利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.027 秒)

    APPARATUS FOR THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE
    1.
    发明申请
    APPARATUS FOR THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 审中-公开
    在基材上形成的热处理结构的装置

    公开(公告)号：US20070221640A1

    公开(公告)日：2007-09-27

    申请号：US11459852

    申请日：2006-07-25

    申请人： Dean Jennings ,  Alexander N. Lerner ,  Abhilash Mayur ,  Stephen Moffatt ,  Timothy N. Thomas

    发明人： Dean Jennings ,  Alexander N. Lerner ,  Abhilash Mayur ,  Stephen Moffatt ,  Timothy N. Thomas

    IPC分类号： B23K26/00

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明通常描述了一种更多的装置和各种方法，用于对基底的期望区域进行退火处理。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    Method of thermal processing structures formed on a substrate
    2.
    发明授权
    Method of thermal processing structures formed on a substrate 有权
    在基板上形成的热处理结构的方法

    公开(公告)号：US07569463B2

    公开(公告)日：2009-08-04

    申请号：US11459847

    申请日：2006-07-25

    申请人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    发明人： Ajit Balakrishna ,  Paul Carey ,  Dean Jennings ,  Abhilash Mayur ,  Stephen Moffatt ,  William Schaffer ,  Mark Yam

    IPC分类号： H01L21/04

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

    摘要： The present invention generally describes one or more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

    摘要翻译： 本发明总体上描述了一种或多种用于在衬底的期望区域上进行退火处理的设备和各种方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

    Single axis light pipe for homogenizing slow axis of illumination systems bases on laser diodes
    5.
    发明申请
    Single axis light pipe for homogenizing slow axis of illumination systems bases on laser diodes 有权
    单轴光管，用于均匀化基于激光二极管的照明系统的慢轴

    公开(公告)号：US20060102605A1

    公开(公告)日：2006-05-18

    申请号：US11185649

    申请日：2005-07-20

    申请人： Bruce Adams ,  Dean Jennings ,  Abhilash Mayur ,  Vijay Parihar ,  Joseph Ranish

    发明人： Bruce Adams ,  Dean Jennings ,  Abhilash Mayur ,  Vijay Parihar ,  Joseph Ranish

    IPC分类号： B23K26/06

    CPC分类号： G02B6/003 ,  G02B6/0046 ,  G02B6/0056 ,  G02B6/0068

    摘要： Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.

    摘要翻译： 用于热处理半导体晶片的装置包括布置成沿着慢轴延伸的多个平行列的半导体激光发射器的阵列，多个相应的柱形透镜，覆盖相应行的激光发射器，用于沿着快轴准直来自相应行的光 垂直于慢轴的均质化光管，其具有在第一端处的输入面用于接收来自多个柱面透镜的光和相对端的输出面，所述光管包括在输入和输出之间延伸的一对反射壁 并且沿着慢轴的方向彼此分离;以及扫描装置，用于在平行于快轴的扫描方向上扫描从均匀化光管发射的光，跨过晶片。

    Semiconductor substrate process using an optically writable carbon-containing mask
    7.
    发明申请
    Semiconductor substrate process using an optically writable carbon-containing mask 有权
    使用可光学写入的含碳掩模的半导体衬底工艺

    公开(公告)号：US20070032082A1

    公开(公告)日：2007-02-08

    申请号：US11199592

    申请日：2005-08-08

    申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    IPC分类号： H01L21/302

    CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

    摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

    摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。