公开(公告)号：US06832949B2

公开(公告)日：2004-12-21

申请号：US10279843

申请日：2002-10-25

申请人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： B24B500

CPC分类号： B24B37/205

摘要： An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.

摘要翻译： 本发明的目的是提供一种化学机械抛光用的窗构件，其防污性和透明性优异，抗划伤性优异，并且还可以容易地进行半导体表面的研磨终点的检测 使用光学终点检测装置对抛光用的半导体晶片进行端点检测的光，也可以使用抛光垫。 本发明的化学机械抛光用窗构件具有至少部分透明地形成在基板部的至少一侧上的防污树脂层的基板部（由聚氨酯树脂等构成）。 该防污树脂层优选由在主链中具有聚硅氧烷链段的氟系聚合物构成。 抛光垫可以是窗构件装配在用于抛光垫（由聚氨酯树脂等构成的盘状，带状等）的通孔的通孔中，该基板设置有贯通孔 或者粘附到用于抛光垫的基板上，以覆盖通孔的开口部分。

公开(公告)号：US06744580B2

公开(公告)日：2004-06-01

申请号：US09814429

申请日：2001-03-21

申请人： Masayuki Hattori ,  Toshiyuki Miyauchi ,  Jun Murayama

发明人： Masayuki Hattori ,  Toshiyuki Miyauchi ,  Jun Murayama

IPC分类号： G11B509

CPC分类号： H03M13/6325 ,  G11B20/10 ,  H03M13/2972

摘要： A magnetic recording and/or reproducing apparatus performing efficient decoding to lower a decoding error rate. A magnetic recording and/or reproducing apparatus 50 includes a modulation SISO decoder 63 for modulation decoding data modulation-encoded in a predetermined fashion by a modulation coder 52. In the magnetic recording and/or reproducing apparatus 50, the modulation SISO decoder 63 is a soft input soft output (SISO) type modulation decoder fed with a soft input signal and issuing a soft output signal. The modulation SISO decoder 63 is fed with a trellis soft output signal D64 supplied from a trellis SISO decoder 62 to find a soft decision value for an error correction coding data D52 fed to the modulation coder 52 of the recording system to generate a modulated soft decision signal D65. The modulation SISO decoder 63 routes the so-generated modulated soft decision signal D65 to a downstream side error correction soft decoder 64.

摘要翻译： 执行有效解码以降低解码错误率的磁记录和/或再现装置。 磁记录和/或再现装置50包括调制SISO解码器63，用于通过调制编码器52以预定的方式调制对数据进行调制解码。在磁记录和/或再现装置50中，调制SISO解码器63是 软输入软输出（SISO）型调制解码器，输入软输入信号并发出软输出信号。 调制SISO解码器63馈送有从网格SISO解码器62提供的网格软输出信号D64，以找到馈送到记录系统的调制编码器52的纠错编码数据D52的软判决值，以产生调制软判决 信号D65。 调制SISO解码器63将所生成的调制软判决信号D65路由到下游侧纠错软解码器64。

公开(公告)号：US06579153B2

公开(公告)日：2003-06-17

申请号：US09756193

申请日：2001-01-09

申请人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21283

CPC分类号： C23F3/04 ,  C09G1/02 ,  H01L21/3212

摘要： There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5≦RCu/RBM≦2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5≦RCu/RIn≦2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0

摘要翻译： 提供了用于CMP的水性分散体，其可以有效地抛光铜膜和阻挡金属膜，这可以提供足够的平整的成品表面而不过度抛光绝缘膜，以及使用水分散体的CMP方法。 根据本发明的CMP水分散体的特征在于，在相同条件下对铜膜，阻挡金属膜和绝缘膜进行抛光，铜膜（RCu）和屏障（RCu）的抛光速率比（RCu / RBM） 金属膜（RBM）使得0.5 <= RCu / RBM <= 2，铜膜（RCu）和绝缘膜（RIn）的研磨速度比（RCu / RIn）使得0.5 <= RCu / RIn <= 2。 根据本发明的CMP的其它水分散体的特征在于它们含有研磨剂，杂环化合物，有机酸和氧化剂，并且在相同条件下用于抛光铜膜，阻挡金属膜和绝缘膜， 铜膜（RCu）和阻挡金属膜（RBM）的研磨速度比（RCu / RBM）为0

