公开(公告)号：US08404499B2

公开(公告)日：2013-03-26

申请号：US12761319

申请日：2010-04-15

申请人： Stephen Moffatt

发明人： Stephen Moffatt

IPC分类号： H01L21/66

CPC分类号： H01L21/67115

摘要： Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a variety of advantages including higher efficiency and more rapid response times. Pulse widths are selectable down to under a millisecond but can be for long pulses up to and exceeding a second. LEDs are preferable to tungsten-halogen lamps even in circumstances that allow longer processing times, since LEDs produce light with greater than 50% efficiency and tungsten-halogen lamps operate with less than 5% efficiency.

摘要翻译： 本发明的实施例涉及用于热处理衬底的发光二极管（LED）的衬底处理设备和方法。 这种光源提供了各种优点，包括更高的效率和更快的响应时间。 脉冲宽度可选择低于一毫秒，但可以长达一秒以上的长脉冲。 即使在允许更长处理时间的情况下，LED也优于卤钨灯，因为LED产生效率高于50％的光，而卤素灯以低于5％的效率工作。

公开(公告)号：US20100297856A1

公开(公告)日：2010-11-25

申请号：US12853155

申请日：2010-08-09

申请人： Stephen Moffatt ,  Joseph M. Ranish

发明人： Stephen Moffatt ,  Joseph M. Ranish

IPC分类号： H01L21/268 ,  B23K26/00

CPC分类号： H01L21/324 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/66575

摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

摘要翻译： 本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。 在一个实施例中，使用闪光灯或激光装置将电磁能量的脉冲传送到基板。 脉冲可以是约1nsec至约10msec长，并且每个脉冲具有比熔化基底材料所需的能量更少的能量。 脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。 因此，每个脉冲完成微退火循环。 脉冲可以一次被输送到整个基板，或者一次被传送到基板的一部分。 另外的实施例提供了用于为辐射组件供电的装置，以及用于检测脉冲在衬底上的影响的装置。

公开(公告)号：US20100267174A1

公开(公告)日：2010-10-21

申请号：US12761319

申请日：2010-04-15

申请人： Stephen Moffatt

发明人： Stephen Moffatt

IPC分类号： H01L21/22 ,  G21K5/02 ,  H01L21/66

CPC分类号： H01L21/67115

摘要： Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a variety of advantages including higher efficiency and more rapid response times. Pulse widths are selectable down to under a millisecond but can be for long pulses up to and exceeding a second. LEDs are preferable to tungsten-halogen lamps even in circumstances that allow longer processing times, since LEDs produce light with greater than 50% efficiency and tungsten-halogen lamps operate with less than 5% efficiency.

摘要翻译： 本发明的实施例涉及用于热处理衬底的发光二极管（LED）的衬底处理设备和方法。 这种光源提供了各种优点，包括更高的效率和更快的响应时间。 脉冲宽度可选择低于一毫秒，但可以长达一秒以上的长脉冲。 即使在允许更长处理时间的情况下，LED也优于卤钨灯，因为LED产生效率高于50％的光，而卤素灯以低于5％的效率工作。

公开(公告)号：US07745309B2

公开(公告)日：2010-06-29

申请号：US11463425

申请日：2006-08-09

申请人： Randhir P S Thakur ,  Stephen Moffatt ,  Per-Ove Hansson ,  Steve Ghanayem

发明人： Randhir P S Thakur ,  Stephen Moffatt ,  Per-Ove Hansson ,  Steve Ghanayem

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01J37/32412

摘要： Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.

摘要翻译： 提供了在SOI技术中使用的促进界面结合能的方法。 在一个实施方案中，用于促进界面结合能的方法包括提供第一衬底和第二衬底，其中第一衬底具有形成在其上的氧化硅层和限定在其中的解理面，在硅的表面上进行干洗处理 氧化物层和第二衬底的表面，并且将清洁的第一衬底的氧化硅表面接合到第二衬底的清洁表面。

公开(公告)号：US20090269878A1

公开(公告)日：2009-10-29

申请号：US12420558

申请日：2009-04-08

申请人： Francisco A. Leon ,  Lawrence C. West ,  Yuichi Wada ,  Gregory L. Wojcik ,  Stephen Moffatt

发明人： Francisco A. Leon ,  Lawrence C. West ,  Yuichi Wada ,  Gregory L. Wojcik ,  Stephen Moffatt

IPC分类号： H01L21/20

CPC分类号： G02B6/12004 ,  G02B2006/12061 ,  H01L31/0232 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/1812 ,  Y02E10/50

摘要： A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the trench; forming a second semiconductor layer on the first doped semiconductor layer and extending into the trench, the second semiconductor layer having a conductivity that is less than the conductivity of the first doped semiconductor layer; forming a third doped semiconductor layer on the second semiconductor layer and extending into the trench; removing portions of the first, second and third layers that are above a plane defined by the surface of the substrate to produce an upper, substantially planar surface and expose an upper end of the first doped semiconductor layer in the trench; forming a first electrical contact to the first semiconductor doped layer; and forming a second electrical contact to the third semiconductor doped layer.

