公开(公告)号：US08698143B2

公开(公告)日：2014-04-15

申请号：US13567327

申请日：2012-08-06

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US08547493B2

公开(公告)日：2013-10-01

申请号：US12899265

申请日：2010-10-06

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： G02F1/136 ,  G09G3/36 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45

摘要： An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 本发明的目的是减少在包括氧化物半导体层的薄膜晶体管中氧化物半导体层与与氧化物半导体层电连接的源极和漏极电极层之间的接触电阻。 源极和漏极电极层具有两层或更多层的堆叠结构。 在该堆叠层中，与氧化物半导体层接触的层是薄的铟层或薄的铟 - 合金层。 注意，氧化物半导体层含有铟。 使用选自Al，Cr，Cu，Ta，Ti，Mo和W的元素来形成源极和漏极电极层中的第二层或第二层和后续层中的任何一层，包含任何这些元素作为组分的合金， 合并这些元素中的任何一种的合金等。

公开(公告)号：US08541780B2

公开(公告)日：2013-09-24

申请号：US12872823

申请日：2010-08-31

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

摘要翻译： 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

公开(公告)号：US08492764B2

公开(公告)日：2013-07-23

申请号：US12848375

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5278 ,  H01L2251/5323

摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管， 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08492756B2

公开(公告)日：2013-07-23

申请号：US12683695

申请日：2010-01-07

申请人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L29/24 ,  H01L29/22 ,  H01L21/34

CPC分类号： H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.

摘要翻译： 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氮氧化物膜的氧化物半导体层形成。

公开(公告)号：US08488077B2

公开(公告)日：2013-07-16

申请号：US13363405

申请日：2012-02-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08445905B2

公开(公告)日：2013-05-21

申请号：US13567451

申请日：2012-08-06

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

IPC分类号： H01L29/10

CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

公开(公告)号：US08426034B2

公开(公告)日：2013-04-23

申请号：US11883026

申请日：2006-02-01

申请人： Hisao Ikeda ,  Junichiro Sakata ,  Satoshi Seo ,  Yuji Iwaki ,  Shunpei Yamazaki

发明人： Hisao Ikeda ,  Junichiro Sakata ,  Satoshi Seo ,  Yuji Iwaki ,  Shunpei Yamazaki

IPC分类号： H01L51/54

CPC分类号： H05B33/14 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1014 ,  H01L51/0059 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5278

摘要： The cluster is formed in such a way that two molecules of arylamine compounds in each of which two arylamines each having one phenyl group and two aryl groups bonded with a nitrogen atom form a bisphenyl bond through the respective phenyl groups are arranged in parallel, thereby forming a dimolecular body and that the dimolecular body is coordinated to metal oxide. The light-emitting element has a layer including the cluster. A manufacturing method thereof includes the steps of vaporizing simultaneously metal oxide and an arylamine compound in which two arylamines each having one phenyl group and two aryl groups bonded with a nitrogen atom form a bisphenyl bond through the respective phenyl groups under vacuum and solidifying simultaneously the vaporized metal oxide and arylamine compound.

摘要翻译： 以这样的方式形成簇，其中每个具有一个苯基的两个芳基胺和与氮原子结合的两个芳基的两个芳基胺化合物通过各个苯基形成双苯基，平行布置，从而形成 二分子体，并且二分子体与金属氧化物配位。 发光元件具有包含该簇的层。 其制造方法包括同时蒸发金属氧化物和芳基胺化合物的步骤，其中两个芳基胺各自具有一个苯基和两个与氮原子键合的芳基，在真空下通过各自的苯基形成双苯基，并同时蒸发 金属氧化物和芳基胺化合物。

公开(公告)号：US08394671B2

公开(公告)日：2013-03-12

申请号：US13495481

申请日：2012-06-13

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US08378343B2

公开(公告)日：2013-02-19

申请号：US12835119

申请日：2010-07-13

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Mari Terashima

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Mari Terashima

IPC分类号： H01L29/10

CPC分类号： H01L27/124 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225

摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.

摘要翻译： 提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极 层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。