Patrick Morrow ,  R. Scott List ,  Michael Y. Chan

    IPC: H01L21/302

    CPC classification number: H01L21/304 ,  H01L21/187 ,  Y10S438/977

    Abstract: According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first wafer is removed.

    Abstract translation: 根据一个实施例，公开了一种方法。 该方法包括将光致抗蚀剂层施加到第一晶片，蚀刻第一晶片，将第一晶片接合到第二晶片并使第一晶片变薄; 其中去除第一晶片的未支撑的斜面部分。

    Self-aligned electrodes contained within the trenches of an electroosmotic pump
    9.
    发明授权
    Self-aligned electrodes contained within the trenches of an electroosmotic pump 有权
    自对准电极包含在电渗泵的沟槽内

    公开(公告)号：US07105382B2

    公开(公告)日：2006-09-12

    申请号：US10721441

    申请日：2003-11-24

    Applicant: Alan M. Myers ,  Sarah E. Kim ,  R. Scott List

    Inventor： Alan M. Myers ,  Sarah E. Kim ,  R. Scott List

    IPC: H01L21/50

    CPC classification number: H01L23/473 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01078 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/00

    Abstract: A device where the electrodes of an electroosmotic pump are located directly in the flow-producing region of the electroosmotic pump is described as well as methods of forming such a device. Placing the electrodes of an electroosmotic pump directly in the flow-producing region of the electroosmotic pump may increase the flow rate of a cooling fluid that is pumped through the pump. The cooling fluid may then remove a greater amount of heat from the substrate over which it is flowed. The substrate may be the non-device side of a die or a thermal management chip that is placed in direct contact with the non-device side of a die. In these instances the electroosmotic pump may be part of a microelectronic package containing the die or the thermal management chip.

    Abstract translation: 描述电渗泵的电极直接位于电渗泵的流动产生区域中的装置以及形成这种装置的方法。 将电渗泵的电极直接放置在电渗泵的流动产生区域中可以增加泵送通过泵的冷却流体的流量。 然后，冷却流体可以从其流过的基底上移除更大量的热量。 衬底可以是与管芯的非器件侧直接接触的管芯或热管理芯片的非器件侧。 在这些情况下，电渗泵可以是包含管芯或热管理芯片的微电子封装的一部分。

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