公开(公告)号：US06453439B1

公开(公告)日：2002-09-17

申请号：US09501613

申请日：2000-02-10

申请人： Masayuki Hattori ,  Kohei Yamamoto

发明人： Masayuki Hattori ,  Kohei Yamamoto

IPC分类号： H03M1300

CPC分类号： H03M13/2906 ,  H03M13/27

摘要： A pseudo product code decoder effects error correction by using parity symbols of a first linear-structure error correction code contained in an input symbol train that constitutes a pseudo product code and by using parity symbols of a second linear-structure error correction code. Second-series information symbols are extracted from the symbol train; and a subtraction code of a pseudo product code codeword is formed of the second-series information symbols, with the first-series information symbol portion and the second linear-structure error correction code portion being changed to zero codes. The pseudo product code codeword is transformed into a product code codeword by subtracting processing with the subtraction code. Decoding processing is performed a plurality of times on the symbol train of the product code codeword, thereby effecting error correction; and first-series information symbols are extracted from the error corrected symbol train.

摘要翻译： 伪产品代码解码器通过使用包含在构成伪乘积代码的输入符号串中的第一线性结构错误校正码的奇偶校验符号并且通过使用第二线性结构错误校正码的奇偶校验符号来实现纠错。 从符号列中提取第二序列信息符号; 并且第一系列信息符号部分和第二线性结构纠错码部分被改变为零代码，由第二系列信息符号形成伪乘积码字的减法码。 通过用减法代码减去处理，将伪乘积代码码变换为乘积代码字。 在乘积代码字的符号列上执行多次解码处理，从而进行纠错; 并且从错误校正的符号列中提取第一系列信息符号。

公开(公告)号：US5442578A

公开(公告)日：1995-08-15

申请号：US989035

申请日：1992-12-10

申请人： Masayuki Hattori

发明人： Masayuki Hattori

IPC分类号： G06F7/72 ,  H03M13/15 ,  G06F7/00 ,  G06F15/00

CPC分类号： G06F7/726 ,  H03M13/15

摘要： A Euclidean mutual division circuit that has (2t+1) calculation units and (2t+3) registers for error correction where t is the number of symbols that can be error-corrected. The division unit and each calculation unit conduct Euclidean mutual divisions of either a normal-connection, a cross-connection, or a shift-connection division as directed by a control unit. The final calculation unit outputs a value to a division unit which divides it by another value, then the result of the division is returned to each of the calculation units. Registers that store the inputs for the Euclidean mutual division method include A-side and B-side registers. A-side registers store the coefficients of polynomials Qi(X) and .lambda.i(X), and B-side registers store those of Ri(X) and .mu.i(X). The Euclidean mutual division circuit has a reduced circuit scale for high-speed operation and for increased throughput.

摘要翻译： 具有（2t + 1）计算单位和（2t + 3）寄存器用于纠错的欧几里德互相分割电路，其中t是可以被纠错的符号数。 分割单元和每个计算单元按照控制单元的指示进行正常连接，交叉连接或移位连接分区的欧几里得相互分割。 最终计算单元将值分配给除以另一个值的分割单元，然后将分割结果返回到每个计算单元。 存储欧几里得相互分割方法输入的寄存器包括A侧和B侧寄存器。 A侧寄存器存储多项式Qi（X）和λi（X）的系数，B侧寄存器存储Ri（X）和mu i（X）的寄存器。 欧几里得相互分离电路具有降低的电路规模，用于高速运行和提高吞吐量。

