公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240429287A1

公开(公告)日：2024-12-26

申请号：US18825421

申请日：2024-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20240260287A1

公开(公告)日：2024-08-01

申请号：US18563630

申请日：2022-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Kenichi OKAZAKI ,  Ryo HATSUMI ,  Koji KUSUNOKI ,  Shunpei YAMAZAKI

IPC: H10K39/34

CPC classification number: H10K39/34

Abstract: A display apparatus having an image capturing function is provided. A display apparatus or an image capturing device with a high aperture ratio is provided. The display apparatus includes a light-emitting element, a light-receiving element, a first resin layer, and a light-blocking layer. A first pixel electrode, a first organic layer, and a common electrode are stacked in this order in the light-emitting element. A second pixel electrode, a second organic layer, and the common electrode are stacked in this order in the light-receiving element. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. The light-blocking layer includes a portion positioned, in a plan view, between the light-emitting element and the light-receiving element. The first resin layer is provided to cover the light-emitting element and the light-receiving element. The first resin layer includes portions positioned between the light-emitting element and the light-blocking layer and between the light-receiving element and the light-blocking layer. Furthermore, the first resin layer includes a portion with thickness smaller than an arrangement interval between the light-emitting element and the light-receiving element in a region overlapping with the light-blocking layer.

公开(公告)号：US20240254616A1

公开(公告)日：2024-08-01

申请号：US18633854

申请日：2024-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US20240244882A1

公开(公告)日：2024-07-18

申请号：US18558233

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Kenichi OKAZAKI ,  Yukinori SHIMA

IPC: H10K59/12 ,  H10K59/122 ,  H10K59/35

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K59/35

Abstract: A display device with high resolution is provided. The display device includes a light-emitting element including a first electrode, an organic compound layer, and a second electrode; a first transistor electrically connected to the first electrode; a second transistor electrically connected to a gate of the first transistor; and an insulator provided to cover an end portion of the first electrode. The first transistor contains silicon in a channel formation region. The second transistor includes an oxide semiconductor in a channel formation region. An end portion of the organic compound layer is positioned in the opening portion of the insulator.

公开(公告)号：US20240224698A1

公开(公告)日：2024-07-04

申请号：US18557142

申请日：2022-04-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daiki NAKAMURA ,  Kenichi OKAZAKI ,  Rai SATO

IPC: H10K59/38

CPC classification number: H10K59/38

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting element, a second light-emitting element, a first color filter, and a second color filter; the first light-emitting element and the second light-emitting element each have the capability to emit white light; the first color filter and the second color filter have the capability to transmit light of the respective colors in light emitted from the light-emitting elements; the first light-emitting element includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer; the second light-emitting element includes a second pixel electrode over an insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer; the first light-emitting element includes a region where an angle between the side surface of the first pixel electrode and the bottom surface of the first pixel electrode is greater than or equal to 60° and less than or equal to 140°; and the ratio (T1/T2) of a thickness T1 of the first pixel electrode to a thickness T2 of the first EL layer is greater than or equal to 0.5.

公开(公告)号：US20240196712A1

公开(公告)日：2024-06-13

申请号：US18276077

申请日：2022-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daiki NAKAMURA ,  Rai SATO

IPC: H10K59/80 ,  H10K59/124 ,  H10K59/127 ,  H10K59/40 ,  H10K59/65

CPC classification number: H10K59/8791 ,  H10K59/124 ,  H10K59/127 ,  H10K59/40 ,  H10K59/65

Abstract: A display apparatus with high display quality is provided. A highly reliable display apparatus is provided. A display apparatus with low power consumption is provided. A display apparatus with a high resolution is provided. A display apparatus with high contrast is provided. The display apparatus includes a plurality of pixels over a first insulating layer. Each of the plurality of pixels includes a first conductive layer provided along an opening portion of the first insulating layer, a second insulating layer over the first conductive layer, an EL layer over the first conductive layer and the second insulating layer, and a common electrode over the EL layer. The second insulating layer is over and in contact with the first conductive layer and placed below the EL layer. The first conductive layers of adjacent pixels are separated by a third insulating layer containing an inorganic material and a fourth insulating layer containing an organic material. A side surface of the first conductive layer and a side surface of the EL layer each include a region in contact with the third insulating layer. The fourth insulating layer is over and in contact with the third insulating layer and placed below the common electrode.

公开(公告)号：US20240179938A1

公开(公告)日：2024-05-30

申请号：US18404122

申请日：2024-01-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Shingo EGUCHI ,  Hiroki ADACHI

IPC: H10K50/822 ,  H10K50/13 ,  H10K102/00

CPC classification number: H10K50/822 ,  H10K50/13 ,  H10K2102/341

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

公开(公告)号：US20240155880A1

公开(公告)日：2024-05-09

申请号：US18548350

申请日：2022-02-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Shingo EGUCHI ,  Ryota HODO

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/35

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/353

Abstract: A high-definition and high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, an insulating layer, and a first sidewall. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. Each of an end portion of the first pixel electrode and an end portion of the second pixel electrode is covered with the insulating layer. The first sidewall is positioned over the insulating layer and covers a side surface of the first light-emitting layer.

公开(公告)号：US20240155870A1

公开(公告)日：2024-05-09

申请号：US18280517

申请日：2022-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Yasuhiro JINBO ,  Kenichi OKAZAKI

IPC: H10K59/12 ,  H10K71/10 ,  H10K71/20 ,  H10K71/40

CPC classification number: H10K59/1201 ,  H10K71/10 ,  H10K71/231 ,  H10K71/40

Abstract: Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.