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1.发明授权Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive 有权半导体激光器，半导体激光器，光学拾取器和光盘驱动器的制造方法公开(公告)号：US08896002B2
公开(公告)日：2014-11-25
申请号：US12568855
申请日：2009-09-29
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译： 一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域， 以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。 每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。 掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。 基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。
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2.发明申请METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE 有权生产半导体激光，半导体激光，光学拾取和光盘驱动的方法公开(公告)号：US20100080107A1
公开(公告)日：2010-04-01
申请号：US12568855
申请日：2009-09-29
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译： 一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域， 以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。 每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。 掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。 基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。
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3.发明授权Laser diode device including a top electrode with first and second sections 有权激光二极管器件包括具有第一和第二部分的顶部电极公开(公告)号：US09001860B2
公开(公告)日：2015-04-07
申请号：US13310260
申请日：2011-12-02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/06253 , H01S5/0658 , H01S5/1014 , H01S5/1064 , H01S5/141 , H01S5/22
摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1
摘要翻译： 激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一 电极。 层叠结构具有脊状结构。 将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。 当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1
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公开(公告)号：US09025631B2
公开(公告)日：2015-05-05
申请号：US14345289
申请日：2012-09-04
申请人： Masaru Kuramoto , Rintaro Koda , Hideki Watanabe
发明人： Masaru Kuramoto , Rintaro Koda , Hideki Watanabe
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/141 , H01S5/2009 , H01S5/2031 , H01S5/209 , H01S5/305 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3213 , H01S5/34333 , H01S5/50 , H01S2301/166 , H01S2301/176
摘要： Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1′, 6×10−7 m
摘要翻译： 提供能够以单一模式发射光束的高输出发光装置。 发光装置包括层叠结构体，其通过在基底基板，第二电极和第一电极上依次层叠第一化合物半导体层，有源层和第二化合物半导体层而构成。 第一化合物半导体层具有从基底依次依次包括第一包层和第一导光层的叠层结构，层叠结构体具有由第二化合物半导体层，有源层和 第一导光层的厚度方向的一部分。 假设第一导光层的厚度为t1，构成第一导光层的脊条结构的部分的厚度为t1'，6×10-7m
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公开(公告)号：US08483256B2
公开(公告)日：2013-07-09
申请号：US13417998
申请日：2012-03-12
IPC分类号： H01S3/08
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译： 激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层 由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b） 形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1
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6.发明申请公开(公告)号：US20120002696A1
公开(公告)日：2012-01-05
申请号：US13163251
申请日：2011-06-17
IPC分类号： H01S5/026
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译： 提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。 半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置 通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。
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公开(公告)号：US08982920B2
公开(公告)日：2015-03-17
申请号：US13364957
申请日：2012-02-02
IPC分类号： H01S5/00 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/02268 , H01S5/02272 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0657 , H01S5/141 , H01S5/342 , H01S5/34333 , H01S5/4006 , H01S5/50 , H01S2301/176
摘要： A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at θWG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle θSM=sin−1 [nLE·sin(θWG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.
摘要翻译： 提供了具有抵抗制造成本增加和产量或可靠性降低的结构和结构的基座，并且包括倾斜波导。 具有第一表面并且允许包括波导的半导体发光元件固定在第一表面上的基座，所述波导具有倾斜的轴线;相对于光入射/ 所述半导体发光元件的发射端面由折射率为nLE的半导体材料制成，所述基座包括：在所述第一表面上的熔接材料层; 以及形成在熔接材料层中的对准标记，使得能够以角度＆lt; SM = sin-1 [nLE·sin（＆amp; WG）/ n0]来识别对准标记，其中光的折射率 在半导体发光元件的光入射/发射端面的外侧附近的发射介质为n0。
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公开(公告)号：US20130075772A1
公开(公告)日：2013-03-28
申请号：US13614646
申请日：2012-09-13
IPC分类号： H01L33/58
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
摘要： Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 μm. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.
摘要翻译： 提供一种发光器件，其包括（a）通过在基底衬底上依次生长第一导电类型的第一化合物半导体层，（b）由化合物半导体形成的有源层，以及（c） 第二导电类型的第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 所述层结构由所述第二化合物半导体层的至少一部分在所述第二化合物半导体层的厚度方向上形成。 第一化合物半导体层的厚度大于0.6μm。 在第一化合物半导体层中形成由折射率高于第一化合物半导体层的化合物半导体材料的折射率的化合物半导体材料形成的高折射率层。
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9.发明授权公开(公告)号：US08917753B2
公开(公告)日：2014-12-23
申请号：US13163251
申请日：2011-06-17
IPC分类号： H01S5/00 , B82Y20/00 , H01S5/50 , H01S5/14 , H01S5/065 , H01S5/10 , H01S5/40 , H01S5/343 , H01S5/06 , H01S5/0625 , H01S5/028
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
摘要： Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum.
摘要翻译： 提供了一种半导体光放大器的对准方法，其能够使得半导体光放大器的入射激光与光波导之间的耦合效率优化，而不依赖于外部监视装置。 半导体光放大器的对准方法是光学地放大来自激光源的激光的方法，并输出光放大激光，该激光调整半导体光放大器相对于进入半导体光放大器的激光的相对位置 通过在从激光源向半导体光放大器进入激光的同时将给定的电流值流向半导体光放大器，使得施加到半导体光放大器的电压变为最大。
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公开(公告)号：US20120236886A1
公开(公告)日：2012-09-20
申请号：US13417998
申请日：2012-03-12
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1
摘要翻译： 激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层 由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b） 形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1
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