摘要:
Cyclosporine derivatives are disclosed which possess enhanced efficacy and reduced toxicity over naturally occurring and other presently known cyclosporins and cyclosporine derivatives. The cyclosporine derivatives of the present invention are produced by chemical and isotopic substitution of the cyclosporine A (CsA) molecule by: (1) Chemical substitution and optionally deuterium substitution of amino acid 1; and (2) deuterium substitution at key sites of metabolism of the cyclosporine A molecule such as amino acids 1, 4, 9. Also disclosed are methods of producing the cyclosporine derivatives and method of producing immunosuppression with reduced toxicity with the disclosed cyclosporine derivatives.
摘要:
The present invention provides methods and systems for defining financial transaction components; defining mapping rules for taking individual financial transactions and breaking them down into their components, such as production services, billing services and settlement services. A data processing system in accordance with one embodiment of the present invention, creates a transaction instance corresponding to a financial transaction, creates a production service instance linked to the transaction instance by a first relation instance, and creates a billing service instance linked to the production service instance by a second relation instance. The data processing system, may also create other production service instances linked to the transaction instance using other relation instances, as well as, other billing service instances linked to the production service instances.
摘要:
An aortic cannula (10) includes an enclosure (12) which may be affixed to the end of the cannula (10) by means of adhesive or may be embedded in the cannula during layered construction thereof. The enclosure (12) expands with flow through the lumen of the cannula (10) such that the flow area through the material of the enclosure is several times the flow cross-sectional area of the cannula lumen.
摘要:
In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to a temperature in excess of 1000.degree. C. rapidly. The radiant heat source includes cylindrical lamps placed in a radial pattern to improve heating uniformity. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600.degree. C. while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.
摘要:
A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.