公开(公告)号：US09929006B2

公开(公告)日：2018-03-27

申请号：US15215102

申请日：2016-07-20

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/31 ,  H01L21/02 ,  C01B21/068 ,  C09D7/12 ,  C07F7/02 ,  H01L21/768

CPC classification number: H01L21/02208 ,  C01B21/068 ,  C07F7/025 ,  C09D7/63 ,  C23C16/00 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45525 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76831

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US20180061665A1

公开(公告)日：2018-03-01

申请号：US15253454

申请日：2016-08-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey

IPC: H01L21/477 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02675 ,  H01L21/428 ,  H01L21/477 ,  H01L29/0665

Abstract: A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonant frequency of crystalline defects within the at least one 2D material to selectively energize and remove the crystalline defects from the at least one 2D material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems are also described.

公开(公告)号：US20160181513A1

公开(公告)日：2016-06-23

申请号：US15057909

申请日：2016-03-01

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括由包含扩散物质和至少一种其它物质的前体磁性材料形成的磁性区域。 无定形区域靠近磁性区域并且由前体捕集材料形成，该前体捕集材料包含至少一种具有至少一个捕获位点和对扩散物质的化学亲和力的吸附物种。 扩散物质从前体磁性材料转移到前体捕获材料，其中它们在捕获位点处与至少一种attracter物质结合。 富集陷阱材料的种类可以混合，使得富集陷阱材料变得或保持无定形。 耗尽的磁性材料然后可以通过相邻结晶材料的传播而结晶，而不受来自无定形富集陷阱材料的干扰。 这使得能够实现高隧道磁阻和高磁各向异性强度。 还公开了制造方法和半导体器件。

公开(公告)号：US20160087204A1

公开(公告)日：2016-03-24

申请号：US14807030

申请日：2015-07-23

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L45/00

CPC classification number: H01L45/147 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143

Abstract: Some embodiments include a device having a conductive material, a metal chalcogenide-containing material, and a region between the metal chalcogenide-containing material and the conductive material. The region contains a composition having a bandgap of at least about 3.5 electronvolts and a dielectric constant within a range of from about 1.8 to 25. Some embodiments include a device having a first electrode, a second electrode, and a metal chalcogenide-containing material between the first and second electrodes. The device also includes an electric-field-modifying region between the metal chalcogenide-containing material and one of the first and second electrodes. The electric-field-modifying region contains a composition having a bandgap of at least about 3.5 electronvolts having a low dielectric constant and a low conduction band offset relative to a workfunction of metal of the metal chalcogenide-containing material.

Abstract translation: 一些实施例包括具有导电材料，含金属硫族化物的材料以及含金属硫族化物的材料和导电材料之间的区域的器件。 该区域包含具有至少约3.5电子伏特的带隙和介于约1.8至25范围内的介电常数的组合物。一些实施方案包括具有第一电极，第二电极和含金属硫族化物的材料的装置， 第一和第二电极。 该装置还包括在含金属硫族化物的材料和第一和第二电极之一之间的电场修改区域。 电场改性区域含有相对于含金属硫族化物的材料的金属的功函数具有至少约3.5电子伏特的介电常数和低导带偏移的带隙的组合物。

公开(公告)号：US09281466B2

公开(公告)日：2016-03-08

申请号：US14249183

申请日：2014-04-09

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括由包含扩散物质和至少一种其它物质的前体磁性材料形成的磁性区域。 无定形区域靠近磁性区域并且由前体捕集材料形成，该前体捕集材料包含至少一种具有至少一个捕获位点和对扩散物质的化学亲和力的吸附物种。 扩散物质从前体磁性材料转移到前体捕获材料，其中它们在捕获位点处与至少一种attracter物质结合。 富集陷阱材料的种类可以混合，使得富集陷阱材料变得或保持无定形。 耗尽的磁性材料然后可以通过相邻结晶材料的传播而结晶，而不受来自无定形富集陷阱材料的干扰。 这使得能够实现高隧道磁阻和高磁各向异性强度。 还公开了制造方法和半导体器件。

公开(公告)号：US09269888B2

公开(公告)日：2016-02-23

申请号：US14256655

申请日：2014-04-18

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Sumeet C. Pandey ,  Gurtej S. Sandhu

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic cell includes a magnetic tunnel junction that comprises magnetic and nonmagnetic materials exhibiting hexagonal crystal structures. The hexagonal crystal structure is enabled by a seed material, proximate to the magnetic tunnel junction, that exhibits a hexagonal crystal structure matching the hexagonal crystal structure of the adjoining magnetic material of the magnetic tunnel junction. In some embodiments, the seed material is formed adjacent to an amorphous foundation material that enables the seed material to be formed at the hexagonal crystal structure. In some embodiments, the magnetic cell includes hexagonal cobalt (h-Co) free and fixed regions and a hexagonal boron nitride (h-BN) tunnel barrier region with a hexagonal zinc (h-Zn) seed region adjacent the h-Co. The structure of the magnetic cell enables high tunnel magnetoresistance, high magnetic anisotropy strength, and low damping. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括磁性隧道结，其包括具有六方晶系结构的磁性和非磁性材料。 六方晶体结构通过靠近磁性隧道结的种子材料实现，其表现出与磁性隧道结相邻的磁性材料的六方晶系结构相匹配的六方晶系结构。 在一些实施方案中，种子材料邻近无定形基底材料形成，使得种子材料能够以六方晶体结构形成。 在一些实施方案中，磁性电池包括六方钴（h-Co）游离和固定区域以及与h-Co相邻的六方锌（h-Zn）种子区域的六方氮化硼（h-BN）隧道势垒区。 磁性单元的结构能够实现高隧道磁阻，高磁各向异性强度和低阻尼。 还公开了制造方法和半导体器件。

公开(公告)号：US20140319444A1

公开(公告)日：2014-10-30

申请号：US14323839

申请日：2014-07-03

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

Abstract translation: 一些实施例包括具有在一对导电结构之间的数据存储区域的存储单元。 数据存储区域被配置为支持通过存储器单元改变电阻的暂态结构。 数据存储区域包括两个或多个部分，其中一个部分支持短暂结构的较高电阻段，而不是另一部分。 一些实施例包括形成存储器单元的方法。 在一对导电结构之间形成第一氧化物和第二氧化物区域。 氧化物区域被配置为支持通过存储器单元改变电阻的暂态结构。 氧化物区域彼此不同，使得氧化物区域中的一个区域支持短暂结构的较高电阻段。

公开(公告)号：US08785288B2

公开(公告)日：2014-07-22

申请号：US14024836

申请日：2013-09-12

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Sumeet C. Pandey

IPC: H01L21/3205 ,  H01L43/08 ,  G11C11/56

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

Abstract: Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

Abstract translation: 一些实施例包括具有在一对导电结构之间的数据存储区域的存储单元。 数据存储区域被配置为支持通过存储器单元改变电阻的暂态结构。 数据存储区域包括两个或多个部分，其中一个部分支持短暂结构的较高电阻段，而不是另一部分。 一些实施例包括形成存储器单元的方法。 在一对导电结构之间形成第一氧化物和第二氧化物区域。 氧化物区域被配置为支持通过存储器单元改变电阻的暂态结构。 氧化物区域彼此不同，使得氧化物区域中的一个区域支持短暂结构的较高电阻段。