摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要:
A polymeric compound includes at least one monomeric unit of the following formula (I): wherein R1 is a hydrogen atom or a methyl group; and each of R2 and R3 is independently a hydrogen atom or a hydroxyl group. The polymeric compound may include the monomeric unit and at least one monomeric unit selected from monomeric units represented by the following formulae (IIa) and (IIb): wherein R1 is a hydrogen atom or a methyl group; each of R4 and R5 is, for example, a hydrogen atom, a hydroxyl group, an oxo group, or a carboxyl group, wherein R4 and R5 are not concurrently hydrogen atoms; and each of R7 and R8 is independently a hydrogen atom, a hydroxyl group, or an oxo group. The polymeric compound have a high etching resistance in addition to satisfactory transparency, alkali-solubility, and adhesion.
摘要翻译:聚合化合物包括至少一种下式(I)的单体单元:其中R1是氢原子或甲基; R2和R3各自独立地为氢原子或羟基。 聚合化合物可以包括单体单元和选自下式(IIa)和(IIb)表示的单体单元的至少一种单体单元:其中R 1是氢原子或甲基; R4和R5各自为例如氢原子,羟基,氧代基或羧基,其中R4和R5不同时为氢原子; R 7和R 8各自独立地为氢原子,羟基或氧代基。 除了令人满意的透明性,碱溶性和粘合性之外,高分子化合物具有高的耐蚀刻性。
摘要:
A photosensitive material, which comprises, an alkali-soluble resin moiety having an alicyclic skeleton, a polycyclic condensation skeleton, or both alicyclic and polycyclic condensation skeletons, and a diazo compound moiety. The diazo compound moiety may be contained in a side chain of the alkali-soluble resin moiety or included in the photosensitive material in separate from the alkali-soluble resin moiety.
摘要:
The objectives of the present invention are to provide a photosensitive composition having high solubility to organic solvents as well as to alkaline developers or water-base developers of pH 11 or less, and to provide a pattern forming process for obtaining a high-resolution resist pattern. These objectives are achieved by means of a photosensitive composition comprising a compound which is glassy at room temperature and has a cyclic structure with three or more aromatic rings containing an acid-decomposable substituent, and a pattern forming process wherein a photosensitive material using said photosensitive composition is exposed to a light pattern and developed with an aqueous solution of an alkali or with a water-base developer of pH 11 or less.
摘要:
A photosensitive composition comprises an alkali-soluble resin, a compound which has a substituent group decomposable by an acid and generates an alkali-soluble group upon decomposition of the substituent group, or a compound which has a substituent group capable of crosslinking the alkali-soluble resin in the presence of an acid, and a compound which generates an acid upon exposure, which is represented by formula (1) given below: ##STR1## wherein R.sub.11 represents a monovalent organic group or a monovalent organic group into which at least one selected from the group consisting of a halogen atom, a nitro group, and a cyano group is introduced, each of R.sub.12, R.sub.13, and R.sub.14 independently represents hydrogen, a halogen atom, a nitro group, a cyano group, a monovalent organic group, or a monovalent organic group into which at least one selected from the group consisting of a halogen atom, a nitro group, and a cyano group is introduced.
摘要:
Resist containing novolak prepared by condensating halogenated phenol represented by the following formula (III) and one or more phenol derivatives selected from the group consisting of cresol, xylenol, tet-butylphenol and propenylphenol, with a carbonyl compound ##STR1## wherein R.sub.3 is an halogen atom selected from the group consisting of F, Cl, and Br. If the resist is used as a positive-type one, it further contains a photo-sensitive agent, and R.sub.3 in the formula (III) is either F or Br. If the resist is used as a negative-type one, it further contains a photosensitive agent and/or a sensitizer, and R.sub.3 in the formula (III) is either Cl or Br.
摘要:
According to one embodiment, a method for removing carbon dioxide in an exhaust gas utilizing seawater includes: blowing ammonia into seawater to produce ammonia-saturated seawater; contacting an exhaust gas under a state of non-heat with the ammonia-saturated seawater so that carbon dioxide in the exhaust gas is absorbed in the ammonia-saturated seawater; and splaying a solution containing sodium hydrogen carbonate and ammonium chloride which are produced through absorption of the carbon dioxide by the ammonia-saturated seawater utilizing pressure of the exhaust gas while cooling the solution utilizing heat of evaporation of a solvent of the solution so as to settle out and recover the sodium hydrogen carbonate and the ammonium chloride.
摘要:
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.