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    Field effect controlled semiconductor component
    1.
    发明授权
    Field effect controlled semiconductor component 有权
    场效应控制半导体元件

    公开(公告)号：US06812524B2

    公开(公告)日：2004-11-02

    申请号：US10013999

    申请日：2001-12-11

    申请人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    发明人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7816

    摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.

    摘要翻译： 半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。 补偿区相对于漂移区具有互补导电类型并且包括至少两个段。 选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围 当前。

    Semiconductor component with a charge compensation structure and associated fabrication
    2.
    发明授权
    Semiconductor component with a charge compensation structure and associated fabrication 有权
    具有电荷补偿结构和相关制造的半导体元件

    公开(公告)号：US06667514B2

    公开(公告)日：2003-12-23

    申请号：US10190119

    申请日：2002-07-03

    申请人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

    发明人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/41766

    摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.

    摘要翻译： 半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。 因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。 还提供了制造具有电荷补偿结构的半导体部件的方法。

    Semiconductor arrangement with active drift zone
    4.
    发明授权
    Semiconductor arrangement with active drift zone 有权
    具有主动漂移区的半导体装置

    公开(公告)号：US08866253B2

    公开(公告)日：2014-10-21

    申请号：US13362038

    申请日：2012-01-31

    申请人： Rolf Weis ,  Gerald Deboy ,  Michael Treu ,  Armin Willmeroth ,  Hans Weber

    发明人： Rolf Weis ,  Gerald Deboy ,  Michael Treu ,  Armin Willmeroth ,  Hans Weber

    IPC分类号： H01L27/00

    CPC分类号： H01L27/0207 ,  H01L21/84 ,  H01L21/845 ,  H01L27/06 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/4236 ,  H01L29/78 ,  H03K17/063 ,  H03K17/102

    摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.

    摘要翻译： 半导体器件布置包括具有负载路径的第一半导体器件和多个第二半导体器件，每个第二半导体器件具有在第一和第二负载端子与控制端子之间的负载路径。 第二半导体器件的负载路径串联连接并与第一半导体器件的负载路径串联连接。 每个第二半导体器件的控制端子连接到其它第二半导体器件之一的负载端子，并且其中一个第二半导体器件的控制端子连接到第一半导体器件的负载端子之一。 每个第二半导体器件具有至少一个器件特性。 第二半导体器件中的至少一个的至少一个器件特征与第二半导体器件中的其它器件的相应器件特性不同。

    SEMICONDUCTOR DEVICE WITH INHERENT CAPACITANCES AND METHOD FOR ITS PRODUCTION
    8.
    发明申请
    SEMICONDUCTOR DEVICE WITH INHERENT CAPACITANCES AND METHOD FOR ITS PRODUCTION 有权
    具有固有电容的半导体器件及其制造方法

    公开(公告)号：US20090224302A1

    公开(公告)日：2009-09-10

    申请号：US12043429

    申请日：2008-03-06

    申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

    发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

    IPC分类号： H01L29/94 ,  H01L21/8238

    CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

    摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

    Field-effect-controllable semiconductor component and method for producing the semiconductor component
    10.
    发明授权
    Field-effect-controllable semiconductor component and method for producing the semiconductor component 有权

    公开(公告)号：US06940126B2

    公开(公告)日：2005-09-06

    申请号：US10654683

    申请日：2003-09-04

    申请人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

    发明人： Gerald Deboy ,  Uwe Wahl ,  Armin Willmeroth

    IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/808 ,  H01L29/76 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/7838 ,  H01L29/8083

    摘要： A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.