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264 条记录 (耗时 0.036 秒)

    Microminiature moving device
    61.
    发明授权
    Microminiature moving device 有权
    微型移动装置

    公开(公告)号：US07973373B2

    公开(公告)日：2011-07-05

    申请号：US12315363

    申请日：2008-12-01

    申请人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    发明人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    IPC分类号： H01L27/14

    CPC分类号： B81C1/00825 ,  B81B7/0029 ,  B81B2201/045 ,  B81B2203/033 ,  G02B26/0841 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T307/865

    摘要： A microminiature moving device has disposed on a single-crystal silicon substrate movable elements such as a movable rod and a movable comb electrode that are displaceable in parallel to the substrate surface and stationary parts that are fixedly secured to the single -crystal silicon substrate with an insulating layer sandwiched between. Depressions are formed in the surface regions of the single-crystal silicon substrate where no stationary parts are present and the movable parts are positioned above the depressions. The depressions form gaps large enough to prevent foreign bodies from causing shorts and malfunctioning of the movable parts.

    摘要翻译： 微型移动装置设置在单晶硅衬底上，可移动元件如可移动杆和可移动梳状电极可平行移动到衬底表面，固定部分固定固定在单晶硅衬底上 绝缘层夹在中间。 在单晶硅衬底的不存在固定部分并且可移动部件位于凹部上方的表面区域中形成凹陷。 凹陷形成足够大的间隙，以防止异物引起可动部件的短路和故障。

    Microminiature moving device and method of making the same
    65.
    发明授权
    Microminiature moving device and method of making the same 失效
    微型移动装置及其制作方法

    公开(公告)号：US07476948B2

    公开(公告)日：2009-01-13

    申请号：US11069184

    申请日：2005-02-28

    申请人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    发明人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    IPC分类号： H01L29/82

    CPC分类号： B81C1/00825 ,  B81B7/0029 ,  B81B2201/045 ,  B81B2203/033 ,  G02B26/0841 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T307/865

    摘要： In a microminiature moving device that has disposed, on a single-crystal silicon substrate, movable elements (a movable rod 46, a movable comb electrode 49, etc.) displaceable in parallel to the substrate surface and stationary parts (a stationary part 40a, etc.), the stationary parts are fixedly secured to the single-crystal silicon substrate 61 with an insulating layer 62 sandwiched therebetween, and depressions 64 are formed in those surface regions of the single-crystal silicon substrate 61 where no stationary parts are present, and the movable parts are positioned above the depressions 64. The depressions 64 form gaps 50 large enough to prevent foreign bodies from causing troubles such as malfunction of the movable parts and shoring.

    摘要翻译： 在微单元移动装置中，在单晶硅基板上设置可移动的元件（可动杆46，活动梳状电极49等），其可平行于基板表面和静止部分（静止部分40a， 等等）时，固定部分被固定地固定在单晶硅衬底61上，绝缘层62夹在它们之间，在单晶硅衬底61的不存在静止部分的那些表面区域形成凹陷64， 并且可动部件位于凹部64的上方。凹部64形成足够大的间隙50，以防止异物引起诸如可移动部件和支撑件的故障的麻烦。

    Method of making microminiature moving device
    66.
    发明授权
    Method of making microminiature moving device 失效
    制作微型移动装置的方法

    公开(公告)号：US07476561B2

    公开(公告)日：2009-01-13

    申请号：US11407468

    申请日：2006-04-19

    申请人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    发明人： Keiichi Mori ,  Yoshichika Kato ,  Satoshi Yoshida ,  Kenji Kondou ,  Yoshihiko Hamada ,  Osamu Imaki

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00825 ,  B81B7/0029 ,  B81B2201/045 ,  B81B2203/033 ,  G02B26/0841 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T307/865

    摘要： In a microminiature moving device that has disposed, on a single-crystal silicon substrate, movable elements (a movable rod 46, a movable comb electrode 49, etc.) displaceable in parallel to the substrate surface and stationary parts (a stationary part 40a, etc.), the stationary parts are fixedly secured to the single-crystal silicon substrate 61 with an insulating layer 62 sandwiched therebetween, and depressions 64 are formed in those surface regions of the single-crystal silicon substrate 61 where no stationary parts are present, and the movable parts are positioned above the depressions 64. The depressions 64 form gaps 50 large enough to prevent foreign bodies from causing troubles such as malfunction of the movable parts and shoring.

