公开(公告)号：US09166065B2

公开(公告)日：2015-10-20

申请号：US13419011

申请日：2012-03-13

申请人： Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

发明人： Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/12 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  G11C11/16

CPC分类号： H01L29/82 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/126 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.

摘要翻译： 根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜 平面和第一磁性膜与第二磁性膜之间的非磁性膜。 第一和第二磁性膜中的至少一个包括第一磁性层。 第一磁性层包括稀土金属，过渡金属和硼。

公开(公告)号：US08981507B2

公开(公告)日：2015-03-17

申请号：US13534673

申请日：2012-06-27

申请人： Shigeki Takahashi ,  Kyoichi Suguro ,  Junichi Ito ,  Yuichi Ohsawa ,  Hiroaki Yoda

发明人： Shigeki Takahashi ,  Kyoichi Suguro ,  Junichi Ito ,  Yuichi Ohsawa ,  Hiroaki Yoda

IPC分类号： H01L43/12

CPC分类号： H01L43/12

摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.

摘要翻译： 根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。 多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。 磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。 该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。

公开(公告)号：US08878317B2

公开(公告)日：2014-11-04

申请号：US13210678

申请日：2011-08-16

申请人： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Minoru Amano ,  Daisuke Saida ,  Junichi Ito ,  Yuichi Ohsawa ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Hiroaki Yoda

IPC分类号： H01L29/82 ,  H01L43/10 ,  H01F10/32 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

摘要翻译： 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US08737122B2

公开(公告)日：2014-05-27

申请号：US13416076

申请日：2012-03-09

申请人： Daisuke Saida ,  Minoru Amano ,  Tazumi Nagasawa ,  Yuichi Ohsawa ,  Junichi Ito

发明人： Daisuke Saida ,  Minoru Amano ,  Tazumi Nagasawa ,  Yuichi Ohsawa ,  Junichi Ito

IPC分类号： G11C11/15 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.

摘要翻译： 根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。 磁存储元件包括包括第一和第二堆叠单元的堆叠体。 第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二铁磁层具有由通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。 振荡的频率根据第二铁磁层的磁化方向而变化。 控制单元包括读出第二铁磁层的磁化的读取单元。

公开(公告)号：US08716034B2

公开(公告)日：2014-05-06

申请号：US13226868

申请日：2011-09-07

申请人： Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

发明人： Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L29/82

摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

摘要翻译： 根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层， 具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射 层，图案后。

公开(公告)号：US08080478B2

公开(公告)日：2011-12-20

申请号：US12873652

申请日：2010-09-01

申请人： Yuichi Ohsawa ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata

发明人： Yuichi Ohsawa ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata

IPC分类号： H01L21/00

CPC分类号： H01L21/0337 ,  H01L43/12

摘要： According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film containing a second material on the first film; a step of performing anisotropic etching of the first and second films in a way that forms a sidewall layer including the first and second films on the side surface of the pattern and removes the first and second films on any location other than the sidewall layer; a step of performing isotropic etching of the first film of the sidewall layer; and a step of removing the pattern.

摘要翻译： 根据一个实施例，制造掩模的方法包括：在基板上形成图案的步骤; 形成覆盖图案的顶表面和侧表面并包含第一材料的第一膜的步骤; 在所述第一膜上形成含有第二材料的第二膜的步骤; 以在图案的侧表面上形成包括第一和第二膜的侧壁层的方式进行第一和第二膜的各向异性蚀刻的步骤，并且除了侧壁层之外的任何位置去除第一和第二膜; 对侧壁层的第一膜进行各向同性蚀刻的步骤; 以及去除图案的步骤。

公开(公告)号：US08049998B2

公开(公告)日：2011-11-01

申请号：US12073171

申请日：2008-02-29

申请人： Yuichi Ohsawa ,  Shiho Nakamura

发明人： Yuichi Ohsawa ,  Shiho Nakamura

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11C11/16 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12271

摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.

摘要翻译： 磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。 连接部不夹在第二铁磁层和磁偏置层之间。 连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。 一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

公开(公告)号：US20090207724A1

公开(公告)日：2009-08-20

申请号：US12320955

申请日：2009-02-10

申请人： Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

发明人： Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

IPC分类号： G11B3/70

CPC分类号： G11B25/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.

摘要翻译： 磁存储器设置有存储单元。 存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。 磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层 和磁记录层。 互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。 接地线相对于互连设置在与磁记录元件相对的一侧上。

公开(公告)号：US20090098412A1

公开(公告)日：2009-04-16

申请号：US12285429

申请日：2008-10-03

申请人： Yuichi Ohsawa ,  Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida

发明人： Yuichi Ohsawa ,  Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida

IPC分类号： G11B5/33

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.

摘要翻译： 磁记录元件包括具有表面和一对电极的多层。 多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。 多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。 第三磁性层设置在第一和第二磁性层之间。 第三铁磁层的磁化方向是可变的。 第一中间层设置在第一和第三磁性层之间。 第二中间层设置在第二和第三磁性层之间。 该对电极能够将与表面大致垂直的方向流动的电流供给到多层。 在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

公开(公告)号：US20080213627A1

公开(公告)日：2008-09-04

申请号：US12073171

申请日：2008-02-29

申请人： Yuichi Ohsawa ,  Shiho Nakamura

发明人： Yuichi Ohsawa ,  Shiho Nakamura

IPC分类号： G11B5/39 ,  B32B7/04 ,  B32B15/04

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11C11/16 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/12271

摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.

摘要翻译： 磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。 连接部不夹在第二铁磁层和磁偏置层之间。 连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。 一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。