公开(公告)号：US07918534B2

公开(公告)日：2011-04-05

申请号：US11580677

申请日：2006-10-13

申请人： Hiroshi Inoue ,  Masaki Kataoka ,  Hiroki Murakami

发明人： Hiroshi Inoue ,  Masaki Kataoka ,  Hiroki Murakami

IPC分类号： B41J2/135 ,  B41J2/16

CPC分类号： B41J2/1606 ,  B41J2/1433 ,  B41J2/162 ,  B41J2/1626 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2202/03 ,  B41J2202/11

摘要： The present invention provides a droplet ejection head having a liquid ejection energy driving device to eject a liquid from a nozzle, the droplet ejection head including: a nozzle plate provided with a nozzle to eject liquid droplets; a tetrahedral amorphous carbon film provided on the nozzle plate; and a water-repellent film provided on the tetrahedral amorphous carbon film.

摘要翻译： 本发明提供了一种液滴喷射头，其具有从喷嘴喷射液体的液体喷射能量驱动装置，所述液滴喷射头包括：设有喷嘴以喷射液滴的喷嘴板; 设置在喷嘴板上的四面体非晶碳膜; 以及设置在四面体非晶碳膜上的防水膜。

公开(公告)号：US07889577B2

公开(公告)日：2011-02-15

申请号：US12491970

申请日：2009-06-25

申请人： Hiroki Murakami ,  Kazuhiro Kurihara

发明人： Hiroki Murakami ,  Kazuhiro Kurihara

IPC分类号： G11C7/10

CPC分类号： G11C11/413 ,  G11C16/102 ,  G11C16/105

摘要： A semiconductor device includes: a first sector (12) having data that are all to be erased and having flash memory cells; a second sector (14) having data that are all to be retained and having flash memory cells; a sector select circuit (16) selecting a pair of sectors from among sectors during erasing the data in the first sector, said pair of sectors being the first sector and the second sector; and an SRAM array (storage) (30) retaining the data of the second sector. The present invention can provide a semiconductor device in which a reduced number of sector select circuits is used so that the area of memory cell array can be reduced and provide a method of controlling the semiconductor device.

摘要翻译： 一种半导体器件包括：具有全部要被擦除并具有闪存单元的数据的第一扇区（12）; 具有全部要保留并具有闪存单元的数据的第二扇区（14）; 扇区选择电路（16）在擦除第一扇区中的数据期间从扇区中选择一对扇区，所述一对扇区是第一扇区和第二扇区; 以及保持第二扇区的数据的SRAM阵列（存储）（30）。 本发明可以提供一种半导体器件，其中使用了减少数量的扇区选择电路，使得可以减小存储单元阵列的面积并提供一种控制半导体器件的方法。

公开(公告)号：US20110018722A1

公开(公告)日：2011-01-27

申请号：US12818294

申请日：2010-06-18

申请人： Toyoichi Uozumi ,  Hiroki Murakami

发明人： Toyoichi Uozumi ,  Hiroki Murakami

IPC分类号： G08B17/12

CPC分类号： G01V8/12

摘要： There are provided a photoelectric sensor and a photoelectric sensor system in which received light quantities of a plurality of photoelectric sensors are displayed in an integrated manner, and slight variation in the received light quantity that has nothing to do with a detected condition of a workpiece is ignored and a photoelectric sensor with abnormity is easily found out. Upon acceptance of an instruction to execute scaled display by a control unit of a photoelectric sensor, a scaling adjustment ratio is calculated by assigning the received light quantity to a target value set to be greater than a display upper limit while executing the scaled display. A received light quantity that is subsequently obtained is scaled based on the calculated scaling adjustment ratio to obtain a received light quantity after the scaling.