    摘要翻译： 在微单元移动装置中，在单晶硅基板上设置可移动的元件（可动杆46，活动梳状电极49等），其可平行于基板表面和静止部分（静止部分40a， 等等）时，固定部分被固定地固定在单晶硅衬底61上，绝缘层62夹在它们之间，在单晶硅衬底61的不存在静止部分的那些表面区域形成凹陷64， 并且可动部件位于凹部64的上方。凹部64形成足够大的间隙50，以防止异物引起诸如可移动部件和支撑件的故障的麻烦。

    SEALED BATTERY AND MANUFACTURING METHOD THEREFOR
    68.
    发明申请
    SEALED BATTERY AND MANUFACTURING METHOD THEREFOR 有权
    密封电池及其制造方法

    公开(公告)号：US20090004561A1

    公开(公告)日：2009-01-01

    申请号：US12145039

    申请日：2008-06-24

    申请人： Kenji Nansaka ,  Yasutomo Taniguchi ,  Yasuhiro Yamauchi ,  Toshiyuki Nohma ,  Kenji Inagaki ,  Satoshi Yoshida ,  Takashi Kondou

    发明人： Kenji Nansaka ,  Yasutomo Taniguchi ,  Yasuhiro Yamauchi ,  Toshiyuki Nohma ,  Kenji Inagaki ,  Satoshi Yoshida ,  Takashi Kondou

    IPC分类号： H01M2/08 ,  H01M4/82

    CPC分类号： H01M2/263 ,  H01M2/1653 ,  H01M2/266 ,  H01M4/661 ,  H01M10/05 ,  Y10T29/49108

    摘要： The present invention's manufacturing method for a sealed battery includes: a process whereby a sealed battery application electrode assembly 11 is formed that has multiple positive electrode substrate exposed portions 14 at one end and multiple negative electrode substrate exposed portions 15 at the other end; a process whereby the negative electrode collector 181 and negative electrode collector receiving part 183 are brought against both surfaces of the part to be welded on at least the negative electrode substrate exposed portions 15, with tape 23a constituted of thermodeposited resin and having an opening 231 in the center being interposed; and a process whereby resistance welding is effected by passing current between the negative electrode collector 181 and negative electrode collector receiving part 183 positioned at the two sides.

    摘要翻译： 本发明的密封电池的制造方法包括：形成密封电池用电极组件11的工序，该电池用电极组件11的一端具有多个正极基板露出部14，另一端具有多个负极基板露出部15; 至少负极基板露出部15将负极集电体181和负极集电体容纳部183的两面朝向被焊接部的两面，由热沉积树脂构成并具有开口231的处理 中心被插入; 以及通过使位于两侧的负极集电体181和负极集电体容纳部183之间的电流通过来进行电阻焊接的工序。

    Silicon-carbide nanostructure and method for producing the silicon-carbide nanostructure
    69.
    发明申请
    Silicon-carbide nanostructure and method for producing the silicon-carbide nanostructure 审中-公开
    碳化硅纳米结构和碳化硅纳米结构的制造方法

    公开(公告)号：US20080280104A1

    公开(公告)日：2008-11-13

    申请号：US11978559

    申请日：2007-10-30

    申请人： Kentaro Komori ,  Satoshi Yoshida ,  Kazumi Ogawa

    发明人： Kentaro Komori ,  Satoshi Yoshida ,  Kazumi Ogawa

    IPC分类号： B32B5/16 ,  H01B1/04

    CPC分类号： C30B29/36 ,  B82Y30/00 ,  B82Y40/00 ,  C30B25/105 ,  C30B29/605 ,  Y10T428/24421 ,  Y10T428/2982

    摘要： A method for producing a silicon-carbide nanostructure, which includes steps of: irradiating a carbon-source supplied to a reaction chamber at a pressure of 1. Pa to 70 Pa with microwaves of 0.5 kW to 3 kW; generating plasma in a space above the silicon substrate at a temperature of 350° C. to 600° C.; and forming a silicon-carbide nanostructure having cone-shaped silicon-carbide aggregates which are scattered on and protruded from a surface of a silicon substrate. The silicon-carbide aggregates have a crystal structure of 2H α-siC.

    摘要翻译： 一种碳化硅纳米结构体的制造方法，其特征在于，包括以下步骤：以0.5Pa〜3kw的微波在1Pa〜70Pa的压力下照射供给反应室的碳源。 在350℃至600℃的温度下在硅衬底上的空间中产生等离子体; 以及形成具有锥形碳化硅聚集体的碳化硅纳米结构体，其散射在硅衬底的表面上并从硅衬底的表面突出。 碳化硅聚集体具有2Hα-siC的晶体结构。