公开(公告)号：US08263450B2

公开(公告)日：2012-09-11

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/00

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20120132956A1

公开(公告)日：2012-05-31

申请号：US13367909

申请日：2012-02-07

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US20120032255A1

公开(公告)日：2012-02-09

申请号：US13277820

申请日：2011-10-20

申请人： Armin Willmeroth ,  Holger Kapels

发明人： Armin Willmeroth ,  Holger Kapels

IPC分类号： H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7824

摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

摘要翻译： 公开了一种集成电路和部件。 在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

公开(公告)号：US08101997B2

公开(公告)日：2012-01-24

申请号：US12111749

申请日：2008-04-29

申请人： Armin Willmeroth ,  Michael Rueb

发明人： Armin Willmeroth ,  Michael Rueb

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/7395

摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.

摘要翻译： 在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。 半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。 漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。 朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。 朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

公开(公告)号：US08063419B2

公开(公告)日：2011-11-22

申请号：US11623571

申请日：2007-01-16

申请人： Armin Willmeroth ,  Holger Kapels

发明人： Armin Willmeroth ,  Holger Kapels

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7824

摘要： An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

摘要翻译： 公开了一种集成电路和部件。 在一个实施例中，组件是补偿部件，公开了以V形方式构造漂移区域中的补偿区域，以实现空间电荷区域从补偿区域的上端到下端的会聚。

公开(公告)号：US07968919B2

公开(公告)日：2011-06-28

申请号：US11961235

申请日：2007-12-20

申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.

摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

公开(公告)号：US20070023830A1

公开(公告)日：2007-02-01

申请号：US11435979

申请日：2006-05-17

申请人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US06838729B2

公开(公告)日：2005-01-04

申请号：US10134113

申请日：2002-04-29

申请人： Andreas Schlögl ,  Markus Schmitt ,  Hans-Joachim Schulze ,  Markus Vossebürger ,  Armin Willmeroth

发明人： Andreas Schlögl ,  Markus Schmitt ,  Hans-Joachim Schulze ,  Markus Vossebürger ,  Armin Willmeroth

IPC分类号： H01L21/261 ,  H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/261 ,  H01L21/263 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/32

摘要： The invention relates to a semiconductor component with enhanced avalanche ruggedness. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6 % or more above the static reverse voltage at the same temperature.

公开(公告)号：US06812524B2

公开(公告)日：2004-11-02

申请号：US10013999

申请日：2001-12-11

申请人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

发明人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7816

摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.

摘要翻译： 半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。 补偿区相对于漂移区具有互补导电类型并且包括至少两个段。 选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围 当前。

公开(公告)号：US06667514B2

公开(公告)日：2003-12-23

申请号：US10190119

申请日：2002-07-03

申请人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

发明人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/41766

摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.

摘要翻译： 半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。 因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。 还提供了制造具有电荷补偿结构的半导体部件的方法。