摘要翻译： 提供了一种光电传感器和光电传感器系统，其中综合地显示多个光电传感器的接收光量，并且与检测到的工件无关的接收光量的轻微变化是 被忽略，容易发现异常的光电传感器。 在接受光电传感器的控制单元执行缩放显示的指令时，通过将接收到的光量分配给设定为大于显示上限的目标值，同时执行缩放显示来计算缩放调整率。 随后获得的接收光量基于所计算的缩放调整比例进行缩放以获得缩放之后的接收光量。

公开(公告)号：US07837791B2

公开(公告)日：2010-11-23

申请号：US12153726

申请日：2008-05-23

申请人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

发明人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

IPC分类号： C30B15/22

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×1013 1×1015 atoms/cm3 provides a surface density of not more than 1 counts/cm2 for the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

摘要翻译： 提出了一种用于粒子监测器的硅单晶晶片，该晶片在光点缺陷的表面密度中具有非常小的量，并且即使在重复SC-1之后也能够保持较小的表面密度。 通过对包含产生结晶起始粒子的区域的硅单晶锭进行切片来制作晶片，并且在重复SC-层之后，尺寸不小于0.12μm的颗粒的表面密度不超过15个计数/ cm 2， 1。 更优选的是，氮浓度为1×1013×1015原子/ cm3的硅单晶晶片，即使重复使用了直径不小于0.12μm的颗粒，表面密度也不超过1个/ cm 2 SC-1。 因此，可以获得最佳地用于粒子监测器的高品质晶片，并且晶片中的非常少量的缺陷使得可以生产器件。

公开(公告)号：US20100172181A1

公开(公告)日：2010-07-08

申请号：US12613993

申请日：2009-11-06

申请人： Hiroki Murakami

发明人： Hiroki Murakami

IPC分类号： G11C16/02 ,  G11C7/10

CPC分类号： G11C16/06 ,  G11C16/04

摘要： Within a page buffer 14 which is coupled to a non-volatile memory cell array 10 and temporally stores data as the data with a predetermined page unit is written in and read out to/from the memory cell array 10, at least one latch circuit 14v-1 including a bit line selector 14s, a page buffer unit circuit 14u including two latch L1, L2, and a latch L3 is set up for a plurality of bit lines. The bit line selector 14s selects one bit line and couples it to the page buffer unit circuit 14u. The latch L1 temporally stores the data which are read out from the memory cell of the selected bit line, and then outputs the data through the latch L2 or L3. On the other hand, the latch L1 temporally stores the programming data inputted through the latch L2 or L3, and after that outputs it to the memory cell of the selected bit line for programming.

摘要翻译： 在与非易失性存储单元阵列10耦合并在时间上存储具有预定页单元的数据的数据的页缓冲器14中写入存储单元阵列10并从存储单元阵列10读出的至少一个锁存电路14v -1，包括位线选择器14s，为多个位线设置包括两个锁存器L1，L2和锁存器L3的寻呼缓冲器单元电路14u。 位线选择器14s选择一个位线并将其耦合到页缓冲器单元电路14u。 锁存器L1暂时存储从所选位线的存储单元读出的数据，然后通过锁存器L2或L3输出数据。 另一方面，锁存器L1暂时存储通过锁存器L2或L3输入的编程数据，然后将其输出到所选位线的存储单元进行编程。

公开(公告)号：US07738299B2

公开(公告)日：2010-06-15

申请号：US11819172

申请日：2007-06-26

申请人： Masao Kuriyama ,  Makoto Hirano ,  Hiroki Murakami ,  Yuichiro Nakagaki

发明人： Masao Kuriyama ,  Makoto Hirano ,  Hiroki Murakami ,  Yuichiro Nakagaki

IPC分类号： G11C11/34

CPC分类号： G11C16/14

摘要： According to an example embodiment, an erase discharge method may include drawing charges accumulated in a floating gate of a floating gate type field effect transistor into a semiconductor substrate to perform an erase operation by applying a first voltage to a word line, a second voltage to an N-well and a P-well, and/or opening a bit line and a ground line. The word line may be grounded, and a discharge transistor connected to the bit line may be turned on. The N-well and the P-well may be grounded to discharge charges accumulated in the N-well and P-well.

