摘要:
A sliding surface of a high-temperature portion is subjected to an electro-discharge surface treatment with one or both of a high-temperature hard material (4) and a material having a lubricating property at a high temperature (6). The high-temperature hard material (4) is any or a mixture of cBN, TiC, TiN, TiAlN, TiB2, WC, Cr3C2, SiC, ZrC, VC, B4C, Si3N4, ZrO2, and Al2O3. The material having the lubricating property at the high temperature (6) contains chromium and/or chromium oxide (Cr2O3) and/or hexaboron nitride (hBN). An electrode formed by compression molding of the high-temperature hard material, and the high-temperature lubricating material containing at least one of Cr and hBN and having the lubricating property at the high temperature is used as the electrode for the electro-discharge surface treatment.
摘要翻译:用高温硬质材料(4)和具有高温润滑性的材料(6)中的一种或两种对高温部分的滑动表面进行放电表面处理。 高温硬质材料(4)是cBN,TiC,TiN,TiAlN,TiB 2,WC,Cr 3 C 2,SiC,ZrC,VC,B 4 C,Si 3 N 4,ZrO 2和Al 2 O 3的任何或混合物。 具有高温润滑性的材料(6)含有铬和/或氧化铬(Cr 2 O 3)和/或六氮化硼(hBN)。 使用通过高温硬质材料的压缩成型而形成的电极以及含有Cr和hBN中的至少一种且具有高温润滑性的高温润滑材料作为放电表面处理用电极 。
摘要:
A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要:
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要:
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
摘要:
Epoxy resin compositions comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) an inorganic filler, (D) a rare earth oxide, and optionally (E) a phosphazene compound cure into products having improved heat resistance and moisture-proof reliability and are best suited for the encapsulation of semiconductor devices.
摘要:
Compound of formula (I): ##STR1## wherein R.sup.1 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkenyl, C.sub.2 -C.sub.6 alkynyl or --C(.dbd.NH)R.sup.0 where R.sup.0 is hydrogen or C.sub.1 -C.sub.6 alkyl;A is ##STR2## R.sup.2 is hydrogen, C.sub.1 -C.sub.6 alkyl, C.sub.2 -C.sub.6 alkenyl, C.sub.2 -C.sub.6 alkynyl or --C(.dbd.NH)R.sup.6 where R.sup.6 is hydrogen, C.sub.1 -C.sub.6 alkyl or C.sub.3 -C.sub.7 cycloalkyl; R.sup.3 and R.sup.4 are independently hydrogen, C.sub.1 -C.sub.6 alkyl, halogen, hydroxy, carboxy, cyano, --CO.NR.sup.a R.sup.b, --OCO.NR.sup.a R.sup.b or --NR.sup.a R.sup.b, where R.sup.a and R.sup.b are independently hydrogen or C.sub.1 -C.sub.6 alkyl; R.sup.20", R.sup.21', and R.sup.22" are independently hydrogen or C.sub.1 -C.sub.6 alkyl or R.sup.20" and R.sup.21" or R.sup.20" and R.sup.22" together form a heterocyclic group; R.sup.23" and R.sup.24" are independently hydrogen, halogen or C.sub.1 -C.sub.6 alkyl; n is 1, 2 or 3; and n.sup.3" is 1, 2 or 3. The compounds are antibiotics which are resistant to dehydropeptidase I, and are useful for the treatment of microbial infections.
摘要翻译:式(I)化合物:其中R 1是氢,C 1 -C 6烷基,C 2 -C 6烯基,C 2 -C 6炔基或-C(= NH)R 0)其中R 0是氢或C 1 -C 6烷基; (C 1 -C 6)烷基,C 2 -C 6烯基,C 2 -C 6炔基或-C(= NH)R 6,其中R 6是氢,C 1 -C6烷基或C3-C7环烷基; R 3和R 4独立地是氢,C 1 -C 6烷基,卤素,羟基,羧基,氰基,-CO.RRRRb,-OCO,NR a R b或-NR a R b,其中R a和R b独立地是氢或C 1 -C 6烷基; R 20“,R 21'和R 22”独立地是氢或C 1 -C 6烷基或R 20“,R 21”或R 20“和R 22”一起形成杂环基; R 23“和R 24”独立地是氢,卤素或C 1 -C 6烷基; n为1,2或3; 和n3“是1,2或3.化合物是抗脱水肽酶I的抗生素,并且可用于治疗微生物感染。
摘要:
A glass plate positioning and supplying machine has a glass plate positioning machine disposed above a roller conveyor for adjusting the longitudinal, transverse, and rotational position of the glass plate, and a glass plate supplying machine disposed below the glass plate positioning machine for receiving the positioned glass plate from the glass plate positioning machine and supplying it onto the roller conveyor.
摘要:
Carbapenem compounds of formula (I): ##STR1## in which: A is a fully saturated heterocyclic group, of which at least one ring atom is nitrogen; R.sup.1 is hydrogen or methyl; R.sup.2 is hydrogen or alkyl; R.sup.3 is hydrogen or a negative ion; Q is: (i) --B--N.sup.+ R.sup.8 R.sup.9 R.sup.10, where R.sup.8, R.sup.9 and R.sup.10 are alkenyl, alkynyl or optionally substituted alkyl, and B is alkylene or alkylidene.
摘要:
A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要:
Each of the plurality of wireless base stations determines whether the accuracy of a synchronizing signal generated at a corresponding synchronizing signal generation unit is below a predetermined level, and when the accuracy of synchronizing signal is below the predetermined level, refers to the management unit to determine whether there is, among other wireless base stations arranged adjacent to its own station, a wireless base station connected to a synchronizing signal generation unit differing from its own connected synchronizing signal generation unit, and when there is a wireless base station connected to a synchronizing signal generation unit differing from its own connected synchronizing signal generation unit, reducing its own transmission power.