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公开(公告)号：US06479329B2
公开(公告)日：2002-11-12
申请号：US09853588
申请日：2001-05-14
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2026 , H01L21/423 , H01L29/66757
摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
摘要翻译： 在制造薄膜晶体管时，在基板上形成非晶硅膜之后，通过用包含镍作为金属元素的溶液（乙酸镍溶液）旋涂形成硅化镍层，其加速（促进）硅的结晶 并通过热处理。 选择性地将硅化镍层图案化以形成岛状硅化镍层。 非晶硅膜被图案化。 在移动激光器时照射激光，使得从形成硅化镍层的区域发生晶体生长，并且获得与单晶相同的区域（单畴区域）。
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62.发明授权公开(公告)号：US06423586B1
公开(公告)日：2002-07-23
申请号：US09038926
申请日：1998-03-09
IPC分类号： H01L21336
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子/ cm 3以下，优选1×1019原子的浓度熔化含有碳，氮和氧的非晶半导体膜 cm-3以下，通过将激光等离子体的激光或高强度光照射到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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公开(公告)号：US5923968A
公开(公告)日：1999-07-13
申请号：US525219
申请日：1995-09-08
IPC分类号： G02F1/1362 , H01L21/02 , H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： H01L21/2026 , H01L21/3221 , H01L27/1277 , H01L27/1281 , H01L29/66757 , G02F1/13454
摘要： In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus-is formed by patterning the silicide layer, laser light is irradiated during heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment 30.
摘要翻译： 在制造薄膜晶体管时，与非晶硅膜接触地添加含有促进硅结晶化的金属元素的溶液，然后通过加热处理形成硅化物层。 此外，在通过对硅化物层进行构图而形成晶体生长核的区域之后，在加热过程中照射激光。 结果，从作为非晶硅膜中的晶体生长核的区域进行晶体生长，从而形成对应于单晶的单畴区域。 此外，在添加溶液之前，可以对非晶硅膜进行等离子体处理30。
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64.发明授权公开(公告)号：US07569440B2
公开(公告)日：2009-08-04
申请号：US11134291
申请日：2005-05-23
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/2026 , H01L21/3003 , H01L21/67155 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78675
摘要： A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜; 通过主要含有氢或氦的气体的等离子体处理所述非晶硅膜; 并向所述非晶硅膜提供能量。
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公开(公告)号：US20050181583A1
公开(公告)日：2005-08-18
申请号：US11105404
申请日：2005-04-14
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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公开(公告)号：US06670640B1
公开(公告)日：2003-12-30
申请号：US09327473
申请日：1999-06-08
IPC分类号： H01L29786
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , G02F1/13454 , H01L21/2022 , H01L21/2026 , H01L21/3221 , H01L27/1214 , H01L27/1277 , H01L29/66757
摘要： In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus is formed by patterning the silicide layer, laser light is irradiated while heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment 30.
摘要翻译： 在制造薄膜晶体管时，与非晶硅膜接触地添加含有促进硅结晶化的金属元素的溶液，然后通过加热处理形成硅化物层。 此外，在通过图案化硅化物层形成作为晶体生长核的区域之后，在加热过程中照射激光。 结果，从作为非晶硅膜中的晶体生长核的区域进行晶体生长，从而形成对应于单晶的单畴区域。 此外，在添加溶液之前，可以对非晶硅膜进行等离子体处理30。
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67.发明授权Semiconductor material and method for forming the same and thin film transistor 失效用于形成相同薄膜晶体管的半导体材料和方法公开(公告)号：US06271066B1
公开(公告)日：2001-08-07
申请号：US08095172
申请日：1993-07-23
IPC分类号： H01L2184
CPC分类号： H01L29/78675 , H01L29/16
摘要： A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下步骤制造，所述方法包括：将激光束等效于激光的激光束或高强度光照射到含有碳，氮和氧的非晶硅膜中， 浓度为5×1019原子％-3或更低，优选为1×1019原子％-3或更低，而不熔化非晶硅膜。 本发明提供了具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管等薄膜半导体器件，从而改善器件特性。
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公开(公告)号：US06242289B1
公开(公告)日：2001-06-05
申请号：US09292016
申请日：1999-04-15
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2026 , H01L21/423 , H01L29/66757
摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
摘要翻译： 在制造薄膜晶体管时，在基板上形成非晶硅膜之后，通过用包含镍作为金属元素的溶液（乙酸镍溶液）旋涂形成硅化镍层，其加速（促进）硅的结晶 并通过热处理。 选择性地将硅化镍层图案化以形成岛状硅化镍层。 非晶硅膜被图案化。 在移动激光器时照射激光，使得从形成硅化镍层的区域发生晶体生长，并且获得与单晶相同的区域（单畴区域）。
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公开(公告)号：US5972105A
公开(公告)日：1999-10-26
申请号：US528407
申请日：1995-09-14
CPC分类号： H01L27/1214 , C30B1/023 , C30B29/06 , H01L21/2022 , H01L29/66757
摘要： Thin-film transistors (TFTs) having characteristics comparable to those of a single-crystal silicon wafer are provided. A buffer film made from silicon oxide is formed on a first amorphous silicon film. A nickel acetate solution containing a metal element such as nickel for promoting crystallization of silicon is applied to the first amorphous silicon film. The laminate is heat-treated to form a nickel silicide layer. The nickel silicide layer is then patterned. A second amorphous silicon film is formed and heat-treated to grow crystals. Thus, monodomain regions which can be regarded as single crystals are formed. Active layers of TFTs are formed from these monodomain regions.
摘要翻译： 提供具有与单晶硅晶片相当的特性的薄膜晶体管（TFT）。 在第一非晶硅膜上形成由氧化硅制成的缓冲膜。 将含有金属元素如镍的促进硅结晶的乙酸镍溶液施加到第一非晶硅膜上。 将层压体热处理以形成硅化镍层。 然后将硅化镍层图案化。 形成第二非晶硅膜并进行热处理以生长晶体。 因此，可以形成可视为单晶的单畴区域。 TFT的有源层由这些单畴区形成。
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70.发明授权Semiconductor material and method for forming the same and thin film transistor 失效用于形成相同薄膜晶体管的半导体材料和方法
公开(公告)号：US5962869A
公开(公告)日：1999-10-05
申请号：US183800
申请日：1994-01-21
CPC分类号： H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19 atoms×cm 3以下，优选1×10 19原子×3 -3的浓度熔融其中含有碳，氮和氧的非晶半导体膜 或更低，通过将相当于激光束的激光束或高强度光照射到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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