摘要翻译： 根据示例实施例，擦除放电方法可以包括将浮置栅极型场效应晶体管的浮动栅极中累积的电荷绘制到半导体衬底中，以通过对字线施加第一电压来执行擦除操作，将第二电压 N阱和P阱，和/或打开位线和接地线。 字线可以接地，并且连接到位线的放电晶体管可以被接通。 N阱和P阱可以被接地以放电累积在N阱和P阱中的电荷。

公开(公告)号：US07578339B2

公开(公告)日：2009-08-25

申请号：US10557604

申请日：2004-05-21

申请人： Kunihiko Kaga ,  Shinji Nakadeguchi ,  Akira Ishibashi ,  Shinichi Wakamoto ,  Toshinori Ohte ,  Hiroki Murakami ,  Tadashi Saito

发明人： Kunihiko Kaga ,  Shinji Nakadeguchi ,  Akira Ishibashi ,  Shinichi Wakamoto ,  Toshinori Ohte ,  Hiroki Murakami ,  Tadashi Saito

IPC分类号： F28F1/32

CPC分类号： F28F1/325 ,  F28F1/32

摘要： A heat exchanger including plate fins and, the tubes fins being stacked at respective intervals relative to one another, and heat exchanger tubes penetrating the fins in a fin-stacking direction. The heat exchanger exchanges heat between fluids flowing, respectively, inside and outside the heat exchanger tubes, through the heat exchanger tubes and the fins. Each of the fins includes cut-raised portions with a bridge shape having leg and beam segments. The cut-raised portions associated with each of the heat exchanger tubes are located substantially only in a region of the fin satisfying Ws=(1−φ)Dp+φD φ>0.5, where Ws is spread width of the cut-raised portions in a direction (column direction) extending along an end of the fin on the upstream side of the second fluid, and D is outer diameter of the heat exchanger tube. Dp is alignment pitch of the heat exchanger tubes in the column direction.

摘要翻译： 一种热交换器，其包括板翅片，并且所述管翅片相对于彼此以相应的间隔堆叠，以及在翅片堆叠方向上穿透所述翅片的热交换器管。 热交换器通过热交换器管和翅片在热交换器管内部和外部流动的流体之间交换热量。 每个翅片包括具有腿和梁段的桥形的切割凸起部分。 与每个热交换器管相关联的切起部分基本上仅位于满足<？in-line-formula description =“In-line formula”end =“lead”>> Ws =（1 -phi）Dp + phiD <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> phi> 0.5，<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Ws是沿着沿着端部延伸的方向（列方向）上的切割部分的展开宽度 翅片在第二流体的上游侧，D是热交换器管的外径。 Dp是热交换器管在列方向上的对准间距。

公开(公告)号：US07493638B2

公开(公告)日：2009-02-17

申请号：US11090050

申请日：2005-03-28

申请人： Takuji Hiramoto ,  Satoshi Niwano ,  Katsumi Tokuda ,  Hiroki Murakami

发明人： Takuji Hiramoto ,  Satoshi Niwano ,  Katsumi Tokuda ,  Hiroki Murakami

IPC分类号： H04N7/16

CPC分类号： H04N21/436 ,  G06Q20/105 ,  H04N7/163 ,  H04N21/4181 ,  H04N21/4623

摘要： An IC card (processing terminal) divides a process into process blocks, and holds a time period required for processing each process block. A receiver (receiving terminal) notifies the IC card of a time period which can be spent for processing non-real-time process data when causing the IC card to perform the processing. The IC card processes the process blocks which can be processed within the notified time period. After the processing, the IC card once sends a response back to the receiver, and then transitions into a state in which it can receive a new request. Accordingly, it becomes possible for the IC card to process real-time process data such as an ECM. In the case where the receiver continues the suspended processing, it notifies the IC card of the continuation of the processing so that it causes the IC card to continue the processing of non-real-time process data.

