公开(公告)号：US20120008381A1

公开(公告)日：2012-01-12

申请号：US13233906

申请日：2011-09-15

申请人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko NAGASE ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  G06K19/077 ,  H01L29/82

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms

摘要翻译： 通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层 并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层 。 自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

公开(公告)号：US20110211389A1

公开(公告)日：2011-09-01

申请号：US13101818

申请日：2011-05-05

申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

公开(公告)号：US07965544B2

公开(公告)日：2011-06-21

申请号：US12844144

申请日：2010-07-27

申请人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.

摘要翻译： 当执行读取时，可以防止无意写入。 用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

公开(公告)号：US07957184B2

公开(公告)日：2011-06-07

申请号：US12790171

申请日：2010-05-28

申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.

摘要翻译： 本发明提供一种自旋注入型的低电阻磁阻元件。 形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面 。 通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

公开(公告)号：US07938617B2

公开(公告)日：2011-05-10

申请号：US11599488

申请日：2006-11-15

申请人： Tomohiro Naruse ,  Hideki Akiniwa ,  Hiroaki Yoda ,  Minoru Hiroshima

发明人： Tomohiro Naruse ,  Hideki Akiniwa ,  Hiroaki Yoda ,  Minoru Hiroshima

IPC分类号： F04D29/00

CPC分类号： F04D1/006 ,  F04D15/0088 ,  F04D29/167

摘要： According to the present invention, along the right and left sides of a rotary shaft, flat faces that serve as sealing faces are formed at the circumferential edges, on the suction chamber side, of semicircular division plates, which define suction chambers and a discharge chamber of a volute casing that is divided into two segments. Two disc plates are prepared as pressure test tools, and are positioned on the right and left sides of the rotary shaft so that they contact the flat faces that are formed around the circumferential edges of the division plates near the suction chambers. The two disc plates are then securely connected to a member in the axial direction. In addition, a bolt fastening structure, which is axially tightened by the member that connects the disc plates axially, is provided in at least one axial direction.

摘要翻译： 根据本发明，沿着旋转轴的左右两侧，形成有作为密封面的平面形成在半圆形分隔板的吸入室侧的周缘部，形成吸入室和排出室 的蜗壳，分为两段。 制备两个盘片作为压力测试工具，并且位于旋转轴的左侧和右侧，使得它们接触形成在吸附室附近的分隔板周边的平面。 然后，两个盘片在轴向上牢固地连接到构件。 此外，在至少一个轴向方向上设置有由轴向连接盘片的构件轴向紧固的螺栓紧固结构。

公开(公告)号：US07924607B2

公开(公告)日：2011-04-12

申请号：US12047749

申请日：2008-03-13

申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

公开(公告)号：US07791843B2

公开(公告)日：2010-09-07

申请号：US12498202

申请日：2009-07-06

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

摘要翻译： 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US07518906B2

公开(公告)日：2009-04-14

申请号：US11378351

申请日：2006-03-20

申请人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

发明人： Sumio Ikegawa ,  Masahiko Nakayama ,  Tadashi Kai ,  Eiji Kitagawa ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

摘要翻译： 根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。 自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。 第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

公开(公告)号：US07515386B2

公开(公告)日：2009-04-07

申请号：US11389175

申请日：2006-03-27

申请人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

发明人： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US20080253174A1

公开(公告)日：2008-10-16

申请号：US12047749

申请日：2008-03-13

申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。