摘要:
The present invention relates to a memory system having a memory device with two clock lines. One embodiment of the present invention provides a memory system comprising at least one memory device, a memory controller to control operation of the memory device, a first clock line which extends from a write clock output of the memory controller to a clock port of the memory device to provide a clock signal to the memory device, and a second clock line which extends from the clock port of the memory device to a read clock input of the memory controller to forward the clock signal applied to the clock port of the memory device back to a read clock input of the memory controller. The memory device may further comprise a synchronization circuit adapted to receive the clock signal from the memory controller and to, provide an output data synchronized to the forwarded clock signal.
摘要:
The present invention includes a semiconductor memory modules and semiconductor memory systems using the same. The modules divide a conventional DIMM into a series of separate, smaller memory modules. Each memory module includes at least one semiconductor memory chip arranged on a substrate; CAwD signal input lines arranged on the substrate in a first predetermined line number and connecting one of the semiconductor memory chips to CAwD input signal pins on the substrate; and rD signal output lines arranged on the substrate in a second predetermined line number and connecting the one or a last semiconductor memory to a second number of rD output signal pins of the substrate. In a semiconductor memory system including the semiconductor memory modules, each memory module is separately connected to a memory controller by the CAwD signal input linesand the rD signal output lines in a respective point-to-point fashion.
摘要:
A method for setting an address of a rank in a memory module having a number of memory chips distributed along a byte lane includes setting the first memory chip of the byte lane to have a first rank address, generating a second rank address therein from the first rank address, and driving the second rank address to a second one of the memory chips. Alternatively, the first rank address may be driven to the second memory chip, and then, a second rank address is generated in that second memory chip. Further, the second memory chip is set to have the second rank address in response to the driving the second/first rank address. A power-up sequence after voltage supply, or command signals sent via a serial management bus or the command address bus can be used to initiate the setting of ranks. The rank addresses are re-driven to adjacent memory chips by DQ-lines along a byte lane.
摘要:
A circuit system includes a means for controlling a first and a second memory unit by means of a differential control signal. The differential control signal includes a first control signal and a second control signal, which is inverted to the first control signal. Further, the circuit system comprises a differential control signal line, which includes a first signal line for routing the first control signal and a second signal line for routing the second control signal. The first switching unit is connected via the first signal line and the second circuit unit is connected via the second signal line to the means for controlling.
摘要:
The invention relates to a semiconductor memory module having at least one memory chip and a buffer chip, which drives clock, address and command signals to the memory chip and drives data signals to, and receives them from, the memory chip via a module-internal clock, address, command and data bus. The buffer chip forms an interface to an external memory main bus. The data bus lines and/or the clock, command and address bus lines are respectively connected to the buffer chip at their two ends and are capable of being driven by the buffer chip from these two ends. Control means are being provided and set up in such a manner that they respectively match the directions of propagation of the data signals and of the clock, command and address signals on the corresponding bus lines during writing and reading.
摘要:
A memory device for use in a memory module and method for operating the memory device are provided. In one embodiment, the memory device comprises a memory array, a memory access logic for controlling access to the memory array depending on a command data, a command interface for establishing a point to point interconnect to a memory controller and comprising a first and a second command port for receiving first and second command signals indicating the command data and, a repeater unit for receiving the first command signal via the first command port and for forwarding the first command signal to a forwarding port.
摘要:
A semiconductor memory system for the transfer of write and read data signals among interface circuits includes at least one memory device, a memory controller unit and, optionally, a register unit of a semiconductor memory system, wherein the data signals are each transferred in signal bursts of a specific burst length. The system is characterized in that a number of additional bits extending the burst length are transferred together with at least every nth signal burst.
摘要:
A circuit exhibits a signal input, means for determining a reference level on the basis of properties of a signal received at the signal input. In addition, the circuit further exhibits means for evaluating the signal on the basis of the reference level.
摘要:
A connector is described for fixing a plurality of switching assemblies on a substrate. The connector is also for making contact with the plurality of switching assemblies, which have compatible interfaces. The connector has a plurality of receptacle devices with contact elements and internal contact connections between corresponding contact elements, as a result of which, the length of the connections between the switching assemblies is reduced, signal propagation times are shortened and a higher clock rate for operating the switching assemblies is made possible.
摘要:
A memory device has a memory module, a controller, a data bus for connecting the controller and the memory module, a read clock generator, and a read clock bus for connecting the read clock generator, the memory module, and the Controller. The data bus read data from the memory module or writes data into the memory module. The read clock generator is disposed in the memory module, so that the data bus and the read clock bus are substantially symmetric, and generate a read clock for transferring data from the memory module to the controller. The data bus and the read clock bus are configured with respect to each other such that substantially no time delay between read data on the data bus and the read clock on the read clock bus exists at the controller.