公开(公告)号：US5072267A

公开(公告)日：1991-12-10

申请号：US544206

申请日：1990-06-26

申请人： Masayuki Hattori

发明人： Masayuki Hattori

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L27/0925 ,  H01L29/0878 ,  H01L29/7801 ,  H01L29/7816

摘要： Complementary field effect transistors are provided wherein double-diffusion MOS FETs including an N-channel and a P-channel are formed on one and the same semiconductor substrate. These two channels are respectively formed in well base regions having the same conductivity type, the well base regions being spaced from each other. A double diffusion P-channel MOS FET has drain regions of the conductivity type which is opposite to the conductivity of a well base region, adjoining a base region of the same conductivity type as the well base region. The P-channel is formed to have a thickness which is less than the thickness of the base region, to thereby realize a diffusion P-channel MOS FET having a short channel.

摘要翻译： 提供互补场效应晶体管，其中包括N沟道和P沟道的双扩散MOS FET形成在同一半导体衬底上。 这两个通道分别形成在具有相同导电类型的阱基区域中，阱基区域彼此间隔开。 双扩散P沟道MOS FET具有与阱基区域的导电性相反的导电类型的漏极区域，与阱基区域相同的导电类型的基极区域相邻。 P沟道形成为具有小于基极区域的厚度的厚度，从而实现具有短沟道的扩散P沟道MOS FET。

公开(公告)号：US4952651A

公开(公告)日：1990-08-28

申请号：US226200

申请日：1988-07-29

申请人： Kiyoshi Kasai ,  Masayuki Hattori ,  Hiroshi Tadenuma ,  Shiro Yasukawa

发明人： Kiyoshi Kasai ,  Masayuki Hattori ,  Hiroshi Tadenuma ,  Shiro Yasukawa

IPC分类号： C08F2/18 ,  C08F2/20 ,  C08F259/02 ,  C08F291/00

CPC分类号： C08F259/02 ,  C08F291/00

摘要： Highly crosslinked polymer particles, which may be porous, consisting essentially of a non-hydrophilic polymer can be produced by adding a polymerizable monomer mixture comprising at least 20% by weight of at least one non-hydrophilic, crosslinking polyvinyl monomer to an aqueous dispersion containing a non-crosslinked, low molecular weight polymer particles having a weight average molecular weight of 500-10,000 as a dispersoid, with a non-reactive solvent in a proportion of not more than 1 part by weight per part by weight of the polymerizable monomer mixture, the proportion of the polymerizable monomer mixture plus the non-reactive solvent to the non-crosslinked, low molecular weight polymer particles being 4 to 20 parts by weight per part by weight of the non-crosslinked, low molecular weight polymer particles, and then subjecting the polymerizable monomer mixture to radical emulsion polymerization with stirring.

公开(公告)号：US08080476B2

公开(公告)日：2011-12-20

申请号：US11832403

申请日：2007-08-01

申请人： Atsunori Kawamura ,  Masayuki Hattori

发明人： Atsunori Kawamura ,  Masayuki Hattori

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09G1/02

CPC分类号： C09G1/02

摘要： To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it.A polishing composition comprising an anionic surfactant and a nonionic surfactant, characterized in that the composition is prepared so that the water contact angle of the surface of an object to be polished, after being polished by the composition, would be at most 60°. Particularly, a polishing composition having a pH of from 2 to 9 and comprising at least one anionic surfactant represented by the chemical formula R1-Y1′ or R1-X1-Y1′, wherein R1 is an alkyl group, an alkylphenyl group or an alkenyl group, X1 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and Y1′ is a SO3M1 group or a SO4M1, wherein M1 is a counter ion, a protection film forming agent different from the anionic surfactant, and at least one nonionic surfactant represented by the chemical formula R2-X2, wherein R2 is an alkyl group, and X2 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and having a HLB value of from 10 to 16.

