公开(公告)号：US20080111203A1

公开(公告)日：2008-05-15

申请号：US11558883

申请日：2006-11-10

Applicant: Shaoher X. Pan ,  Vlad Novotny

Inventor： Shaoher X. Pan ,  Vlad Novotny

IPC: H01L29/84 ,  H01L21/52

CPC classification number: B81C1/00285 ,  G02B26/0841 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S257/913 ,  H01L2924/00

Abstract: An encapsulated device includes a micro device on a substrate, a cover bonded to the substrate thereby forming a chamber to encapsulate the micro device, and a desiccant material on the cover and in the chamber. An anti-stiction material is absorbed in the desiccant material.

Abstract translation: 封装装置包括在基板上的微型装置，与基板结合的盖，从而形成用于封装微型装置的腔室，以及在盖子和腔室中的干燥剂材料。 抗静电材料被吸收在干燥剂材料中。

公开(公告)号：US20080100904A1

公开(公告)日：2008-05-01

申请号：US11553914

申请日：2006-10-27

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: G02B26/00

CPC classification number: G02B26/0841

Abstract: A micro mirror device includes a hinge supported by a substrate and a mirror plate tiltable around the hinge. The hinge can include an alloy selected from the group consisting of a titanium-nickel alloy having a titanium composition between about 30% to 70%, a titanium-aluminum alloy having a titanium composition between about 30% to 70%, an aluminum-copper alloy having a copper composition between about 5% to 20%, and an aluminum titanium nitride having a nitrogen composition in the range of 0 to about 15%.

Abstract translation: 微镜装置包括由基板支撑的铰链和可围绕铰链倾斜的镜板。 铰链可以包括选自由钛组成在约30％至70％之间的钛 - 镍合金，钛组成在约30％至70％之间的钛 - 铝合金，铝 - 铜 铜组成在约5％至20％之间的合金和氮组成在0至约15％范围内的氮化钛。

公开(公告)号：US20080055703A1

公开(公告)日：2008-03-06

申请号：US11427327

申请日：2006-06-28

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: G02B26/00

CPC classification number: G02B26/0841 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/112

Abstract: A method for applying anti-stiction material to a micro device on a substrate includes introducing anti-stiction material on a surface of an encapsulation device or a surface of the substrate and sealing at least a portion of the encapsulation device to the surface of the substrate to form a chamber to encapsulate the micro device and the anti-stiction material. The micro device includes a first component and a second component. The first component is moveable and is configured to contact the second component. The method also includes vaporizing the anti-stiction material and depositing the anti-stiction material on a surface of the first component or a surface of the second component after vaporizing the anti-stiction material to prevent stiction between the first component and the second component.

Abstract translation: 将抗静电材料施加到基板上的微器件的方法包括将抗静电材料引入到封装装置的表面或基板的表面上，并将至少一部分封装装置密封到基板的表面 以形成包封微型装置和抗静电材料的室。 微型装置包括第一部件和第二部件。 第一组件是可移动的并被配置成与第二组件接触。 该方法还包括在蒸发抗静电材料之后蒸发抗静电材料并将抗静电材料沉积在第一组分或第二组分的表面上，以防止第一组分和第二组分之间的粘结。

公开(公告)号：US20080024857A1

公开(公告)日：2008-01-31

申请号：US11461413

申请日：2006-07-31

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: G02B26/08

CPC classification number: H04N9/3129 ,  G02B26/123 ,  G02B26/124 ,  G02B26/125 ,  G03B21/008 ,  G03B21/14 ,  G03B21/208 ,  G03B33/12 ,  H04N5/7458 ,  H04N9/3108 ,  H04N9/3111 ,  H04N9/3114

Abstract: A display system includes a transparent tapered plate comprising a first face, a second face, and a third face. The first face is substantially smaller than the second face and the third face. The display system also includes a row of tiltable mirror plates each comprising a reflective surface. Each of the mirror plates is configured to tilt to an “on” position to reflect incident light in an “on” direction or to tilt to an “off” position to reflect incident light in an “off” direction. An optical scanning system is configured to control the direction of the light reflected by the mirror plates in the “on” direction. The row of the tiltable mirror plates, optical scanning system and the tapered plate are configured to allow the light reflected by the row of mirror plates in the “on” direction to enter the tapered plate at the first face, be reflected by the second face, and produce a line of image pixels on the third face. The optical scanning system is configured to scan the line of image pixels across the third face to produce a display image.