摘要翻译： 一种制造检测器的方法，包括：在衬底中形成沟槽，所述衬底具有上表面; 在所述衬底和所述沟槽中形成第一掺杂半导体层; 在所述第一掺杂半导体层上形成第二半导体层并延伸到所述沟槽中，所述第二半导体层的导电率小于所述第一掺杂半导体层的导电性; 在所述第二半导体层上形成第三掺杂半导体层并延伸到所述沟槽中; 去除在由衬底的表面限定的平面之上的第一层，第二层和第三层的部分，以产生上部基本平坦的表面，并且暴露沟槽中的第一掺杂半导体层的上端; 形成第一电接触到第一半导体掺杂层; 以及向所述第三半导体掺杂层形成第二电接触。

公开(公告)号：US20070221640A1

公开(公告)日：2007-09-27

申请号：US11459852

申请日：2006-07-25

申请人： Dean Jennings ,  Alexander N. Lerner ,  Abhilash Mayur ,  Stephen Moffatt ,  Timothy N. Thomas

发明人： Dean Jennings ,  Alexander N. Lerner ,  Abhilash Mayur ,  Stephen Moffatt ,  Timothy N. Thomas

IPC分类号： B23K26/00

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

摘要： The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

摘要翻译： 本发明通常描述了一种更多的装置和各种方法，用于对基底的期望区域进行退火处理。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

公开(公告)号：US20050199825A1

公开(公告)日：2005-09-15

申请号：US11056787

申请日：2005-02-10

申请人： Stephen Moffatt

发明人： Stephen Moffatt

IPC分类号： H01L21/683 ,  H01L21/687 ,  G01F23/00

CPC分类号： H01L21/68757 ,  H01L21/6831

摘要： A wafer chuck is designed to allow the substrate to thermally deform during charged particle beam lithography. The wafer chuck includes a compliant layer disposed over an chuck body. During lithography processing the wafer is electrostatically held in contact with a flexible compliant layer and the wafer is exposed to the charged particle beam resulting in thermal deformation of the wafer. The compliant layer deforms with the substrate and allows the wafer to deform in a predictable manner.

摘要翻译： 设计晶片卡盘以允许基板在带电粒子束光刻期间热变形。 晶片卡盘包括设置在卡盘主体上方的柔顺层。 在光刻处理期间，晶片被静电地保持与柔性柔性层接触，并且晶片暴露于带电粒子束，导致晶片的热变形。 柔性层与衬底变形并允许晶片以可预测的方式变形。

公开(公告)号：US06919150B2

公开(公告)日：2005-07-19

申请号：US10792011

申请日：2004-03-03

申请人： Cheng Guo ,  Stephen Moffatt

发明人： Cheng Guo ,  Stephen Moffatt

IPC分类号： G03F1/20 ,  G03F9/00

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

摘要翻译： 用于形成用于光刻（例如电子束光刻）的掩模组件的方法首先在衬底中形成通过其中的多个开口的一半，然后用可移除的填充材料填充开口。 此后形成开口的另一半，然后填充可移除的填充材料。 在所有开口已经形成和填充之后，在基板上形成支撑膜，并覆盖填充的窗户。 然后在膜上形成掩模层并图案化。 然后从所有窗口中删除填充。

公开(公告)号：US5883391A

公开(公告)日：1999-03-16

申请号：US876434

申请日：1997-06-16

申请人： Babak Adibi ,  Jonathan Gerald England ,  Stephen Moffatt ,  Jose Antonio Marin

发明人： Babak Adibi ,  Jonathan Gerald England ,  Stephen Moffatt ,  Jose Antonio Marin

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/0225 ,  H01J2237/304

摘要： High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.

摘要翻译： 离子注入机中的高能量中性污染可以由束离子中和，因为它们在被再次减速到期望的注入能量之前被暂时加速在电极处。 这种情况发生在例如减速透镜装置中，其包括在相对高的负电位处提供所需聚焦的电极。 通过测量该负电场电极上的电流消耗来监测该污染程度。

公开(公告)号：US09018110B2

公开(公告)日：2015-04-28

申请号：US14112012

申请日：2012-03-29

申请人： Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

发明人： Michael W. Stowell ,  Majeed A. Foad ,  Ralf Hofmann ,  Wolfgang R. Aderhold ,  Stephen Moffatt

IPC分类号： H01L23/66 ,  H01L21/263 ,  H01L21/324 ,  H01L21/67 ,  H05B6/70

CPC分类号： H01L21/263 ,  H01L21/324 ,  H01L21/67115 ,  H05B6/702 ,  H05B6/708

摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

摘要翻译： 提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。 微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。 来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。 内外导体由绝缘材料分开。 由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。 来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。