摘要翻译： 提供一种特别适用于在半导体布线工艺中抛光由铜制成的导体层的抛光组合物和使用该抛光组合物的抛光工艺。 一种包含阴离子表面活性剂和非离子表面活性剂的抛光组合物，其特征在于，所述组合物被制备成使得被组合物抛光后待抛光对象表面的水接触角最多为60°。 特别是，具有pH为2〜9的包含至少一种由化学式R1-Y1'或R1-X1-Y1'表示的阴离子表面活性剂的抛光组合物，其中R1是烷基，烷基苯基或烯基 基团，X1是聚氧乙烯基团，聚氧丙烯基团或聚（氧化乙烯 - 氧化丙烯）基团，Y1'是SO3M1基团或SO4M1，其中M1是抗衡离子，不同于阴离子表面活性剂的保护膜形成剂， 和由化学式R2-X2表示的至少一种非离子表面活性剂，其中R2是烷基，X2是聚氧乙烯基，聚氧丙烯基或聚（氧乙烯 - 氧丙烯）基，HLB值为10 到16岁。

公开(公告)号：US07607063B2

公开(公告)日：2009-10-20

申请号：US10523452

申请日：2004-05-28

申请人： Atsushi Kikuchi ,  Masayuki Hattori ,  Toshiyuki Miyauchi ,  Kazuo Watanabe ,  Makiko Kan

发明人： Atsushi Kikuchi ,  Masayuki Hattori ,  Toshiyuki Miyauchi ,  Kazuo Watanabe ,  Makiko Kan

IPC分类号： H03M13/00

CPC分类号： H03M13/2906 ,  G11B20/18 ,  G11B20/1866 ,  G11B2020/1836 ,  H03M13/1111 ,  H03M13/1191 ,  H03M13/15 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/2936

摘要： The present invention relates to a decoding method and a decoder, a program, a recording-and-reproducing apparatus and a method, and a reproducing apparatus and a method that are suitable for decoding encoded data encoded by using a linear code on ring R. A low-density processing unit performs parity-check-matrix low-density processing, performs linear combination for rows of a parity check matrix included in an obtained reception word, and generates a parity check matrix according to the linear-combination result, thereby reducing the density of the parity check matrix used for decoding, at step S21. Then, at step S22, an LDPC decoding unit performs decoding by using a sum product algorithm (SPA) by using the parity check matrix whose density is reduced through the processing performed at step S21. Where the processing at step S22 is finished, the LDPC decoding unit finishes decoding for the reception word. The present invention can be used for an error-correction system.

摘要翻译： 本发明涉及适用于对通过使用环R上的线性码编码的编码数据进行解码的解码方法和解码器，程序，记录和再现装置和方法以及再现装置和方法。 低密度处理单元进行奇偶校验矩阵低密度处理，对获得的接收字中包含的奇偶校验矩阵的行进行线性组合，并根据线性组合结果生成奇偶校验矩阵，从而减少 在步骤S21中用于解码的奇偶校验矩阵的密度。 然后，在步骤S22，LDPC解码单元通过使用通过在步骤S21执行的处理而减小密度的奇偶校验矩阵，通过使用和积算法（SPA）进行解码。 在步骤S22的处理完成的情况下，LDPC解码单元完成对接收字的解码。 本发明可以用于纠错系统。

公开(公告)号：US07498294B2

公开(公告)日：2009-03-03

申请号：US11052910

申请日：2005-02-09

申请人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21/461

CPC分类号： H01L21/02074 ,  C11D3/3765 ,  C11D11/0047 ,  H01L21/3212

摘要： The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.

摘要翻译： 该清洁组合物包含具有交联结构的有机聚合物颗粒（A）和表面活性剂（B），并在化学机械抛光后使用。 半导体衬底的清洁方法是通过使用清洁组合物来清洁化学机械抛光后的半导体衬底的清洗方法。 通过清洗方法制造半导体器件的方法，该半导体器件包括化学和机械抛光半导体衬底的步骤以及在化学机械抛光之后获得的半导体衬底的清洁步骤。