公开(公告)号：US20220415800A1

公开(公告)日：2022-12-29

申请号：US17893349

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE ,  Kyung-Eun BYUN ,  Hyeonsuk SHIN ,  Seokmo HONG

IPC: H01L23/532 ,  H01L23/522 ,  H01L27/108

Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.

公开(公告)号：US20210125930A1

公开(公告)日：2021-04-29

申请号：US17082530

申请日：2020-10-28

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE ,  Kyung-Eun BYUN ,  Hyeonsuk SHIN ,  Seokmo HONG

IPC: H01L23/532 ,  H01L27/108 ,  H01L23/522

Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.

公开(公告)号：US20200294928A1

公开(公告)日：2020-09-17

申请号：US16884590

申请日：2020-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Keunwook SHIN ,  Yonghoon KIM ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Changseok LEE ,  Changhyun KIM ,  Yeonchoo CHO

IPC: H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US20200286732A1

公开(公告)日：2020-09-10

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Janghee LEE ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Hyunseok LIM ,  Alum JUNG ,  Kyung-Eun BYUN ,  Jeonil LEE ,  Yeonchoo CHO

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: Provided are a method of pre-treating a substrate and a method of directly forming graphene by using the method of pre-treating the substrate. In the method of pre-treating the substrate in the method of directly forming graphene, according to an embodiment, the substrate is pre-treated by using a pre-treatment gas including at least a carbon source and hydrogen. The method of directly forming graphene includes a process of pre-treating a substrate and a process of directly growing graphene on the substrate that is pre-treated. The process of pre-treating the substrate is performed according to the method of pre-treating the substrate.

公开(公告)号：US20180062543A1

公开(公告)日：2018-03-01

申请号：US15412557

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Hyeonjin SHIN ,  Jae-Young KIM ,  Kyung-Eun BYUN

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Disclosed are triboelectric generators using surface plasmon resonance. A triboelectric generator includes first and second electrodes spaced apart from each other, first and second electrification layers provided on the first and second electrodes, respectively, and a light source provided to irradiate light onto the second electrification layer. Herein, the second electrification layer includes a metallic material configured to generate surface plasmon resonance due to light of a desired wavelength, and the light source irradiates the light of the desired wavelength configured to generate the surface plasmon resonance, onto the second electrification layer.

公开(公告)号：US20180024668A1

公开(公告)日：2018-01-25

申请号：US15403491

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Jae-Young KIM ,  Hyeonjin SHIN ,  Alum JUNG

IPC: G06F3/044 ,  G02F1/167 ,  G02F1/01 ,  H02N1/04

CPC classification number: G06F3/044 ,  G02F1/0136 ,  G02F1/167 ,  G06F3/041 ,  H02N1/04

Abstract: Example embodiments relate to a triboelectric device including first and second electrodes that are spaced apart from each other, a charging layer provided on the first electrode, a display layer, which is provided between the first and second electrodes, configured to implement an image according to a change in an electric field between the first and second electrodes, and a charging member charged with an opposite polarity to the polarity of the charging layer by contacting the charging layer, wherein the triboelectric device is configured to implement the image according to the change in the electric field between the first and second electrodes in a contact area of the charging member and the charging layer.

公开(公告)号：US20160359429A1

公开(公告)日：2016-12-08

申请号：US14843020

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Seongjun PARK

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Example embodiments relate to triboelectric generators that include a first electrode and a triboelectric material layer facing first electrode, and a self-assembled monolayer that is combined with a surface of the first electrode or a surface of the triboelectric material layer between the first electrode and the triboelectric material layer. The self-assembled monolayer is formed of or include a material that includes a silane group, a silanol group, or a thiol group according to a material to be combined.

Abstract translation: 示例性实施例涉及摩擦电发生器，其包括面向第一电极的第一电极和摩擦电材料层，以及自组装单层，其与第一电极的表面或摩擦电材料层的表面在第一电极和 摩擦材料层。 根据待组合的材料，自组装单层由或包括包含硅烷基，硅烷醇基或硫醇基的材料形成或包括。