Abstract translation: 显示系统包括透明锥形板，包括第一面，第二面和第三面。 第一面基本上小于第二面和第三面。 显示系统还包括一排每个包括反射表面的可倾斜镜板。 每个镜板被配置为倾斜到“开”位置以将入射光反射到“开”方向或倾斜到“关”位置以将入射光反射到“关”方向。 光学扫描系统被配置为控制由“反光板”反射的光在“向”方向上的方向。 可倾斜镜板，光学扫描系统和锥形盘的行被配置为允许由“行”方向的一列反射镜反射的光在第一面进入锥形板，被第二面反射 并且在第三面上产生一行图像像素。 光学扫描系统被配置为扫描跨越第三面的图像像素线以产生显示图像。

公开(公告)号：US07245415B2

公开(公告)日：2007-07-17

申请号：US10974461

申请日：2004-10-25

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: G02F26/00

CPC classification number: G02B26/0841

Abstract: A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro mirror array with a high electrostatic efficiency and low surface adhesion control substrate.

Abstract translation: 通过将高有效反射区域填充率和非衍射微镜阵列与高静电效率和低表面粘附控制基板耦合来制造用于显示和印刷的高对比度空间光调制器。

公开(公告)号：US06827869B2

公开(公告)日：2004-12-07

申请号：US10194167

申请日：2002-07-11

Applicant: Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

Inventor： Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

IPC: H01L21302

CPC classification number: H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

Abstract translation: 本公开涉及我们发现用于蚀刻衬底中的多部分空腔的特别有效的方法。 该方法提供了首先蚀刻成形开口，在成形开口的内表面的至少一部分上沉积保护层，然后直接在成形开口下面蚀刻成形腔，并与成形开口连续连通。 保护层在蚀刻成形腔体期间保护成形开口的蚀刻轮廓，从而如果需要，成形开口和成形腔体可以被蚀刻以具有不同的形状。 在本发明方法的特定实施例中，横向蚀刻阻挡层和/或注入的蚀刻停止点也用于引导蚀刻工艺。 本发明的方法可以应用于需要或期望提供具有不同形状的成形开口和下面的成形腔的任何应用。 只要需要对成形开口的尺寸进行严格控制，该方法也是有用的。

公开(公告)号：US06787054B2

公开(公告)日：2004-09-07

申请号：US10358086

申请日：2003-02-03

Applicant: Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

Inventor： Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

IPC: C23F100

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

Abstract: A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.

Abstract translation: 用于蚀刻基板并去除沉积在蚀刻室中的表面上的蚀刻残余物的方法具有两个阶段。 在第一阶段中，在腔室中设置通电的第一处理气体，在第二阶段中，在室中设置通电的第二处理气体。 通电的第一工艺气体包括SF 6和Ar，SF 6与第一工艺气体的其它组分的体积流量比为约5:1至约1:10。 通电的第二工艺气体包括CF 4和Ar，CF 4与第二工艺气体的其它组分的体积流量比为约1:0至约1:10。

公开(公告)号：US06527968B1

公开(公告)日：2003-03-04

申请号：US09536057

申请日：2000-03-27

Applicant: Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

Inventor： Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

IPC: B44C122

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

Abstract: A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask layer on the substrate includes a first stage of providing a highly chemically reactive process gas in the chamber 105 to etch the nitride layer 32 and/or an underlying oxide layer 34, and a second stage of providing a less chemically reactive process gas in the chamber to etch the nitride layer 32 and/or the oxide layer 34 at a slower rate than the first stage. The first and second stage process gases may each comprise a fluorine containing gas, with the fluorine ratio of the first gas higher than the fluorine ratio of the second gas.

Abstract translation: 用于在蚀刻室105中蚀刻基板25并同时去除沉积在壁110的表面上的蚀刻残留物和蚀刻室105的部件的方法。在一种形式中，将氮化物掩模层打开的两阶段方法 衬底包括在室105中提供高度化学反应的工艺气体以蚀刻氮化物层32和/或下面的氧化物层34的第一阶段，以及在室中提供较少化学反应性工艺气体以蚀刻的第二阶段 氮化物层32和/或氧化物层34的速度比第一级慢。 第一和第二阶段工艺气体可以各自包含含氟气体，其中第一气体的氟比率高于第二气体的氟比率。

公开(公告)号：US6136211A

公开(公告)日：2000-10-24

申请号：US969122

申请日：1997-11-12

Applicant: Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

Inventor： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  B08B9/00

CPC classification number: H01L21/02071 ,  Y10S438/905

Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

Abstract translation: 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残余物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

公开(公告)号：US5801386A

公开(公告)日：1998-09-01

申请号：US653212

申请日：1996-05-28

Applicant: Valentin N. Todorov ,  Yoshi Tanase ,  Xue-Yu Qian ,  Arthur H. Sato ,  Peter Loewenhardt ,  Yan Ye ,  Shaoher X. Pan ,  Dragan Podlesnik

Inventor： Valentin N. Todorov ,  Yoshi Tanase ,  Xue-Yu Qian ,  Arthur H. Sato ,  Peter Loewenhardt ,  Yan Ye ,  Shaoher X. Pan ,  Dragan Podlesnik

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32935

Abstract: Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.

Abstract translation: 用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。 该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。 每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。 第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。 使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。 集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。