公开(公告)号：US20240109785A1

公开(公告)日：2024-04-04

申请号：US18536313

申请日：2023-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: C01G9/00 ,  H01L29/66 ,  H01L29/786

CPC classification number: C01G9/006 ,  H01L29/66969 ,  H01L29/7869 ,  B82Y30/00

Abstract: A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.

公开(公告)号：US20240107865A1

公开(公告)日：2024-03-28

申请号：US18275431

申请日：2022-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Hiroki ADACHI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Naoto KUSUMOTO ,  Kensuke YOSHIZUMI ,  Shunpei YAMAZAKI

IPC: H10K71/16 ,  C23C14/04 ,  C23C14/56

CPC classification number: H10K71/166 ,  C23C14/042 ,  C23C14/566

Abstract: Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

公开(公告)号：US20240107854A1

公开(公告)日：2024-03-28

申请号：US18534949

申请日：2023-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Kensuke YOSHIZUMI

IPC: H10K59/40 ,  G02F1/1333 ,  G06F3/041 ,  G06F3/044 ,  H01L21/683 ,  H01L21/82 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H10K50/842 ,  H10K59/12 ,  H10K59/38 ,  H10K59/60 ,  H10K71/80

CPC classification number: H10K59/40 ,  G02F1/13338 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/0445 ,  H01L21/6835 ,  H01L21/82 ,  H01L27/1218 ,  H01L27/15 ,  H01L29/7869 ,  H10K50/8426 ,  H10K59/12 ,  H10K59/38 ,  H10K59/60 ,  H10K71/80 ,  G02F1/13606 ,  G06F2203/04103

Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

公开(公告)号：US20240105853A1

公开(公告)日：2024-03-28

申请号：US18524033

申请日：2023-11-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78648

Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

公开(公告)号：US20240105137A1

公开(公告)日：2024-03-28

申请号：US18524077

申请日：2023-11-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI

IPC: G09G3/36 ,  G02F1/1337 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G09G3/3648 ,  G02F1/133753 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1225 ,  H10K50/12

Abstract: A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a purality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10zA/μm at room termperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100zA/μm per micrometer in the channel width.

公开(公告)号：US20240096243A1

公开(公告)日：2024-03-21

申请号：US18515655

申请日：2023-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Taiki NONAKA ,  Daiki NAKAMURA ,  Nozomu SUGISAWA ,  Kazuhiko FUJITA ,  Shunpei YAMAZAKI

IPC: G09F9/30 ,  G06F1/16 ,  H05K5/00 ,  H05K5/02 ,  H10K59/12 ,  H10K77/10

CPC classification number: G09F9/30 ,  G06F1/1607 ,  H05K5/0017 ,  H05K5/0226 ,  H10K59/12 ,  H10K77/111

Abstract: A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region, a first support, and a second support, the display region includes a first region, a second region, and a third region, the first region and the second region each have a belt-like shape extending in one direction, and the third region is sandwiched between the first region and the second region. The first support overlaps with the first region and is less likely to be warped than the third region, and the second support overlaps with the second region and is less likely to be warped than the third region. The second support can pivot on an axis extending in the one direction with respect to the first support.

公开(公告)号：US20240090303A1

公开(公告)日：2024-03-14

申请号：US18273085

申请日：2022-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Yasuhiro NIIKURA ,  Shunpei YAMAZAKI

IPC: H10K59/00 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/771 ,  H10K39/34 ,  H10K59/1201

Abstract: A display device having a function of detecting an object that is in contact with or approaches a display portion is provided. The display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second functional layer, a light-receiving layer, the common layer, and the common electrode. The first functional layer includes one of a hole-injection layer and an electron-injection layer. The second functional layer includes one of a hole-transport layer and an electron-transport layer. The common layer has a function of the other of the hole-injection layer and the electron-injection layer in the light-emitting element and has a function of the other of the hole-transport layer and the electron-transport layer in the light-receiving element.

公开(公告)号：US20240085944A1

公开(公告)日：2024-03-14

申请号：US18371552

申请日：2023-09-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA

IPC: G06F1/16

CPC classification number: G06F1/1601 ,  G06F1/1626 ,  G06F1/1637 ,  G02F1/133308

Abstract: A display device includes a display panel mounted on a curved surface, and driver circuits including circuit elements which are mounted on a plurality of plane surfaces provided on the back of the curved surface in a stepwise shape along the curved surface.

公开(公告)号：US20240079499A1

公开(公告)日：2024-03-07

申请号：US18381668

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H10K59/1213

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20240065038A1

公开(公告)日：2024-02-22

申请号：US18271582

申请日：2022-01-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi SEO

IPC: H10K59/122 ,  H10K50/15 ,  H10K50/17 ,  H10K59/12 ,  H10K59/131 ,  H10K59/35 ,  H10K59/80 ,  H10K71/13 ,  H10K71/60 ,  H10K77/10

CPC classification number: H10K59/122 ,  H10K50/15 ,  H10K50/17 ,  H10K59/1201 ,  H10K59/131 ,  H10K59/35 ,  H10K59/80515 ,  H10K71/135 ,  H10K71/60 ,  H10K77/111 ,  H10K2102/351

Abstract: A display device in which a puddle in the vicinity of a partition of a light-emitting element is reduced when a light-emitting layer is formed by a wet process is provided. The display device includes a first anode; a second anode adjacent to the first anode in an X direction; a third anode adjacent to the first anode in a Y direction; a hole-injection layer provided across the first anode to the third anode; a partition provided over the hole-injection layer; a first light-emitting layer; a second light-emitting layer; a third light-emitting layer; and a cathode. The partition includes, in a top view, a first region positioned between the first anode and the third anode and extending in the X direction, and a second region positioned between the first anode and the second anode and extending in the Y direction. The height of the first region is larger than the height of the second region in a cross-sectional view of the partition.