摘要翻译： IC卡（处理终端）将处理划分为处理块，并保持处理每个处理块所需的时间段。 接收机（接收终端）在IC卡执行处理时向IC卡通知可用于处理非实时处理数据的时间段。 IC卡处理可以在通知的时间段内处理的处理块。 在处理之后，IC卡一次将响应发送回接收器，然后转换到可以接收到新请求的状态。 因此，IC卡可以处理ECM等实时处理数据。 在接收器继续暂停处理的情况下，它向IC卡通知继续处理，使得IC卡继续处理非实时处理数据。

公开(公告)号：US07466605B2

公开(公告)日：2008-12-16

申请号：US11360091

申请日：2006-02-22

申请人： Atsushi Shimizu ,  Hiroki Murakami

发明人： Atsushi Shimizu ,  Hiroki Murakami

IPC分类号： G11C7/00

CPC分类号： G11C16/30 ,  G11C16/08 ,  G11C16/12

摘要： A non-volatile semiconductor device provides a pull-up transistor (M1) for a word line drive which can be downsized. The semiconductor device includes a first decoder (109) including a pull-up transistor (M1) selecting and driving a word line (P2WL) connected to memory cells, a first voltage generating circuit (102) generating a first voltage applied to a source terminal of the pull-up transistor (M1), a second voltage generating circuit (105) generating a second voltage that is applied to a gate terminal of the pull-up transistor (M1), is the second voltage higher than the first voltage, sectors including the memory cells, a vertical word line (VWL) connecting the sectors in a vertical direction and carrying the first voltage to the source terminal of the pull-up transistor (M1), a global word line (GWL) connecting the sectors in a lateral direction and carrying the second voltage to the gate terminal of the pull-up transistor (M1), a second decoder (108) selecting and driving the global word line (GWL), and a third decoder (104) selecting and driving the vertical word line (VWL).

摘要翻译： 非易失性半导体器件为可以减小尺寸的字线驱动器提供上拉晶体管（M1）。 半导体器件包括：第一解码器（109），包括选择并驱动连接到存储单元的字线（P2WL）的上拉晶体管（M1）;第一电压产生电路（102），产生施加到源极端子 ，产生施加到上拉晶体管（M1）的栅极端子的第二电压的第二电压产生电路（105）是比第一电压高的第二电压，扇区 包括存储单元，垂直字线（VWL），垂直方向连接扇区并将第一电压传送到上拉晶体管（M1）的源极端;全局字线（GWL） 并且将第二电压传送到上拉晶体管（M1）的栅极端，选择并驱动全局字线（GWL）的第二解码器（108）和选择并驱动垂直线的第三解码器 字线（VWL）。

公开(公告)号：US20080236476A1

公开(公告)日：2008-10-02

申请号：US12153726

申请日：2008-05-23

申请人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

发明人： Hiroki Murakami ,  Masahiko Okui ,  Hiroshi Asano

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A silicon single crystal wafer for a particle monitor is presented, which wafer has an extremely small amount in the surface density of light point defects and is capable of still maintaining a small surface density even after repeating the SC-1. The wafer is prepared by slicing a silicon single crystal ingot including an area in which crystal originated particles are generated, and the surface density of particles having a size of not less than 0.12 mum is not more than 15 counts/cm2 after repeating the SC-1. More preferably, a silicon single crystal wafer having a nitrogen concentration of 1×1013 1×1015 atoms/cm3 provides a surface density of not more than 1 counts/cm2 for the particles having a diameter of not less than 0.12 mum even after repeating the SC-1. Hence, a high quality wafer optimally used for a particle monitor can be obtained and a very small number of defects in the wafer make it possible to produce devices.

摘要翻译： 提出了一种用于粒子监测器的硅单晶晶片，该晶片在光点缺陷的表面密度中具有非常小的量，并且即使在重复SC-1之后也能够保持较小的表面密度。 通过对包括产生结晶起始粒子的区域的硅单晶锭进行切片来制作晶片，并且尺寸不小于0.12μm的颗粒的表面密度不超过15个/ cm 2， / SUP>重复SC-1。 更优选地，氮浓度为1×10 13/15 15原子/ cm 3的硅单晶晶片提供不超过1×10 15原子/ cm 3的表面密度 即使在重复SC-1之后，直径不小于0.12μm的颗粒的1个计数/ cm 2。 因此，可以获得最佳地用于粒子监测器的高品质晶片，并且晶片中的非常少量的缺陷使得可以生产器件。